Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFG198
NPN 8 GHz wideband transistor
Product specification
1995 Sep 12
NXP Semiconductors
Product specification
NPN 8 GHz wideband transistor
DESCRIPTION
BFG198
PINNING
NPN planar epitaxial transistor in a
plastic SOT223 envelope, intended
for wideband amplifier applications.
The device features a high gain and
excellent output voltage capabilities.
PIN
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
4
fpage
1
2
Top view
3
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter


20
V
VCEO
collector-emitter voltage
open base


10
V
IC
DC collector current


100
mA
Ptot
total power dissipation
up to Ts = 135 C (note 1)


1
W
hFE
DC current gain
IC = 50 mA; VCE = 5 V; Tj = 25 C
40
90

fT
transition frequency
IC = 50 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 C

8

GHz
GUM
maximum unilateral power
gain
IC = 50 mA; VCE = 8 V; f = 500 MHz;
Tamb = 25 C

18

dB
IC = 50 mA; VCE = 8 V; f = 800 MHz;
Tamb = 25 C

15

dB
dim = 60 dB; IC = 70 mA; VCE = 8 V;
RL = 75 ; Tamb = 25 C;
f(p+qr) = 793.25 MHz

700

mV
Vo
output voltage
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter

20
V
VCEO
collector-emitter voltage
open base

10
V
VEBO
emitter-base voltage
open collector

2.5
V
IC
DC collector current

100
mA
Ptot
total power dissipation
up to Ts = 135 C (note 1)

1
W
Tstg
storage temperature
65
+150
C
Tj
junction temperature

175
C
Note
1. Ts is the temperature at the soldering point of the collector tab.
1995 Sep 12
2
NXP Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
VALU
E
UNIT
40
K/W
MAX.
UNIT
up to Ts = 135 C (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
ICBO
collector cut-off current
IE = 0; VCB = 5 V


100
hFE
DC current gain
IC = 50 mA; VCE = 5 V
40
90

Cc
collector capacitance
IE = ie = 0; VCB = 8 V; f = 1 MHz

1.5

Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz

4

pF
Cre
feedback capacitance
IC = 0; VCE = 8 V; f = 1 MHz

0.8

pF
fT
transition frequency
IC = 50 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 C

8

GHz
GUM
maximum unilateral power
gain; note 1
IC = 50 mA; VCE = 8 V; f = 500 MHz;
Tamb = 25 C

18

dB
IC = 50 mA; VCE = 8 V; f = 800 MHz;
Tamb = 25 C

15

dB

750

mV
nA
pF
Vo
output voltage
note 2
note 3

700

mV
d2
second order
intermodulation distortion
note 4

55

dB
Notes
s 21 2
1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------dB.
 1 – s 11 2   1 – s 22 2 
2. dim = 60 dB (DIN 45004B); IC = 70 mA; VCE = 8 V; RL = 75 ; Tamb = 25 C;
Vp = Vo at dim = 60 dB;
Vq = Vo 6 dB; fp = 445.25 MHz;
Vr = Vo 6 dB; fq = 453.25 MHz; fr = 455.25 MHz
measured at f(p+qr) = 443.25 MHz.
3. dim = 60 dB (DIN 45004B); IC = 70 mA; VCE = 8 V; RL = 75 ; Tamb = 25 C;
Vp = Vo at dim = 60 dB; fp = 795.25 MHz;
Vq = Vo 6 dB; fq = 803.25 MHz;
Vr = Vo 6 dB; fr = 805.25 MHz;
measured at f(p+qr) = 793.25 MHz.
4. IC = 50 mA; VCE = 8 V; Vo = 50 dBmV;
f(p+q) = 810 MHz; fp = 250 MHz; fq = 560 MHz.
1995 Sep 12
3
NXP Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
;;;;
VCC = 8 V
handbook, full pagewidth
C5
L4
L3
VBB
C4
C3
L5
input
75 Ω
C1
L1
L6
C6
R2
R1
L2
output
75 Ω
DUT
C2
R3
R4
MBB754
Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit.
List of components (see test circuit)
DESIGNATION
DESCRIPTION
VALUE
UNIT
DIMENSIONS
CATALOGUE NO.
C2
multilayer ceramic capacitor
1.2
pF
2222 851 12128
C1, C4, C6, C7
multilayer ceramic capacitor
10
nF
2222 590 08627
C3
multilayer ceramic capacitor
10
nF
2222 851 12128
C5 (note 1)
multilayer ceramic capacitor
10
nF
2222 629 08103
C8
multilayer ceramic capacitor
1.5
pF
2222 851 12158
L1 (note 1)
1.5 turns 0.4 mm copper wire
L2
microstripline
75

length 22 mm;
width 2.5 mm
L3 (note 1)
0.4 mm copper wire
24
nH
length 30 mm
L4 (note 1)
0.4 mm copper wire
3.6
nH
length 4 mm
L5
microstripline
75

length 19 mm;
width 2.5 mm
L6
Ferroxcube choke
5
H
3122 108 20153
R1
metal film resistor
10

2322 180 73103
R2 (note 1)
metal film resistor
220

2322 180 73221
R3, R4
metal film resistor
30

2322 180 73309
int. dia. 3 mm;
winding pitch 1 mm
Note
1. Components C5, L1, L3, L4, and R2 are mounted on the underside of the PCB.
The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (r = 2.2);
thickness 116 inch; thickness of copper sheet 2 x 35 m; see Fig.2.
1995 Sep 12
4
NXP Semiconductors
Product specification
NPN 8 GHz wideband transistor
handbook, full pagewidth
BFG198
VBB
VCC
C4
C6
R1
L6
R3
C2
75 Ω
input
L1
L4
L2
C1
C3
C7
75 Ω
output
L5
C8
R4
C5
R2
L3
MEA968
80 mm
handbook, full pagewidth
60 mm
MEA966
80 mm
handbook, full pagewidth
60 mm
mounting
screws
M 2.5 (8x)
MEA967
Fig.3 Intermodulation distortion and second order intermodulation distortion printed-circuit board.
1995 Sep 12
5
NXP Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
MBB752
MBB267
1.2
160
handbook,
halfpage
P
handbook, halfpage
tot
(W)
h FE
1.0
0.8
120
0.6
0.4
80
0.2
40
0
0
50
100
150
200
( o C)
Ts
0
40
80
120
I C (mA)
VCE = 5 V; Tj = 25 C.
Fig.5
DC current gain as a function of collector
current.
Fig.4 Power derating curve.
MBB751
MBB499
10
1.2
handbook, halfpage
handbook, halfpage
fT
(GHz)
C re
8
(pF)
0.8
6
4
0.4
2
0
0
0
4
8
12
0
16
20
VCB (V)
IE = 0; f = 1 MHz; Tj = 25 C.
Fig.6
1995 Sep 12
40
80
I C (mA)
120
VCE = 8 V; f = 1 GHz; Tamb = 25 C.
Feedback capacitance as a function of
collector-base voltage.
Fig.7
6
Transition frequency as a function of
collector current.
NXP Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
MBB753
40
MBB498
45
handbook, halfpage
handbook, halfpage
d im
(dB)
G UM
(dB)
50
30
55
20
60
10
65
0
10
10
2
103
f (MHz)
10
70
20
4
40
60
80
100
120
I C (mA)
VCE = 8 V; Vo = 750 mV; Tamb = 25 C;
f(p+qr) = 443.25 MHz.
IC = 50 mA; VCE = 8 V; Tamb = 25 C;
Fig.9
Fig.8
Maximum gain as a function of frequency.
Intermodulation distortion as a function of
collector current.
MBB266
MBB497
45
35
handbook, halfpage
handbook, halfpage
d im
d2
(dB)
(dB)
50
40
55
45
60
50
65
55
70
20
40
60
80
60
20
100
120
I C (mA)
VCE = 8 V; Vo = 700 mV; Tamb = 25 C;
f(p+q) = 793.25 MHz.
60
80
100
120
I C (mA)
VCE = 8 V; Vo = 50 dBmV; Tamb = 25 C
f(p+q) = 450 MHz.
Fig.10 Intermodulation distortion as a function of
collector current.
1995 Sep 12
40
Fig.11 Second order intermodulation distortion as
a function of collector current.
7
NXP Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
MBB268
35
handbook, halfpage
d2
(dB)
40
45
50
55
60
20
40
60
80
100
120
I C (mA)
VCE = 8 V; Vo = 50 dBmV; Tamb = 25 C
f(p+q) = 810 MHz.
Fig.12 Second order intermodulation distortion as
a function of collector current.
1995 Sep 12
8
NXP Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
50
handbook, full pagewidth
25
100
2 GHz
10
250
+j
10
0
25
50
100
∞
250
–j
40 MHz
250
10
100
25
MBB494
50
IC = 50 mA; VCE = 8 V; Tamb = 25 C; Zo = 50 .
Fig.13 Common emitter input reflection coefficient (S11).
90 o
handbook, full pagewidth
60 o
120 o
150 o
30 o
40 MHz
ϕ
180 o
100
80
60
40
20
0o
2 GHz
ϕ
30 o
150 o
60 o
120 o
90 o
MBB496
IC = 50 mA; VCE = 8 V; Tamb = 25 C.
Fig.14 Common emitter forward transmission coefficient (S21).
1995 Sep 12
9
NXP Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
90 o
handbook, full pagewidth
2 GHz
60 o
120 o
150 o
30 o
ϕ
0.2 0.16
180 o
0.12
0.08
0.04
0o
40 MHz
ϕ
30 o
150 o
60 o
120 o
90 o
MBB495
IC = 50 mA; VCE = 8 V; Tamb = 25 C.
Fig.15 Common emitter reverse transmission coefficient (S12).
50
handbook, full pagewidth
25
100
10
250
2 GHz
+j
0
10
25
50
100
250
∞
–j
250
40 MHz
10
100
25
50
MBB493
IC = 50 mA; VCE = 8 V; Tamb = 25 C; Zo = 50 .
Fig.16 Common emitter output reflection coefficient (S22).
1995 Sep 12
10
NXP Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
PACKAGE OUTLINE
Plastic surface-mounted package with increased heatsink; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
3
Lp
bp
e1
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
SOT223
1995 Sep 12
REFERENCES
IEC
JEDEC
JEITA
SC-73
11
EUROPEAN
PROJECTION
ISSUE DATE
04-11-10
06-03-16
NXP Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
Right to make changes  NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
DEFINITIONS
Product specification  The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
Suitability for use  NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
DISCLAIMERS
Limited warranty and liability  Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
Applications  Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
1995 Sep 12
12
NXP Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
Export control  This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Quick reference data  The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products  Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.
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Semiconductors products are sold subject to the general
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http://www.nxp.com/profile/terms, unless otherwise
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Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
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may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
1995 Sep 12
13
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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For additional information please visit: http://www.nxp.com
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© NXP B.V. 2010
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Printed in The Netherlands
R77/03/pp14
Date of release: 1995 Sep 12