DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFG21W UHF power transistor Product specification Supersedes data of 1997 Nov 21 1998 Jul 06 NXP Semiconductors Product specification UHF power transistor BFG21W FEATURES PINNING High power gain PIN High efficiency 1, 3 DESCRIPTION emitter 1.9 GHz operating area 2 base Linear and non-linear operation. 4 collector APPLICATIONS Common emitter class-AB output stage in hand held radio equipment at 1.9 GHz such as DECT, PHS, etc. handbook, halfpage 3 4 2 1 Driver for DCS1800, 1900. DESCRIPTION NPN double polysilicon bipolar power transistor with buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package. Top view MSB842 Marking code: P1. Fig.1 Simplified outline SOT343R. QUICK REFERENCE DATA RF performance at Ts 60 C in a common emitter test circuit. MODE OF OPERATION Pulsed class-AB; < 1 : 2; tp = 5 ms 1998 Jul 06 f (GHz) VCE (V) PL (dBm) Gp (dB) C (%) 1.9 3.6 26 10 typ.55 2 NXP Semiconductors Product specification UHF power transistor BFG21W LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 15 V VCEO collector-emitter voltage open base 4.5 V VEBO emitter-base voltage open collector IC collector current (DC) Ptot total power dissipation Tstg Tj 1 V 500 mA 600 mW storage temperature 65 +150 C operating junction temperature 150 C Ts 60 C; note 1 Note 1. Ts is the temperature at the soldering point of the emitter pins. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point Ts 60 C; Ptot = 600 mW; note 1 VALUE UNIT 150 K/W Note 1. Ts is the temperature at the soldering point of the emitter pins. MGM219 103 handbook, full pagewidth Rth (K/W) 102 δ= 1 0.75 0.5 0.33 0.2 0.1 10 0.05 δ= P tp T 0.02 0.01 0 t tp T 1 10−6 10−5 10−4 10−3 10−2 10−1 At temperature stabilization solder point has been reached. Fig.2 Transient thermal resistance as a function of pulse time; typical values. 1998 Jul 06 3 tp (s) 1 NXP Semiconductors Product specification UHF power transistor BFG21W CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 0.1 mA 15 V V(BR)CEO collector-emitter breakdown voltage open base; IC = 10 mA 4.5 V V(BR)CER collector-emitter breakdown voltage RBE < 1 k, IC = 10 mA 10 V V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.1 mA 1 V ICES collector leakage current VCE = 5 V; VBE = 0 10 A hFE DC current gain IC = 200 mA; VCE = 2 V 40 100 Cc collector capacitance IE = ie= 0; VCB = 3 V; f = 1 MHz 3 pF Cre feedback capacitance IC = 0; VCB = 3.6 V; f = 1 MHz 1.5 pF fT transition frequency IC = 200 mA; VCE = 3.6 V; f = 700 MHz 18 GHz APPLICATION INFORMATION RF performance at Ts 60 C in a common emitter test circuit (see Figs 4 and 5). MODE OF OPERATION f (GHz) VCE (V) ICQ (mA) PL (dBm) Gp (dB) C (%) Pulsed; class-AB; < 1 : 2; tp = 5 ms 1.9 3.6 1 26 10 typ. 55 Ruggedness in class-AB operation The transistor is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases at 26 dBm output power under pulsed conditions: = 1 : 2; tp = 5 ms; f = 1.9 GHz at VCE = 4.5 V. MGM220 16 handbook, halfpage (dB) 80 ηC (%) Gp Gp 12 60 8 40 ηC 4 20 0 5 10 15 20 0 25 30 PL (dBm) Pulsed, class-AB operation; < 1 : 2; tp = 5 ms. f = 1.9 GHz; VCE = 3.6 V; ICQ = 1 mA; tuned at PL = 26 dBm. Fig.3 1998 Jul 06 4 Power gain and collector efficiency as a function of the load power; typical values. NXP Semiconductors Product specification UHF power transistor handbook, full pagewidth BFG21W VC VS R1 L5 R2 C7 R3 C6 TR1 C3 L4 L1 RF input 50 Ω L3 C5 L2 C1 RF output 50 Ω DUT C4 C2 MGM221 Fig.4 Common emitter test circuit for class-AB operation at 1.9 GHz. List of components used in test circuit (see Figs 4 and 5) COMPONENT C1, C5 DESCRIPTION VALUE multilayer ceramic chip capacitor; note 1 DIMENSIONS CATALOGUE No. 24 pF C2 multilayer ceramic chip capacitor; note 1 3.3 pF C3, C6 multilayer ceramic chip capacitor, note 1 15 pF C4 multilayer ceramic chip capacitor; note 1 2.4 pF C7 multilayer ceramic chip capacitor; note 1 1 nF L1, L4 stripline; note 2 100 18 0.2 mm L2 stripline; note 2 50 3.2 0.8 mm L3 stripline; note 2 50 4.6 0.8 mm L5 Grade 4S2 Ferroxcube chip bead R1 metal film resistor R2, R3 metal film resistor 10 ; 0.4 W TR1 NPN transistor BC817 4330 030 36300 220 ; 0.4 W 9335 895 20215 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric (r = 6.15, tan = 0.0019); thickness 0.64 mm, copper cladding = 35 m. 1998 Jul 06 5 NXP Semiconductors Product specification UHF power transistor BFG21W 45 handbook, full pagewidth 35 VS VC R1 TR1 L5 R2 R3 C3 C7 C6 L1 L4 C2 C1 C5 L2 L3 input DUT C4 output MGM222 Dimensions in mm. The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.5 Printed-circuit board and component lay-out for 1.9 GHz class-AB test-circuit in Fig.4. 1998 Jul 06 6 NXP Semiconductors Product specification UHF power transistor BFG21W MGM223 MGM224 16 L (Ω) 12 10 Zi handbook, Z halfpage handbook, halfpage (Ω) ri 8 RL 8 6 4 xi 4 0 2 0 1.8 1.85 1.9 1.95 f (GHz) −8 1.8 2.0 Input impedance as function of frequency (series components); typical values. 1998 Jul 06 1.85 1.9 1.95 f (GHz) 2.0 VCE = 3.6 V; ICQ = 1 mA; PL = 26 dBm; Ts 60 C. VCE = 3.6 V; ICQ = 1 mA; PL = 26 dBm; Ts 60 C. Fig.6 XL −4 Fig.7 7 Load impedance as a function of frequency (series components); typical values. NXP Semiconductors Product specification UHF power transistor BFG21W PACKAGE OUTLINE Plastic surface-mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 c 2 w M B 1 bp Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.4 0.3 0.7 0.5 0.25 0.10 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-05-21 06-03-16 SOT343R 1998 Jul 06 EUROPEAN PROJECTION 8 NXP Semiconductors Product specification UHF power transistor BFG21W DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. DEFINITIONS Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. DISCLAIMERS Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 1998 Jul 06 9 NXP Semiconductors Product specification UHF power transistor BFG21W Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 1998 Jul 06 10 NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2010 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/03/pp11 Date of release: 1998 Jul 06