Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D124
BFG21W
UHF power transistor
Product specification
Supersedes data of 1997 Nov 21
1998 Jul 06
NXP Semiconductors
Product specification
UHF power transistor
BFG21W
FEATURES
PINNING
 High power gain
PIN
 High efficiency
1, 3
DESCRIPTION
emitter
 1.9 GHz operating area
2
base
 Linear and non-linear operation.
4
collector
APPLICATIONS
 Common emitter class-AB output stage in hand held
radio equipment at 1.9 GHz such as DECT, PHS, etc.
handbook, halfpage
3
4
2
1
 Driver for DCS1800, 1900.
DESCRIPTION
NPN double polysilicon bipolar power transistor with
buried layer for low voltage medium power applications
encapsulated in a plastic, 4-pin dual-emitter SOT343R
package.
Top view
MSB842
Marking code: P1.
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA
RF performance at Ts  60 C in a common emitter test circuit.
MODE OF OPERATION
Pulsed class-AB;  < 1 : 2; tp = 5 ms
1998 Jul 06
f
(GHz)
VCE
(V)
PL
(dBm)
Gp
(dB)
C
(%)
1.9
3.6
26
10
typ.55
2
NXP Semiconductors
Product specification
UHF power transistor
BFG21W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter

15
V
VCEO
collector-emitter voltage
open base

4.5
V
VEBO
emitter-base voltage
open collector
IC
collector current (DC)
Ptot
total power dissipation
Tstg
Tj

1
V

500
mA

600
mW
storage temperature
65
+150
C
operating junction temperature

150
C
Ts  60 C; note 1
Note
1. Ts is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to
soldering point
Ts  60 C; Ptot = 600 mW; note 1
VALUE
UNIT
150
K/W
Note
1. Ts is the temperature at the soldering point of the emitter pins.
MGM219
103
handbook, full pagewidth
Rth
(K/W)
102
δ=
1
0.75
0.5
0.33
0.2
0.1
10
0.05
δ=
P
tp
T
0.02
0.01
0
t
tp
T
1
10−6
10−5
10−4
10−3
10−2
10−1
At temperature stabilization solder point has been reached.
Fig.2 Transient thermal resistance as a function of pulse time; typical values.
1998 Jul 06
3
tp (s)
1
NXP Semiconductors
Product specification
UHF power transistor
BFG21W
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter; IC = 0.1 mA
15

V
V(BR)CEO
collector-emitter breakdown voltage
open base; IC = 10 mA
4.5

V
V(BR)CER
collector-emitter breakdown voltage
RBE < 1 k, IC = 10 mA
10

V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 0.1 mA
1

V
ICES
collector leakage current
VCE = 5 V; VBE = 0

10
A
hFE
DC current gain
IC = 200 mA; VCE = 2 V
40
100
Cc
collector capacitance
IE = ie= 0; VCB = 3 V; f = 1 MHz

3
pF
Cre
feedback capacitance
IC = 0; VCB = 3.6 V; f = 1 MHz

1.5
pF
fT
transition frequency
IC = 200 mA; VCE = 3.6 V;
f = 700 MHz
18

GHz
APPLICATION INFORMATION
RF performance at Ts  60 C in a common emitter test circuit (see Figs 4 and 5).
MODE OF OPERATION
f
(GHz)
VCE
(V)
ICQ
(mA)
PL
(dBm)
Gp
(dB)
C
(%)
Pulsed; class-AB;  < 1 : 2; tp = 5 ms
1.9
3.6
1
26
10
typ. 55
Ruggedness in class-AB operation
The transistor is capable of withstanding a load mismatch
corresponding to VSWR = 6 : 1 through all phases at
26 dBm output power under pulsed conditions:  = 1 : 2;
tp = 5 ms; f = 1.9 GHz at VCE = 4.5 V.
MGM220
16
handbook, halfpage
(dB)
80
ηC
(%)
Gp
Gp
12
60
8
40
ηC
4
20
0
5
10
15
20
0
25
30
PL (dBm)
Pulsed, class-AB operation;  < 1 : 2; tp = 5 ms.
f = 1.9 GHz; VCE = 3.6 V; ICQ = 1 mA; tuned at PL = 26 dBm.
Fig.3
1998 Jul 06
4
Power gain and collector efficiency as a
function of the load power; typical values.
NXP Semiconductors
Product specification
UHF power transistor
handbook, full pagewidth
BFG21W
VC
VS
R1
L5
R2
C7
R3
C6
TR1
C3
L4
L1
RF input
50 Ω
L3
C5
L2
C1
RF output
50 Ω
DUT
C4
C2
MGM221
Fig.4 Common emitter test circuit for class-AB operation at 1.9 GHz.
List of components used in test circuit (see Figs 4 and 5)
COMPONENT
C1, C5
DESCRIPTION
VALUE
multilayer ceramic chip capacitor; note 1
DIMENSIONS
CATALOGUE No.
24 pF
C2
multilayer ceramic chip capacitor; note 1
3.3 pF
C3, C6
multilayer ceramic chip capacitor, note 1
15 pF
C4
multilayer ceramic chip capacitor; note 1
2.4 pF
C7
multilayer ceramic chip capacitor; note 1
1 nF
L1, L4
stripline; note 2
100 
18  0.2 mm
L2
stripline; note 2
50 
3.2  0.8 mm
L3
stripline; note 2
50 
4.6  0.8 mm
L5
Grade 4S2 Ferroxcube chip bead
R1
metal film resistor
R2, R3
metal film resistor
10 ; 0.4 W
TR1
NPN transistor
BC817
4330 030 36300
220 ; 0.4 W
9335 895 20215
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric (r = 6.15,
tan  = 0.0019); thickness 0.64 mm, copper cladding = 35 m.
1998 Jul 06
5
NXP Semiconductors
Product specification
UHF power transistor
BFG21W
45
handbook, full pagewidth
35
VS
VC
R1
TR1
L5
R2
R3
C3
C7
C6
L1
L4
C2
C1
C5
L2
L3
input
DUT
C4
output
MGM222
Dimensions in mm.
The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.5 Printed-circuit board and component lay-out for 1.9 GHz class-AB test-circuit in Fig.4.
1998 Jul 06
6
NXP Semiconductors
Product specification
UHF power transistor
BFG21W
MGM223
MGM224
16
L
(Ω)
12
10
Zi
handbook,
Z halfpage
handbook, halfpage
(Ω)
ri
8
RL
8
6
4
xi
4
0
2
0
1.8
1.85
1.9
1.95
f (GHz)
−8
1.8
2.0
Input impedance as function of frequency
(series components); typical values.
1998 Jul 06
1.85
1.9
1.95
f (GHz)
2.0
VCE = 3.6 V; ICQ = 1 mA; PL = 26 dBm; Ts  60 C.
VCE = 3.6 V; ICQ = 1 mA; PL = 26 dBm; Ts  60 C.
Fig.6
XL
−4
Fig.7
7
Load impedance as a function of frequency
(series components); typical values.
NXP Semiconductors
Product specification
UHF power transistor
BFG21W
PACKAGE OUTLINE
Plastic surface-mounted package; reverse pinning; 4 leads
D
SOT343R
E
B
A
X
HE
y
v M A
e
3
4
Q
A
A1
c
2
w M B
1
bp
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-05-21
06-03-16
SOT343R
1998 Jul 06
EUROPEAN
PROJECTION
8
NXP Semiconductors
Product specification
UHF power transistor
BFG21W
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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reserves the right to make changes to information
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specifications and product descriptions, at any time and
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information supplied prior to the publication hereof.
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1998 Jul 06
9
NXP Semiconductors
Product specification
UHF power transistor
BFG21W
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values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
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(proper) operation of the device at these or any other
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operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
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1998 Jul 06
10
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Printed in The Netherlands
R77/03/pp11
Date of release: 1998 Jul 06
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