Data Sheet

BFG25A/X
NPN 5 GHz wideband transistor
Rev. 04 — 27 November 2007
Product data sheet
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NXP Semiconductors
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
FEATURES
DESCRIPTION
• Low current consumption
(100 µA to 1 mA)
• Low noise figure
NPN silicon wideband transistor in a
four-lead dual emitter SOT143B
plastic package (cross emitter).
• Gold metallization ensures
excellent reliability.
PINNING
PIN
APPLICATIONS
• RF low power amplifiers, such as
pocket telephones, paging
systems, with signal frequencies
up to 2 GHz.
handbook, 2 columns
4
1
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
3
2
Top view
MSB014
Marking code: %MU.
Fig.1 SOT143B.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
−
−
8
V
VCEO
collector-emitter voltage
−
−
5
V
IC
collector current (DC)
−
−
6.5
mA
Ptot
total power dissipation
Ts ≤ 165 °C
−
−
32
mW
hFE
DC current gain
IC = 0.5 mA; VCE = 1 V
50
80
200
fT
transition frequency
IC = 1 mA; VCE = 1 V;
f = 500 MHz; Tamb = 25 °C
3.5
5
−
GHz
GUM
maximum unilateral power gain
IC = 0.5 mA; VCE = 1 V;
f = 1 GHz; Tamb = 25 °C
−
18
−
dB
F
noise figure
IC = 0.5 mA; VCE = 1 V;
f = 1 GHz; Γ = Γopt; Tamb = 25 °C
−
1.8
−
dB
IC = 1 mA; VCE = 1 V; f = 1 GHz;
Γ = Γopt; Tamb = 25 °C
−
2
−
dB
Rev. 04 - 27 November 2007
2 of 12
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
8
V
VCEO
collector-emitter voltage
open base
−
5
V
VEBO
emitter-base voltage
open collector
−
2
V
IC
collector current (DC)
−
6.5
mA
Ptot
total power dissipation
Ts ≤ 165 °C; note 1
−
32
mW
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
175
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point note 1
VALUE
UNIT
320
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector leakage current
IE = 0; VCB = 5 V
−
−
50
hFE
DC current gain
IC = 0.5 mA; VCE = 1 V
50
80
200
Cre
feedback capacitance
IC = ic = 0; VCB = 1 V; f = 1 MHz
−
0.21
0.3
pF
fT
transition frequency
IC = 1 mA; VCE = 1 V;
Tamb = 25 °C; f = 500 MHz
3.5
5
−
GHz
GUM
maximum unilateral power gain
(note 1)
IC = 0.5 mA; VCE = 1 V;
f = 1 GHz; Tamb = 25 °C
−
18
−
dB
F
noise figure
IC = 0.5 mA; VCE = 1 V; f = 1 GHz;
Γ = Γopt; Tamb = 25 °C
−
1.8
−
dB
IC = 1 mA; VCE = 1 V; f = 1 GHz;
Γ = Γopt; Tamb = 25 °C
−
2
−
dB
Note
µA
2
S 21
1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ------------------------------------------------------------- dB
2 
2

1
1
–
S
–
S

11  
22 
Rev. 04 - 27 November 2007
3 of 12
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
MRC038 - 1
handbook,40
halfpage
BFG25A/X
MCD138
100
handbook, halfpage
h FE
P tot
(mW)
80
30
60
20
40
10
20
0
10 3
0
0
50
100
150
Ts (oC)
200
10 2
10 1
1
I C (mA)
10
VCE = 1 V.
Fig.3
Fig.2 Power derating curve.
MCD139
handbook,0.3
halfpage
DC current gain as a function of collector
current; typical values.
MCD140
6
handbook, halfpage
fT
(GHz)
C re
(pF)
0.2
4
0.1
2
0
0
0
2
4
VCB (V)
6
1
2
3
I C (mA)
4
VCE = 1 V; f = 500 MHz; Tamb = 25 °C.
IC = ic = 0; f = 1 MHz.
Fig.4
0
Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5
Rev. 04 - 27 November 2007
Transition frequency as a function of
collector current; typical values.
4 of 12
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
MCD141
30
handbook, halfpage
MCD142
handbook,20
halfpage
gain
G UM
gain
BFG25A/X
G UM
(dB)
(dB)
15
20
MSG
MSG
10
10
5
0
0
0.5
0
1.0
1.5
2.0
2.5
I C (mA)
VCE = 1 V; f = 500 MHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
Fig.6
0
0.5
1.0
1.5
2.0
2.5
I C (mA)
VCE = 1 V; f = 1 GHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
Gain as a function of collector current;
typical values.
MCD143
handbook,50
halfpage
gain
Fig.7
Gain as a function of collector current;
typical values.
MCD144
handbook,50
halfpage
gain
(dB)
(dB)
40
40
G UM
30
30
20
20
G UM
MSG
MSG
10
10
0
10
10 2
10 3
f (MHz)
10 4
IC = 0.5 mA; VCE = 1 V.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
Fig.8
0
10
10
2
10
3
f (MHz)
10
4
IC = 1 mA; VCE = 1 V.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
Gain as a function of frequency;
typical values.
Fig.9
Rev. 04 - 27 November 2007
Gain as a function of frequency;
typical values.
5 of 12
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
MCD145
4
MCD146
4
handbook, halfpage
handbook, halfpage
F
(dB)
F
(dB)
f = 2 GHz
3
IC = 2 mA
3
1 GHz
1 mA
500 MHz
2
2
1
1
0
10−1
1
IC (mA)
0.5 mA
0
102
10
VCE = 1 V.
103
f (MHz)
104
VCE = 1 V.
Fig.10 Minimum noise figure as a function of
collector current; typical values.
Fig.11 Minimum noise figure as a function of
frequency; typical values.
1
handbook, full pagewidth
0.5
2
6 dB
n
unstable regio
0.2
4 dB
2.5 dB
+
j
0
0.2
0.5
1
2
5
10
10
*
∞
MSG
15.6 dB
–j
0.2
stability
circle
5
OPT
F
= 1.9 dB
min
10
5
14 dB
12 dB
2
0.5
1
MCD147
IC = 1 mA; VCE = 1 V; f = 500 MHz; ZO = 50 Ω; Maximum stable gain = 15.6 dB; Fmin = 1.9 dB; Γopt = 0.85, 5°; Rn/50 = 2.4.
Fig.12 Common emitter noise figure circles; typical values.
Rev. 04 - 27 November 2007
6 of 12
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
1
handbook, full pagewidth
0.5
2
stability
circle
6 dB
0.2
n
egio
ble r
a
unst
4 dB
OPT
F min = 2 dB
5
3 dB
+
j
10
*
0
0.2
0.5
1
MSG
12.4 dB
–j
2
5
10
∞
10
11 dB
5
0.2
9 dB
2
0.5
1
MCD148
IC = 1 mA; VCE = 1 V; f = 1000 MHz; ZO = 50 Ω; Maximum stable gain = 12.4 dB; Fmin = 2 dB; Γopt = 0.78, 14°; Rn/50 = 2.6.
Fig.13 Common emitter noise figure circles; typical values.
1
stability
circle
handbook, full pagewidth
0.5
2
ion
eg
er
bl
sta
6 dB
un
OPT
F
= 2.4 dB
min
4 dB
0.2
3 dB
*
5
10
+j
0
0.2 MSG 0.5
9 dB
1
2
5
10
∞
–j
10
7.5 dB
0.2
5
6 dB
2
0.5
1
MCD149
IC = 1 mA; VCE = 1 V; f = 2000 MHz; ZO = 50 Ω; Maximum stable gain = 8.9 dB; Fmin = 2.4 dB; Γopt = 0.72, 38°; Rn/50 = 1.9.
Fig.14 Common emitter noise figure circles; typical values.
Rev. 04 - 27 November 2007
7 of 12
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
1
handbook, full pagewidth
0.5
2
0.2
5
10
+j
0.2
0
0.5
1
2
5
10
∞
40 MHz
–j
10
3 GHz
5
0.2
2
0.5
MCD150
1
IC = 1 mA; VCE = 1 V; Zo = 50 Ω.
Fig.15 Common emitter input reflection coefficient (S11); typical values.
90 o
handbook, full pagewidth
45 o
135 o
3 GHz
180 o
40 MHz
_
IC = 1 mA; VCE = 1 V.
1
2
3
4
5
0o
_ 45 o
135 o
_ 90 o
MCD151
Fig.16 Common emitter forward transmission coefficient (S21); typical values.
Rev. 04 - 27 November 2007
8 of 12
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
90 o
handbook, full pagewidth
45 o
135 o
3 GHz
180 o
0.5
0.4
0.3
0.2
0.1
0o
40 MHz
_ 45 o
_ 135 o
_ 90 o
IC = 1 mA; VCE = 1 V.
MCD153
Fig.17 Common emitter reverse transmission coefficient (S12); typical values.
1
handbook, full pagewidth
0.5
2
0.2
5
10
+j
0
0.2
0.5
1
2
5
10
∞
40 MHz
–j
10
5
0.2
3 GHz
2
0.5
1
MCD152
IC = 1 mA; VCE = 1 V; Zo = 50 Ω.
Fig.18 Common emitter output reflection coefficient (S22); typical values.
Rev. 04 - 27 November 2007
9 of 12
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
HE
v M A
e
bp
w M B
4
3
Q
A
A1
c
1
2
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
SOT143B
Rev. 04 - 27 November 2007
10 of 12
BFG25A/X
NXP Semiconductors
NPN 5 GHz wideband transistor
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
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Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
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Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
Rev. 04 - 27 November 2007
11 of 12
BFG25A/X
NXP Semiconductors
NPN 5 GHz wideband transistor
Revision history
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BFG25AX_N_4
20071127
Product data sheet
-
BFG25AX_3
Modifications:
•
Fig. 1 on page 2; Figure note changed
BFG25AX_3
(9397 750 02767)
19971029
Product specification
-
BFG25AX_2
BFG25AX_2
19950901
Product specification
-
BFG25AX_1
BFG25AX_1
19921101
Product specification
-
-
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 27 November 2007
Document identifier: BFG25AX_N_4
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