Data Sheet

DATA SHEET
dbook, halfpage
M3D123
BFG25AW; BFG25AW/X
NPN 5 GHz wideband transistors
Product specification
Supersedes data of August 1995
1998 Sep 23
NXP Semiconductors
Product specification
BFG25AW;
BFG25AW/X
NPN 5 GHz wideband transistors
FEATURES
PINNING
 Low current consumption
(100 A to 1 mA)
 Low noise figure
 Gold metallization ensures
excellent reliability.
APPLICATIONS
Wideband applications in UHF low
power amplifiers, such as pocket
telephones and paging systems.
DESCRIPTION
PIN
DESCRIPTION
lfpage
4
3
1
2
BFG25AW
1
collector
2
base
3
emitter
4
emitter
Top view
MBK523
BFG25AW/X
1
collector
2
emitter
3
base
4
emitter
Fig.1 SOT343N.
MARKING
TYPE NUMBER
NPN silicon planar epitaxial transistor
in a 4-pin dual-emitter SOT343N
plastic package.
CODE
BFG25AW
N6
BFG25AW/X
V1
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
VCBO
collector-base voltage
open emitter


8
V
VCEO
collector-emitter voltage
open base


5
V
IC
collector current (DC)


6.5
mA
Ptot
total power dissipation
Ts  85 C


500
mW
hFE
DC current gain
IC = 0.5 mA; VCE = 1 V
50
80
200
Cre
feedback capacitance
IC = 0; VCE = 1 V; f = 1 MHz

0.2
0.3
pF
fT
transition frequency
IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 C 3.5
5

GHz
GUM
maximum unilateral
power gain
IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 C

16

dB
F
noise figure
s  opt; IC = 1 mA; VCE = 1 V; f = 1 GHz

2

dB
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter

8
V
VCEO
collector-emitter voltage
open base

5
V
VEBO
emitter-base voltage
open collector

2
V
IC
collector current (DC)

6.5
mA
Ptot
total power dissipation

500
mW
Tstg
storage temperature
65
+150
C
Tj
junction temperature

175
C
Ts  85 C; see Fig.2; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
1998 Sep 23
2
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
VALUE
UNIT
180
K/W
thermal resistance from junction to soldering point Ts  85 C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)CBO
collector-base breakdown voltage
CONDITIONS
IC = 100 A; IE = 0
MIN.
TYP.
MAX.
UNIT


8
V
V(BR)CEO
collector-emitter breakdown voltage IC = 1 mA; IB = 0


5
V
V(BR)EBO
emitter-base breakdown voltage
IE = 100 A; IC = 0


2
V
ICBO
collector leakage current
open emitter; VCB = 5 V; IE = 0


50
nA
hFE
DC current gain
IC = 0.5 mA; VCE = 1 V
50
80
200
Cre
feedback capacitance
IC = 0; VCE = 1 V; f = 1 MHz

0.2
0.3
pF
fT
transition frequency
IC = 1 mA; VCE = 1 V; f = 1 GHz;
Tamb = 25 C
3.5
5

GHz
GUM
maximum unilateral power gain;
note 1
IC = 0.5 mA; VCE = 1 V;
f = 1 GHz; Tamb = 25 C

16

dB
IC = 0.5 mA; VCE = 1 V;
f = 2 GHz; Tamb = 25 C

8

dB
s  opt; IC = 0.5 mA; VCE = 1 V;
f = 1 GHz

1.9

dB
s  opt; IC = 1 mA; VCE = 1 V;
f = 1 GHz

2
F
noise figure
Note
dB
S 21 2
dB.
1. GUM is the maximum unilateral power gain, assuming S12 is zero. G UM = 10 log --------------------------------------------------------- 1 – S 11 2   1 – S 22 2 
1998 Sep 23
3
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
MBG248
600
MCD138
100
handbook, halfpage
handbook, halfpage
h FE
P tot
80
(mW)
400
60
40
200
20
0
0
50
100
150
o
0
10 3
200
T s ( C)
10 2
10 1
1
I C (mA)
10
VCE = 1 V.
Fig.3
DC current gain as a function of collector
current; typical values.
Fig.2 Power derating curve.
MLB971
0.3
MLB972
6
handbook, halfpage
handbook, halfpage
Cre
fT
(GHz)
(pF)
0.2
4
0.1
2
0
0
0
2
4
VCE (V)
0
6
1998 Sep 23
2
3 I (mA) 4
C
f = 500 MHz; VCE = 1 V; Tamb = 25 C.
IC = 0; f = 1 MHz.
Fig.4
1
Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5
4
Transition frequency as a function of
collector current; typical values.
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
MLB973
30
MLB974
30
handbook, halfpage
handbook, halfpage
gain
gain
(dB)
(dB)
G UM
20
20
MSG
G UM
MSG
10
10
0
0
1
0
2
0
3
1
2
I C (mA)
f = 500 MHz; VCE = 1 V.
Fig.6
3
I C (mA)
f = 1 GHz; VCE = 1 V.
Gain as a function of collector current;
typical values.
Fig.7
MLB975
50
Gain as a function of collector current;
typical values.
MLB976
50
handbook, halfpage
handbook, halfpage
gain
gain
(dB)
(dB)
40
40
G UM
30
G UM
30
MSG
MSG
20
20
10
10
0
0
102
10
103
f (MHz)
104
IC = 0.5 mA; VCE = 1 V.
Fig.8
1998 Sep 23
102
10
103
f (MHz)
104
IC = 1 mA; VCE = 1 V.
Gain as a function of frequency;
typical values.
Fig.9
5
Gain as a function of frequency;
typical values.
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
MCD145
4
MCD146
4
handbook, halfpage
handbook, halfpage
F
(dB)
F
(dB)
f = 2 GHz
3
IC = 2 mA
3
1 GHz
1 mA
500 MHz
2
2
1
1
0
10−1
1
0
102
10
IC (mA)
0.5 mA
VCE = 1 V.
103
f (MHz)
VCE = 1 V.
Fig.10 Minimum noise figure as a function
of collector current; typical values.
Fig.11 Minimum noise figure as a function of
frequency; typical values.
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
0.2
F min = 1.9 dB
180 o
0.2
0
0.5
1
2
5
Γ opt
0o
0
F = 3 dB
F = 4 dB
F = 5 dB
0.2
0.5
5
2
135 o
45 o
1
MLB977
90 o
f = 500 MHz; VCE = 1 V; IC = 1 mA; Zo = 50 
Fig.12 Common emitter noise figure circles; typical values.
1998 Sep 23
104
6
1.0
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
stability
circle
0.2
0.4
5
F min = 2.0 dB
180 o
0.2
0
0.5
1
2
5
0.6
0.2
Γ opt
0o
F = 3 dB
0
F = 4 dB
F = 5 dB
5
0.2
0.5
2
135 o
45 o
1
MLB978
1.0
90 o
f = 1 GHz; VCE = 1 V; IC = 1 mA; Zo = 50 
Fig.13 Common emitter noise figure circles; typical values.
90 o
handbook, full pagewidth
1
135 o
stability
circle
1.0
45 o
0.8
2
F = 5 dB
F = 4 dB
F = 3 dB
Γ opt
0.5
0.6
F min = 2.4 dB
0.2
0.4
5
unstable
region
180 o
0.2
0.2
0
0.5
1
2
5
0o
0
5
0.2
0.5
2
135 o
45 o
1
MLB979
90 o
f = 2 GHz; VCE = 1 V; IC = 1 mA; Zo = 50 
Fig.14 Common emitter noise figure circles; typical values.
1998 Sep 23
7
1.0
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
0.2
180 o
0.2
0
0.5
1
2
5
0o
0
40 MHz
3 GHz
0.2
5
0.5
2
135 o
45 o
1
MLB980
1.0
90 o
VCE = 1 V; IC = 1 mA; Zo = 50 .
Fig.15 Common emitter input reflection coefficient (S11); typical values.
90 o
handbook, full pagewidth
135 o
45 o
3 GHz
180 o
40 MHz
5
4
3
2
0o
1
135 o
45 o
90 o
MLB981
VCE = 1 V; IC = 1 mA.
Fig.16 Common emitter forward transmission coefficient (S21); typical values.
1998 Sep 23
8
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
90 o
handbook, full pagewidth
135 o
45 o
3 GHz
180 o
0.5
0.4
0.3
0.2
0.1
40 MHz
0o
135 o
45 o
90 o
MLB982
VCE = 1 V; IC = 1 mA.
Fig.17 Common emitter reverse transmission coefficient (S12); typical values.
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
0.2
180 o
0.2
0
0.5
1
2
5
0o
0
40 MHz
5
0.2
3 GHz
0.5
2
135 o
45 o
1
MLB983
1.0
90 o
VCE = 1 V; IC = 1 mA; Zo = 50 
Fig.18 Common emitter output reflection coefficient (S22); typical values.
1998 Sep 23
9
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
SPICE parameters for the BFG25W crystal
SEQUENCE No.
PARAMETER
VALUE
UNIT
SEQUENCE No.
PARAMETER
VALUE
UNIT
1
IS
13.77
aA
36(1)
VJS
750.0
mV
2
BF
85.65

37(1)
MJS
0.000

3
NF
0.980

38
FC
0.988

4
VAF
50.80
V
Note
5
IKF
10.00
A
6
ISE
2.199
fA
1. These parameters have not been extracted, the
default values are shown.
7
NE
1.857

8
BR
16.97

9
NR
0.986

C cb
handbook, halfpage
10
VAR
2.491
V
11
IKR
188.0
mA
12
ISC
205.1
aA
13
NC
1.107

14
RB
80.00

15
IRB
1.000
A
16
RBM
80.00

17
RE
7.911

18
RC
5.300

19(1)
XTB
0.000

20(1)
EG
1.110
eV
21(1)
XTI
3.000

22
CJE
223.0
fF
23
VJE
669.7
mV
24
MJE
0.060

25
TF
5.112
ps
26
XTF
7.909

27
VTF
1.338
V
28
ITF
5.662
mA
Cbe
70
fF
29
PTF
15.37
deg
Ccb
50
fF
115
fF
0.34
nH
L1
LB
B
L2
B'
C be
C'
E'
C
Cce
LE
MBC964
L3
E
QLB = 50; QLE = 50; QLB,E(f) = QLB,E(f/fc);
fc = scaling frequency = 1 GHz.
Fig.19 Package equivalent circuit SOT343N.
List of components (see Fig.19)
DESIGNATION
VALUE
UNIT
30
CJC
229.0
fF
Cce
31
VJC
394.7
mV
L1
32
MJC
0.043

L2
0.10
nH
0.25
nH
33
XCJC
0.050

L3
34
TR
13.26
ns
LB
0.40
nH
CJS
0.000
F
LE
0.40
nH
35
(1)
1998 Sep 23
10
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
PACKAGE OUTLINES
Plastic surface-mounted package; 4 leads
SOT343N
D
E
B
A
X
HE
y
v M A
e
4
3
Q
A
A1
c
1
2
b1
bp
w M B
Lp
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-05-21
06-03-16
SOT343N
1998 Sep 23
EUROPEAN
PROJECTION
11
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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1998 Sep 23
12
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
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1998 Sep 23
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Printed in The Netherlands
R77/03/pp14
Date of release: 1998 Sep 23
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