Data Sheet

BFG325/XR
NPN 14 GHz wideband transistor
Rev. 2 — 15 September 2011
Product data sheet
1. Product profile
1.1 General description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package.
1.2 Features and benefits




High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability
1.3 Applications
 Intended for Radio Frequency (RF) front end applications in the GHz range, such as:
 analog and digital cellular telephones
 cordless telephones (Cordless Telephone (CT), Personal Communication
Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)
 radar detectors
 pagers
 Satellite Antenna TeleVision (SATV) tuners
 repeater amplifiers in fiber-optic systems
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VCBO
collector-base voltage
open emitter
-
-
15
V
VCEO
collector-emitter voltage
open base
-
-
6
V
IC
collector current (DC)
-
-
35
mA
Ptot
total power dissipation
Tsp  90 C
-
-
210
mW
hFE
DC current gain
IC = 15 mA; VCE = 3 V;
Tj = 25 C
60
100
200
CCBS
collector-base
capacitance
VCB = 5 V; f = 1 MHz;
emitter grounded
-
0.26
0.4
pF
fT
transition frequency
IC = 15 mA; VCE = 3 V;
f = 1 GHz; Tamb = 25 C
-
14
-
GHz
[1]
BFG325/XR
NXP Semiconductors
NPN 14 GHz wideband transistor
Table 1.
Quick reference data …continued
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Gmax
maximum power gain[2]
IC = 15 mA; VCE = 3 V;
f = 1.8 GHz; Tamb = 25 C
-
18.3
-
dB
s212
insertion power gain
IC = 15 mA; VCE = 3 V;
f = 1.8 GHz; Tamb = 25 C;
ZS = ZL = 50 
-
14
-
dB
NF
noise figure
s = opt; IC = 3 mA;
VCE = 3 V; f = 2 GHz
-
1.1
-
dB
[1]
Tsp is the temperature at the soldering point of the collector pin.
[2]
Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG, see Figure 4.
2. Pinning information
Table 2.
Pinning
Pin
Description
1
collector
2
emitter
3
base
4
emitter
Simplified outline
3
Symbol
4
1
3
2
2, 4
1
sym086
3. Ordering information
Table 3.
Ordering information
Type number
Package
BFG325/XR
SC-61AA plastic surface mounted package; reverse pinning;
4 leads
Name
Description
Version
SOT143R
4. Marking
Table 4.
Type number
Marking code[1]
BFG325/XR
S2*
[1]
BFG325_XR
Product data sheet
Marking codes
* = p: made in Hong Kong.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 15 September 2011
© NXP B.V. 2011. All rights reserved.
2 of 13
BFG325/XR
NXP Semiconductors
NPN 14 GHz wideband transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
15
V
VCEO
collector-emitter voltage
open base
-
6
V
VEBO
emitter-base voltage
open collector
-
2
V
IC
collector current (DC)
-
35
mA
-
210
mW
Tsp  90 C
[1]
Ptot
total power dissipation
Tstg
storage temperature
65
+175
C
Tj
junction temperature
-
175
C
[1]
Tsp is the temperature at the soldering point of the collector pin.
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol Parameter
Rth(j-sp)
[1]
Conditions
thermal resistance from junction to solder point
Tsp  90 C
[1]
Typ
Unit
405
K/W
Tsp is the temperature at the soldering point of the collector pin.
7. Characteristics
Table 7.
Characteristics
Tj = 25 C; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
nA
ICBO
collector-base cut-off current
IE = 0 A; VCB = 5 V
-
-
15
hFE
DC current gain
IC = 15 mA; VCE = 3 V
60
100
200
CCBS
collector-base capacitance
VCB = 5 V; f = 1 MHz; emitter grounded
-
0.26
0.4
pF
CCES
collector-emitter capacitance
VCE = 5 V; f = 1 MHz; base grounded
-
0.27
-
pF
CEBS
emitter-base capacitance
VEB = 0.5 V; f = 1 MHz; collector grounded
-
0.53
-
pF
fT
transition frequency
IC = 15 mA; VCE = 3 V; f = 1 GHz;
Tamb = 25 C
-
14
-
GHz
Gmax
maximum power gain[1]
IC = 15 mA; VCE = 3 V; f = 1.8 GHz;
Tamb = 25 C
-
18.3
-
dB
s212
insertion power gain
IC = 15 mA; VCE = 3 V; Tamb = 25 C;
ZS = ZL = 50 
f = 1.8 GHz
-
14
-
dB
f = 3 GHz
-
10
-
dB
NF
noise figure
s = opt; IC = 3 mA; VCE = 3 V; f = 2 GHz
-
1.1
-
dB
PL(1dB)
output power at 1 dB gain
compression
IC = 15 mA; VCE = 3 V; f = 1.8 GHz;
Tamb = 25 C; ZS = ZL = 50 
-
8.7
-
dBm
IP3
third order intercept point
IC = 15 mA; VCE = 3 V; f = 1.8 GHz;
Tamb = 25 C; ZS = ZL = 50 
-
19.4
-
dBm
BFG325_XR
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 15 September 2011
© NXP B.V. 2011. All rights reserved.
3 of 13
BFG325/XR
NXP Semiconductors
NPN 14 GHz wideband transistor
[1]
Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG, see Figure 4.
2
2
1 + Ds – s 11 – s 22
2
K is the Rollet stability factor: K = ----------------------------------------------------------- where Ds = s 11  s 22 – s 12  s 21 .
2 s  s
21
12
MSG = maximum stable gain.
001aac147
250
Ptot
(mW)
001aac148
35
IC
(mA)
30
IB = 350 μA
200
300 μA
25
250 μA
150
20
100
200 μA
15
150 μA
10
100 μA
5
50 μA
50
0
0
50
100
150
0
200
0
Tsp (°C)
Fig 1.
Power derating curve
Fig 2.
001aac149
0.34
1
2
3
4
5
VCE (V)
6
Collector current as a function of
collector-emitter voltage; typical values
001aac150
40
G
(dB)
CCBS
(pF)
MSG
30
s21 2
0.30
20
Gmax
0.26
10
0
0.22
0
1
2
3
4
10
5
102
IC = 0 mA; f = 1 MHz.
Fig 3.
Product data sheet
104
IC = 15 mA; VCE = 3 V.
Collector-base capacitance as a function of
collector-base voltage; typical values
BFG325_XR
103
f (MHz)
VCB (V)
Fig 4.
Gain as a function of frequency; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 15 September 2011
© NXP B.V. 2011. All rights reserved.
4 of 13
BFG325/XR
NXP Semiconductors
NPN 14 GHz wideband transistor
90°
1.0
+1
135°
+0.5
0.8
45°
+2
0.6
+0.2
0.4
+5
3 GHz
0.2
180°
0
0.2
1
0.5
2
5
10
0°
0
40 MHz
−5
−0.2
−135°
−2
−0.5
−45°
−1
−90°
1.0
001aac151
VCE = 3 V; IC = 15 mA; Zo = 50 .
Fig 5.
Common emitter input reflection coefficient (s11); typical values
90°
135°
45°
40 MHz
180°
50
40
30
20
10
0 3 GHz
−135°
0°
−45°
−90°
001aac152
VCE = 3 V; IC = 15 mA.
Fig 6.
BFG325_XR
Product data sheet
Common emitter forward transmission coefficient (s21); typical values
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 15 September 2011
© NXP B.V. 2011. All rights reserved.
5 of 13
BFG325/XR
NXP Semiconductors
NPN 14 GHz wideband transistor
90°
135°
45°
3 GHz
180°
0.5
0.4
0.3
0.2
0.1
0
40 MHz
0°
−135°
−45°
−90°
001aac153
VCE = 3 V; IC = 15 mA.
Fig 7.
Common emitter reverse transmission coefficient (s12); typical values
90°
1.0
+1
135°
+0.5
0.8
45°
+2
0.6
+0.2
0.4
+5
0.2
180°
0
0.2
1
0.5
2
5
10
0°
0
40 MHz
3 GHz
−5
−0.2
−135°
−2
−0.5
−45°
−1
−90°
1.0
001aac154
VCE = 3 V; IC = 15 mA; Zo = 50 .
Fig 8.
BFG325_XR
Product data sheet
Common emitter output reflection coefficient (s22); typical values
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 15 September 2011
© NXP B.V. 2011. All rights reserved.
6 of 13
BFG325/XR
NXP Semiconductors
NPN 14 GHz wideband transistor
8. Application information
Table 8.
BFG325_XR
Product data sheet
SPICE parameters of the BFG325 DIE
Sequence
Parameter
Value
Unit
1
IS
26.6
aA
2
BF
200
-
3
NF
1
-
4
VAF
40
V
5
IKF
105
mA
6
ISE
2.3
fA
7
NE
2.114
-
8
BR
10
-
9
NR
1
-
10
VAR
2.5
V
11
IKR
10
A
12
ISC
0
aA
13
NC
1.5
-
14
RB
3.6

15
RE
1.5

16
RC
2.6

17
CJE
185.6
fF
18
VJE
890
mV
19
MJE
0.294
-
20
CJC
77.06
fF
21
VJC
601
mV
22
MJC
0.159
-
23
XCJC
1
-
24
FC
0.7
-
25
TF
8.1
ps
26
XTF
10
-
27
VTF
1000
V
28
ITF
150
mA
29
PTF
0
deg
30
TR
0
ns
31
KF
0
-
32
AF
1
-
33
TNOM
25
C
34
EG
1.014
eV
35
XTB
0
-
36
XTI
8
-
37
Q1.AREA
2.5
-
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 15 September 2011
© NXP B.V. 2011. All rights reserved.
7 of 13
BFG325/XR
NXP Semiconductors
NPN 14 GHz wideband transistor
L2
CCB
C_base_pad
BJT1
C_emitter_pad
CCE
LB
L1
CBE
CHIP
LE
L3
001aac155
Fig 9.
Table 9.
BFG325_XR
Product data sheet
Package equivalent circuit of SOT143R
List of components; see Figure 9
Designation
Value
Unit
CCB
17
fF
CBE
84
fF
CCE
191
fF
C_base_pad
67
fF
C_emitter_pad
142
fF
LB
0.95
nH
LE
0.40
nH
L1
0.12
nH
L2
0.21
nH
L3
0.06
nH
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 15 September 2011
© NXP B.V. 2011. All rights reserved.
8 of 13
BFG325/XR
NXP Semiconductors
NPN 14 GHz wideband transistor
9. Package outline
Plastic surface-mounted package; reverse pinning; 4 leads
D
SOT143R
B
E
A
X
y
HE
v M A
e
bp
w M B
3
4
Q
A
A1
c
2
1
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.55
0.25
0.45
0.25
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOT143R
JEITA
SC-61AA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-16
06-03-16
Fig 10. Package outline SOT143R (SC-61AA)
BFG325_XR
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 15 September 2011
© NXP B.V. 2011. All rights reserved.
9 of 13
BFG325/XR
NXP Semiconductors
NPN 14 GHz wideband transistor
10. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BFG325_XR v.2
20110915
Product data sheet
-
BFG325_XR v.1
Modifications:
BFG325_XR v.1
(9397 750 14247)
BFG325_XR
Product data sheet
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
•
Legal texts have been adapted to the new company name where appropriate.
Package outline drawings have been updated to the latest version.
20050202
Product data sheet
-
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 15 September 2011
-
© NXP B.V. 2011. All rights reserved.
10 of 13
BFG325/XR
NXP Semiconductors
NPN 14 GHz wideband transistor
11. Legal information
11.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
11.3
Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
BFG325_XR
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 15 September 2011
© NXP B.V. 2011. All rights reserved.
11 of 13
BFG325/XR
NXP Semiconductors
NPN 14 GHz wideband transistor
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
11.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BFG325_XR
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 15 September 2011
© NXP B.V. 2011. All rights reserved.
12 of 13
BFG325/XR
NXP Semiconductors
NPN 14 GHz wideband transistor
13. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 15 September 2011
Document identifier: BFG325_XR