Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFG425W
NPN 25 GHz wideband transistor
Product specification
Supersedes data of 1998 Mar 11
2010 Sep 15
NXP Semiconductors
Product specification
NPN 25 GHz wideband transistor
BFG425W
FEATURES
PINNING
 Very high power gain
PIN
DESCRIPTION
 Low noise figure
1
emitter
 High transition frequency
2
base
 Emitter is thermal lead
3
emitter
 Low feedback capacitance.
4
collector
APPLICATIONS
 RF front end
handbook, halfpage
 Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
3
4
 Radar detectors
 Pagers
2
 Satellite television tuners (SATV)
Top view
1
MSB842
 High frequency oscillators.
Marking code: P5*
* = - : made in Hong Kong
* = p : made in Hong Kong
* = t : made in Malaysia
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT


10
V
VCBO
collector-base voltage
VCEO
collector-emitter voltage open base


4.5
V
IC
collector current (DC)

25
30
mA
mW
open emitter
Ptot
total power dissipation
Ts  103 C


135
hFE
DC current gain
IC = 25 mA; VCE = 2 V; Tj = 25 C
50
80
120
Cre
feedback capacitance
IC = 0; VCB = 2 V; f = 1 MHz

95

fF
fT
transition frequency
IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C 
25

GHz
Gmax
maximum power gain
IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C 
20

dB
F
noise figure
IC = 2 mA; VCE = 2 V; f = 2 GHz; S = opt
1.2

dB

CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
2010 Sep 15
2
NXP Semiconductors
Product specification
NPN 25 GHz wideband transistor
BFG425W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter

10
V
VCEO
collector-emitter voltage
open base

4.5
V
VEBO
emitter-base voltage
open collector

1
V
IC
collector current (DC)

30
mA
Ptot
total power dissipation

135
mW
Tstg
storage temperature
65
+150
C
Tj
operating junction temperature

150
C
Ts  103 C; note 1; see Fig.2
Note
1. Ts is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to soldering point
MGG681
200
handbook, halfpage
Ptot
(mW)
150
100
50
0
0
40
80
120
160
Ts (°C)
Fig.2 Power derating curve.
2010 Sep 15
3
VALUE
UNIT
350
K/W
NXP Semiconductors
Product specification
NPN 25 GHz wideband transistor
BFG425W
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IC = 2.5 A; IE = 0
V(BR)CBO
collector-base breakdown voltage
V(BR)CEO
collector-emitter breakdown voltage IC = 1 mA; IB = 0
V(BR)EBO
emitter-base breakdown voltage
IE = 2.5 A; IC = 0
MIN.
TYP.
MAX.
UNIT
10


V
4.5


V
1


V
nA
ICBO
collector-base leakage current
IE = 0; VCB = 4.5 V


15
hFE
DC current gain
IC = 25 mA; VCE = 2 V; see Fig.3
50
80
120
Cc
collector capacitance
IE = ie = 0; VCB = 2 V; f = 1 MHz

300

Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz

575

fF
Cre
feedback capacitance
IC = 0; VCB = 2 V; f = 1 MHz;
see Fig.4

95

fF
fT
transition frequency
IC = 25 mA; VCE = 2 V; f = 2 GHz;
Tamb = 25 C; see Fig.5

25

GHz
Gmax
maximum power gain; note 1
IC = 25 mA; VCE = 2 V; f = 2 GHz;
Tamb = 25 C; see Figs 7 and 8

20

dB
insertion power gain
IC = 25 mA; VCE = 2 V; f = 2 GHz;
Tamb = 25 C; see Fig.8

17

dB
noise figure
IC = 2 mA; VCE = 2 V; f = 900 MHz;
S = opt; see Fig.13

0.8

dB
IC = 2 mA; VCE = 2 V; f = 2 GHz;
S = opt; see Fig.13

1.2

dB
S 21
2
F
fF
PL1
output power at 1 dB gain
compression
IC = 25 mA; VCE = 2 V; f = 2 GHz;
ZS = ZS opt; ZL = ZL opt; note 2

12

dBm
ITO
third order intercept point
IC = 25 mA; VCE = 2 V; f = 2 GHz;
ZS = ZS opt; ZL = ZL opt; note 2

22

dBm
Notes
1. Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG; see Figs 6, 7 and 8.
2. ZS is optimized for noise; ZL is optimized for gain.
2010 Sep 15
4
NXP Semiconductors
Product specification
NPN 25 GHz wideband transistor
BFG425W
MGG682
120
MGG683
200
handbook, halfpage
handbook, halfpage
Cre
(fF)
hFE
160
(1)
(2)
(3)
80
120
80
40
40
0
0
0
10
20
30
40
IC (mA)
0
1
(1) VCE = 3 V.
(2) VCE = 2 V.
(3) VCE = 1 V.
IC = 0; f = 1 MHz.
Fig.3
Fig.4
DC current gain as a function of collector
current; typical values.
MGG684
25
2
3
4
5
VCB (V)
Feedback capacitance as a function of
collector-base voltage; typical values.
MGG685
30
handbook, halfpage
handbook, halfpage
fT
(GHz)
MSG
(dB)
20
20
15
10
10
5
0
1
10
IC (mA)
0
102
0
10
VCE = 2 V; f = 2 GHz; Tamb = 25 C.
VCE = 2 V; f = 900 MHz.
Fig.5
Fig.6
Transition frequency as a function of
collector current; typical values.
2010 Sep 15
5
20
30
IC (mA)
40
Maximum stable gain as a function of
collector current; typical values.
NXP Semiconductors
Product specification
NPN 25 GHz wideband transistor
BFG425W
MGG687
MGG686
30
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
MSG
40
MSG
Gmax
20
30
S21
Gmax
20
10
10
0
0
0
10
20
30
IC (mA)
40
VCE = 2 V; f = 2 GHz.
Fig.7
102
10
103
104
IC = 25 mA; VCE = 2 V.
Gain as a function of collector current;
typical values.
Fig.8
Gain as a function of frequency;
typical values.
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
3 GHz
180°
0.2
0
0.5
1
2
5
0°
0
40 MHz
5
0.2
0.5
2
−135°
−45°
1
1.0
−90°
MGG689
IC = 25 mA; VCE = 2 V; Zo = 50 
Fig.9 Common emitter input reflection coefficient (S11); typical values.
2010 Sep 15
f (MHz)
6
NXP Semiconductors
Product specification
NPN 25 GHz wideband transistor
BFG425W
90°
handbook, full pagewidth
135°
45°
3 GHz
40 MHz
180°
50
40
30
20
0°
10
−135°
−45°
−90°
MGG690
IC = 25 mA; VCE = 2 V.
Fig.10 Common emitter forward transmission coefficient (S21); typical values.
90°
handbook, full pagewidth
135°
45°
3 GHz
0.5
0.4
0.3
0.2
0.1
180°
0°
40 MHz
−135°
−45°
−90°
MGG691
IC = 25 mA; VCE = 2 V.
Fig.11 Common emitter reverse transmission coefficient (S12); typical values.
2010 Sep 15
7
NXP Semiconductors
Product specification
NPN 25 GHz wideband transistor
BFG425W
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
0°
0
5
3 GHz
0.2
40 MHz
0.5
2
−135°
−45°
1
1.0
−90°
MGG692
IC = 25 mA; VCE = 2 V; Zo = 50 
Fig.12 Common emitter output reflection coefficient (S22); typical values.
Noise data
VCE = 2 V; typical values.
f
(MHz)
900
2000
IC
(mA)
Fmin
(dB)
mag
angle
rn
()
1
0.7
0.67
19.1
0.40
2
0.8
0.48
17.8
0.27
4
1
0.28
11.7
0.24
10
1.4
0.02
63.9
0.19
15
1.6
0.11
162.4
0.18
20
1.9
0.19
165.5
0.18
25
2.1
0.25
166.3
0.19
30
2.3
0.29
166.5
0.19
Fmin
(dB)
2
(1)
1
1.3
0.56
57.5
0.36
2
1.2
0.43
57.2
0.25
4
1.2
0.22
60.8
0.18
10
1.6
0.06
137.4
0.19
15
1.9
0.13
162.1
0.20
20
2.2
0.17
155.5
0.20
25
2.5
0.22
152.2
0.21
30
2.8
0.27
150.8
0.25
2010 Sep 15
MGG688
3
handbook, halfpage
(2)
1
0
0
10
20
IC (mA)
30
(1) VCE = 2 V; f = 2 GHz.
(2) VCE = 2 V; f = 900 MHz.
Fig.13 Minimum noise figure as a function of the
collector current; typical values.
8
NXP Semiconductors
Product specification
NPN 25 GHz wideband transistor
BFG425W
SPICE parameters for the BFG425W die
SEQUENCE No.
PARAMETER
VALUE
SEQUENCE No.
UNIT
(2)(3)
PARAMETER
VALUE
UNIT
1
IS
47.17
aA
39
Cbp
145
fF
2
BF
145.0

40 (2)
Rsb1
25

Rsb2
19

3
NF
0.993

41 (3)
4
VAF
31.12
V
Notes
5
IKF
304.0
mA
6
ISE
300.2
fA
1. These parameters have not been extracted, the
default values are shown.
7
NE
3.000

8
BR
11.37

9
NR
0.985

10
VAR
1.874
V
11
IKR
0.121
A
12
ISC
484.8
aA
13
NC
1.546

14
RB
14.41

15
IRB
0.000
A
16
RBM
6.175

17
RE
177.9
m
18
RC
1.780

XTB
1.500

(1)
EG
1.110
eV
21 (1)
XTI
3.000

22
CJE
310.9
fF
23
VJE
900.0
mV
24
MJE
0.346

25
TF
4.122
ps
19 (1)
20
2. Bonding pad capacity Cbp in series with substrate
resistance Rsb1 between B and E.
3. Bonding pad capacity Cbp in series with substrate
resistance Rsb2 between C and E.
C cb
handbook, halfpage
L1
B
L2
B'
C'
E'
C be
C
Cce
MGD956
L3
E
QLB = 50; QLE = 50; QLB,E(f) = QLB,E(f/fc)
fc = scaling frequency = 1 GHz.
26
XTF
68.20

27
VTF
2.004
V
28
ITF
1.525
A
29
PTF
0.000
deg
30
CJC
137.7
fF
31
VJC
556.9
mV
Cbe
80
fF
32
MJC
0.207

Ccb
2
fF
33
XCJC
0.500

Cce
80
fF
1.1
nH
Fig.14 Package equivalent circuit SOT343R2.
List of components (see Fig.14)
DESIGNATION
VALUE
UNIT
34 (1)
TR
0.000
ns
L1
35 (1)
CJS
667.5
fF
L2
1.1
nH
36 (1)
VJS
418.3
mV
L3 (note 1)
0.25
nH
37 (1)
MJS
0.239

38
FC
0.550

2010 Sep 15
Note
1. External emitter inductance to be added separately
due to the influence of the printed-circuit board.
9
NXP Semiconductors
Product specification
NPN 25 GHz wideband transistor
BFG425W
PACKAGE OUTLINE
Plastic surface-mounted package; reverse pinning; 4 leads
D
SOT343R
E
B
A
X
HE
y
v M A
e
3
4
Q
A
A1
c
2
w M B
1
bp
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-05-21
06-03-16
SOT343R
2010 Sep 15
EUROPEAN
PROJECTION
10
NXP Semiconductors
Product specification
NPN 25 GHz wideband transistor
BFG425W
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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expected to result in personal injury, death or severe
2010 Sep 15
11
NXP Semiconductors
Product specification
NPN 25 GHz wideband transistor
BFG425W
Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
Quick reference data  The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
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sheet expressly states that this specific NXP
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2010 Sep 15
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and the package outline drawings which were updated to the latest version.
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Printed in The Netherlands
R77/05/pp13
Date of release: 2010 Sep 15
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