Data Sheet

BFG505; BFG505/X
NPN 9 GHz wideband transistors
Rev. 04 — 22 November 2007
Product data sheet
IMPORTANT NOTICE
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depending on the version)
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NXP Semiconductors
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
FEATURES
BFG505; BFG505/X
PINNING
• High power gain
DESCRIPTION
PIN
• Low noise figure
BFG505
• High transition frequency
• Gold metallization ensures excellent reliability.
APPLICATIONS
BFG505/X
1
collector
collector
2
base
emitter
3
emitter
base
4
emitter
emitter
RF front end applications in the GHz range, such as
analog and digital cellular telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar detectors, pagers and
satellite TV tuners (SATV).
handbook, 2 columns
4
3
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT143B plastic package.
1
MARKING
2
Top view
TYPE NUMBER
MSB014
CODE
BFG505
%ME
BFG505/X
%MK
Fig.1 Simplified outline SOT143B.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
TYP.
MAX.
UNIT
−
−
20
V
−
−
15
V
VCBO
collector-base voltage
VCES
collector-emitter voltage RBE = 0
IC
collector current (DC)
−
−
18
mA
Ptot
total power dissipation
Ts ≤ 130 °C
−
−
150
mW
hFE
DC current gain
VCE = 6 V; IC = 5 mA
60
120
250
Cre
feedback capacitance
VCB = 6 V; IC = ic = 0; f = 1 MHz
−
0.2
−
fT
transition frequency
VCE = 6 V; IC = 5 mA; f = 1 GHz
−
9
−
GHz
GUM
maximum unilateral
power gain
VCE = 6 V; IC = 5 mA;
Tamb = 25 °C; f = 900 MHz
−
20
−
dB
VCE = 6 V; IC = 5 mA;
Tamb = 25 °C; f = 2 GHz
−
13
−
dB
pF
S212
insertion power gain
VCE = 6 V; Ic = 5 mA;
Tamb = 25 °C; f = 900 MHz
16
17
−
dB
F
noise figure
Γs = Γopt; VCE = 6 V; Ic = 1.25 mA;
Tamb = 25 °C; f = 900 MHz
−
1.2
1.7
dB
Γs = Γopt; VCE = 6 V; Ic = 5 mA;
Tamb = 25 °C; f = 900 MHz
−
1.6
2.1
dB
Γs = Γopt; VCE = 6 V; Ic = 1.25 mA;
Tamb = 25 °C; f = 2 GHz
−
1.9
−
dB
Rev. 04 - 22 November 2007
2 of 13
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCES
collector-emitter voltage
RBE = 0
−
15
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
collector current (DC)
−
18
mA
Ptot
total power dissipation
Ts ≤ 130 °C; see Fig.2; note 1
−
150
mW
Tstg
storage temperature range
−65
150
°C
Tj
junction temperature
−
175
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
note 1
VALUE
UNIT
290
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
MRA638-1
200
handbook, halfpage
Ptot
(mW)
150
100
50
0
0
50
100
150
200
Ts (°C)
Fig.2 Power derating curve.
Rev. 04 - 22 November 2007
3 of 13
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
TYP.
−
MAX.
50
UNIT
ICBO
collector cut-off current
VCB = 6 V; IE = 0
nA
hFE
DC current gain
IC = 5 mA; VCE = 6 V; see Fig.3
60
120
250
Ce
emitter capacitance
IC = ic = 0 VEB = 0.5 V; f = 1 MHz
−
0.4
−
pF
Cc
collector capacitance
VCB = 6 V; IE = ie = 0; f = 1 MHz
−
0.3
−
pF
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz; see Fig.4
−
0.2
−
pF
fT
transition frequency
IC = 5 mA; VCE = 6 V; f = 1 GHz;
see Fig.5
−
9
−
GHz
GUM
maximum unilateral
power gain; note 1
IC = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
−
20
−
dB
Ic = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
−
13
−
dB
S212
insertion power gain
Ic = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
16
17
−
dB
F
noise figure
Γs = Γopt; IC = 1.25 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
−
1.2
1.7
dB
Γs = Γopt; IC = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
−
1.6
2.1
dB
Γs = Γopt; IC = 1.25 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
−
1.9
−
dB
PL1
output power at 1 dB gain
compression
IC = 5 mA; VCE = 6 V; RL = 50 Ω;
Tamb = 25 °C; f = 900 MHz
−
4
−
dBm
ITO
third order intercept point
note 2
−
10
−
dBm
Notes
S 21 2
dB.
1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------( 1 – S 11 2 ) ( 1 – S 22 2 )
2. VCE = 6 V; IC = 5 mA; RL = 50 Ω; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz;
measured at 2fp − fq = 898 MHz and 2fq − fp = 904 MHz.
Rev. 04 - 22 November 2007
4 of 13
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
MRA639
250
handbook, halfpage
BFG505; BFG505/X
MRA640
0.4
handbook, halfpage
hFE
Cre
(pF)
200
0.3
150
0.2
100
0.1
50
0
10−3
10−2
10−1
1
10
102
IC (mA)
0
2
4
6
8
10
VCB (V)
IC = 0; f = 1 MHz.
VCE = 6 V.
Fig.3
0
DC current gain as a function of collector
current.
MRA641
12
handbook, halfpage
Fig.4
Feedback capacitance as a function of
collector-base voltage.
MRA642
25
handbook, halfpage
fT
gain
(dB)
VCE = 6 V
(GHz)
GUM
20
VCE = 3 V
8
MSG
15
10
4
5
0
10−1
1
10
IC (mA)
102
0
4
8
12
IC (mA)
VCE = 6 V; f = 900 MHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
Gmax = maximum available gain.
Tamb = 25 °C; f = 1 GHz.
Fig.5
0
Transition frequency as a function of
collector current.
Fig.6 Gain as a function of collector current.
Rev. 04 - 22 November 2007
5 of 13
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
MRA643
25
MRA644
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
20
40
MSG
Gmax
15
GUM
30
MSG
GUM
10
20
5
10
0
0
4
8
12
IC (mA)
VCE = 6 V; f = 2 GHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
Gmax = maximum available gain.
0
10
103
MRA645
50
104
Fig.8 Gain as a function of frequency.
MRA650
5
handbook, halfpage
handbook, halfpage
Fmin
GUM
f = 900 MHz
(dB)
4
40
1000 MHz
MSG
30
3
20
2
Gmax
10
0
10
f (MHz)
VCE = 6 V; IC = 1.25 mA.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
Gmax = maximum available gain.
Fig.7 Gain as a function of collector current.
gain
(dB)
102
102
103
f (MHz)
1
104
VCE = 6 V; IC = 5 mA.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
Gmax = maximum available gain.
0
10−1
Gass
20
Gass
(dB)
15
2000 MHz
10
5
2000 MHz
Fmin
1000 MHz
900 MHz
500 MHz
0
1
IC (mA)
−5
10
VCE = 6 V.
Fig.9 Gain as a function of frequency.
Fig.10 Minimum noise figure and associated
available gain as functions of collector
current.
Rev. 04 - 22 November 2007
6 of 13
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
MRA651
5
andbook, halfpageIC = 1.25 mA
20
Gass
5 mA
Fmin
(dB)
4
(dB)
15
Gass
3
10
2
5
5 mA
1
BFG505; BFG505/X
Fmin
0
1.25 mA
0
102
103
−5
104
f (MHz)
VCE = 6 V.
Fig.11 Minimum noise figure and associated
available gain as functions of frequency.
pot. unst.
region
handbook, full pagewidth
90°
1.0
1
135°
2
0.5
0.8
45°
0.6
stability
0.2
circle
180°
Fmin = 1. 2 dB
0.2
0
0.5
1
0.4
5
ΓOPT
F = 1.5 dB
2
5
0.2
0°
0
F = 2 dB
F = 3 dB
0.2
−135°
0.5
5
2
−45°
1
MRA652
Zo = 50 Ω.
VCE = 6 V; Ic = 1.25 mA; f = 900 MHz.
1.0
−90°
Fig.12 Noise circle figure.
Rev. 04 - 22 November 2007
7 of 13
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
handbook, full pagewidth
90°
pot. unst.
region
1.0
1
135°
0.8
45°
2
0.5
0.6
ΓOPT
0.2
stability
circle
180°
0.4
5
Fmin = 1. 9 dB
0.2
0.2
0
0.5
F = 2.5 dB
1
2
5
0°
0
F = 3 dB
F = 4 dB
5
0.2
−135°
0.5
2
−45°
1
MRA653
1.0
−90°
Zo = 50 Ω.
VCE = 6 V; Ic = 1.25 mA; f = 2000 MHz.
Fig.13 Noise circle figure.
Rev. 04 - 22 November 2007
8 of 13
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
3 GHz
180°
0.2
0
0.5
1
2
5
0°
0
40 MHz
5
0.2
0.5
−135°
2
−45°
1
MRA646
1.0
−90°
VCE = 6 V; IC = 5 mA.
Zo = 50 Ω.
Fig.14 Common emitter input reflection coefficient (S11).
90°
handbook, full pagewidth
135°
45°
3 GHz
40 MHz
180°
15
12
9
6
0°
3
−135°
−45°
−90°
MRA647
VCE = 6 V; IC = 5 mA.
Fig.15 Common emitter forward transmission coefficient (S21).
Rev. 04 - 22 November 2007
9 of 13
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
90°
handbook, full pagewidth
135°
45°
3 GHz
40 MHz
180°
0.25
0.20
0.15
0.10
0°
0.05
−135°
−45°
−90°
MRA648
VCE = 6 V; IC = 5 mA.
Fig.16 Common emitter reverse transmission coefficient (S12).
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
0°
40 MHz
0
5
0.2
3 GHz
−135°
0.5
2
−45°
1
MRA649
VCE = 6 V; IC = 5 mA.
Zo = 50 Ω.
1.0
−90°
Fig.17 Common emitter output reflection coefficient (S22).
Rev. 04 - 22 November 2007
10 of 13
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
HE
v M A
e
bp
w M B
4
3
Q
A
A1
c
1
2
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
SOT143B
Rev. 04 - 22 November 2007
11 of 13
BFG505; BFG505/X
NXP Semiconductors
NPN 9 GHz wideband transistors
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
Rev. 04 - 22 November 2007
12 of 13
BFG505; BFG505/X
NXP Semiconductors
NPN 9 GHz wideband transistors
Revision history
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BFG505_X_N_4
20071122
Product data sheet
-
BFG505_X_3
Modifications:
•
Marking table on page 2; changed code
BFG505_X_3
(9397 750 04348)
19981002
Product specification
-
BFG505XR_CNV_2
BFG505XR_CNV_2
19950901
Product specification
-
BFG505XR_1
BFG505XR_1
19921101
Product specification
-
-
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 22 November 2007
Document identifier: BFG505_X_N_4
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