Data Sheet

BFG520; BFG520/X; BFG520/XR
NPN 9 GHz wideband transistor
Rev. 04 — 23 November 2007
Product data sheet
IMPORTANT NOTICE
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- NXP Semiconductors, which will be used in future data sheets together with new contact
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depending on the version)
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NXP Semiconductors
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
FEATURES
BFG520; BFG520/X; BFG520/XR
PINNING
• High power gain
PIN
• Low noise figure
DESCRIPTION
fpage
4
3
2
BFG520 (Fig.1) Code: %MF
• High transition frequency
1
collector
• Gold metallization ensures
excellent reliability.
2
base
1
3
emitter
Top view
4
emitter
DESCRIPTION
BFG520/X (Fig.1) Code: %ML
NPN silicon planar epitaxial
transistors, intended for applications
in the RF frontend in the GHz range,
such as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, pagers and satellite TV
tuners (SATV) and repeater
amplifiers in fibre-optic systems.
1
collector
2
emitter
3
base
4
emitter
The transistors are encapsulated in
4-pin, dual-emitter plastic SOT143
and SOT143R envelopes.
MSB014
Fig.1 SOT143B.
handbook, 2 columns
3
4
BFG520/XR (Fig.2) Code: %MP
1
collector
2
emitter
3
base
4
emitter
2
1
Top view
MSB035
Fig.2 SOT143R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
−
−
20
V
VCEO
collector-emitter voltage open base
−
−
15
V
Ic
DC collector current
−
−
70
mA
mW
open emitter
Ptot
total power dissipation
up to Ts = 88 °C; note 1
−
−
300
hFE
DC current gain
IC = 20 mA; VCE = 6 V; Tj = 25 °C
60
120
250
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz
−
0.3
−
pF
fT
transition frequency
IC = 20 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 °C
−
9
−
GHz
GUM
maximum unilateral
power gain
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
−
19
−
dB
IC = 20 mA; VCE = 6 V; f = 2 GHz;
Tamb = 25 °C
−
13
−
dB
S212
insertion power gain
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
17
18
−
dB
F
noise figure
Γs = Γopt ; Ic = 5 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
−
1.1
1.6
dB
Γs = Γopt ; IC = 20 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
−
1.6
2.1
dB
Γs = Γopt ; IC = 5 mA; VCE = 8 V;
f = 2 GHz; Tamb = 25 °C
−
1.9
−
dB
Rev. 04 - 23 November 2007
2 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
DC collector current
−
70
mA
Ptot
total power dissipation
up to Ts = 88 °C; note 1
−
300
mW
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
175
°C
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to
soldering point
up to Ts = 88 °C; note 1
THERMAL RESISTANCE
290 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
Rev. 04 - 23 November 2007
3 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
ICBO
collector cut-off current
IE = 0; VCB = 6 V
−
−
50
UNIT
nA
hFE
DC current gain
IC = 20 mA; VCE = 6 V
60
120
250
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
1
−
pF
Cc
collector capacitance
IE = ie = 0; VCB = 6 V; f = 1 MHz
−
0.6
−
pF
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz
−
0.3
−
pF
fT
transition frequency
IC = 20 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 °C
−
9
−
GHz
GUM
maximum unilateral
power gain (note 1)
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
−
19
−
dB
IC = 20 mA; VCE = 6 V; f = 2 GHz;
Tamb = 25 °C
−
13
−
dB
S212
insertion power gain
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
17
18
−
dB
F
noise figure
Γs = Γopt; IC = 5 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
−
1.1
1.6
dB
Γs = Γopt; IC = 20 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
−
1.6
2.1
dB
Γs = Γopt; IC = 5 mA; VCE = 6 V;
f = 2 GHz; Tamb = 25 °C
−
1.9
−
dB
PL1
output power at 1 dB gain
compression
IC = 20 mA; VCE = 6 V; RL = 50 Ω;
f = 900 MHz; Tamb = 25 °C
−
17
−
dBm
ITO
third order intercept point
note 2
−
26
−
dBm
Vo
output voltage
note 3
−
275
−
mV
d2
second order intermodulation
distortion
IC = 20 mA; VCE = 6 V; Vo = 75 mV;
Tamb = 25 °C; f(p+q) = 810 MHz
−
−50
−
dB
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S 21
- dB.
G UM = 10 log ------------------------------------------------------------2 
2

 1 – S 11   1 – S 22 
2. IC = 20 mA; VCE = 6 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz;
measured at f(2p−q) = 898 MHz and f(2q−p) = 904 MHz.
3. dim = −60 dB (DIN 45004B);
Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(p+q−r) = 793.25 MHz
Rev. 04 - 23 November 2007
4 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
MRA670-1
400
BFG520; BFG520/X; BFG520/XR
MRA671
250
handbook, halfpage
handbook, halfpage
Ptot
(mW)
hFE
200
300
150
200
100
100
50
0
0
50
100
150
Ts (oC)
200
0
10−2
10−1
1
10
IC (mA)
102
VCE = 6 V; Tj = 25 °C.
Fig.4
Fig.3 Power derating curve.
MRA672
0.6
DC current gain as a function of collector
current.
MRA673
12
handbook, halfpage
handbook, halfpage
Cre
(pF)
fT
(GHz)
0.4
8
VCE = 6 V
VCE = 3 V
0.2
4
0
0
4
8
VCB (V)
12
1
10
IC (mA)
102
f = 1 GHz; Tamb = 25 °C.
IC = 0; f = 1 MHz.
Fig.5
0
10−1
Feedback capacitance as a function of
collector-base voltage.
Fig.6
Rev. 04 - 23 November 2007
Transition frequency as a function of
collector current.
5 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
In Figs 7 to 10, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
MRA674
25
handbook, halfpage
gain
(dB)
gain
(dB)
Gmax
20
MSG
20
MRA675
25
handbook, halfpage
GUM
15
15
Gmax
MSG
GUM
10
10
5
5
0
0
0
0
10
20
IC (mA)
10
20
VCE = 6 V; f = 900 MHz; Tamb = 25 °C.
30
IC (mA)
30
VCE = 6 V; f = 2 GHz; Tamb = 25 °C.
Fig.7 Gain as a function of collector current.
Fig.8 Gain as a function of collector current.
MRA676
50
MRA677
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
GUM
40
40
GUM
MSG
30
30
MSG
20
20
Gmax
Gmax
10
0
10
102
103
f (MHz)
10
104
0
10
102
103
f (MHz)
104
IC = 20 mA; VCE = 6 V; Tamb = 25 °C.
IC = 5 mA; VCE = 6 V; Tamb = 25 °C.
Fig.9 Gain as a function of frequency.
Fig.10 Gain as a function of frequency.
Rev. 04 - 23 November 2007
6 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
MEA975
−20
dim
BFG520; BFG520/X; BFG520/XR
MEA974
−20
d2
handbook, halfpage
handbook, halfpage
(dB)
−30
(dB)
−30
−40
−40
−50
−50
−60
−60
−70
10
0
20
30
40
−70
50
IC (mA)
Fig.11 Intermodulation distortion as a function of
collector current.
MRA682
5
handbook, halfpage
Fmin
f = 900 MHz
(dB)
4
1000 MHz
10
0
20
30
40
50
IC (mA)
Fig.12 Second order intermodulation distortion as
a function of collector current.
MRA683
20
Gass
handbook, halfpage
(dB)
15
(dB)
4
5
Fmin
IC = 5 mA
20 mA
20
Gass
(dB)
15
Gass
Gass
2000 MHz
3
10
3
10
5
2
5
2000 MHz
2
1000 MHz
1
Fmin
20 mA
0
900 MHz
1
Fmin
0
5 mA
500 MHz
0
1
10
IC (mA)
−5
102
V CE = 6 V; Tamb = 25 °C.
0
102
103
f (MHz)
−5
104
VCE = 6 V; Tamb = 25 °C.
Fig.13 Minimum noise figure and associated
available gain as functions of collector
current.
Fig.14 Minimum noise figure and associated
available gain as functions of frequency.
Rev. 04 - 23 November 2007
7 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
handbook, full pagewidth
BFG520; BFG520/X; BFG520/XR
stability
circle
90°
1.0
1
135°
0.8
45°
2
0.5
pot. unst.
region
0.6
Fmin = 1. 1 dB
0.2
0.4
5
ΓOPT
180°
0.2
0
0.5
1
0.2
2
5
0°
F = 1.5 dB
0
F = 2 dB
5
0.2
F = 3 dB
0.5
−135°
2
−45°
1
MRA684
1.0
−90°
IC = 5 mA; VCE = 6 V;
f = 900 MHz; Zo = 50 Ω.
Fig.15 Noise circle figure.
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
F = 3 dB
F = 2.5 dB
F = 2 dB
ΓOPT
0.2
Gmax = 13 dB
180°
0
0.4
5
0.2
Fmin = 1. 9 dB
ΓMS 0.2
0.5
1
2
5
0°
0
G = 12 dB
0.2
G = 11 dB
5
G = 10 dB
−135°
0.5
2
−45°
1
MRA685
1.0
−90°
IC = 5 mA; VCE = 6 V;
f = 2 GHz; Zo = 50 Ω.
Fig.16 Noise circle figure.
Rev. 04 - 23 November 2007
8 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
3 GHz
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
0°
0
40 MHz
5
0.2
0.5
−135°
2
−45°
1
MRA678
1.0
−90°
IC = 20 mA; VCE = 6 V.
Zo = 50 Ω.
Fig.17 Common emitter input reflection coefficient (S11).
90°
handbook, full pagewidth
135°
45°
40 MHz
3 GHz
180°
50
40
30
20
0°
10
−135°
−45°
−90°
MRA679
IC = 20 mA; VCE = 6 V.
Fig.18 Common emitter forward transmission coefficient (S21).
Rev. 04 - 23 November 2007
9 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
90°
handbook, full pagewidth
135°
45°
3 GHz
40 MHz
180°
0.25
0.20
0.15
0.10
0°
0.05
−135°
−45°
−90°
MRA680
IC = 20 mA; VCE = 6 V.
Fig.19 Common emitter reverse transmission coefficient (S12).
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
0°
0
40 MHz
3 GHz
0.2
−135°
0.5
5
2
−45°
1
MRA681
1.0
−90°
IC = 20 mA; VCE = 6 V.
Zo = 50 Ω.
Fig.20 Common emitter output reflection coefficient (S22).
Rev. 04 - 23 November 2007
10 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
HE
v M A
e
bp
w M B
4
3
Q
A
A1
c
1
2
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
SOT143B
Rev. 04 - 23 November 2007
11 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
Plastic surface mounted package; reverse pinning; 4 leads
D
SOT143R
B
E
A
X
y
HE
v M A
e
bp
w M B
3
4
Q
A
A1
c
2
1
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.55
0.25
0.45
0.25
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-03-10
SOT143R
Rev. 04 - 23 November 2007
12 of 14
NXP Semiconductors
BFG520; BFG520/X; BFG520/XR
NPN 9 GHz wideband transistor
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
Rev. 04 - 23 November 2007
13 of 14
BFG520; BFG520/X; BFG520/XR
NXP Semiconductors
NPN 9 GHz wideband transistor
Revision history
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BFG520XR_N_4
20071123
Product data sheet
-
BFG520XR_CNV_3
•
Modifications:
Pinning table on page 2; changed code
BFG520XR_CNV_3
19950901
Product specification
-
BFG520XR_2
BFG520XR_2
-
Product specification
-
BFG520XR_1
BFG520XR_1
-
-
-
-
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 23 November 2007
Document identifier: BFG520XR_N_4
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