Data Sheet

BFG92A/X
NPN 5 GHz wideband transistor
Rev. 06 — 12 March 2008
Product data sheet
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NXP Semiconductors
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
FEATURES
DESCRIPTION
• High power gain
Silicon NPN transistor in a 4-pin,
dual-emitter SOT143B plastic
package.
• Low noise figure
• Gold metallization ensures
excellent reliability.
handbook, 2 columns
4
PINNING
APPLICATIONS
PIN
Wideband applications in the UHF
and microwave range.
3
1
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
2
Top view
MSB014
Marking code: %MW.
Fig.1 SOT143B.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
−
−
20
V
VCEO
collector-emitter voltage
−
−
15
V
IC
collector current (DC)
−
−
25
mA
Ptot
total power dissipation
Ts ≤ 60 °C
−
−
400
mW
Cre
feedback capacitance
IC = ic = 0; VCB = 10 V; f = 1 MHz
−
0.35
−
pF
fT
transition frequency
IC = 15 mA; VCE = 10 V; f = 500 MHz
3.5
5
−
GHz
GUM
maximum unilateral power
gain
IC = 15 mA; VCE = 10 V; Tamb = 25 °C;
f = 1 GHz
−
16
−
dB
IC = 15 mA; VCE = 10 V; Tamb = 25 °C;
f = 2 GHz
−
11
−
dB
Γs = Γopt; IC = 5 mA; VCE = 10 V;
Tamb = 25 °C; f = 1 GHz
−
2
−
dB
F
noise figure
Rev. 06 - 12 March 2008
2 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
2
V
IC
collector current (DC)
−
25
mA
Ptot
total power dissipation
Ts ≤ 60 °C; note 1
−
400
mW
Tstg
storage temperature range
−65
150
°C
Tj
junction temperature
−
175
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
note 1
VALUE
UNIT
290
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector leakage current
IE = 0; VCB = 10 V
−
−
50
hFE
DC current gain
IC = 15 mA; VCE = 10 V
65
90
135
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
0.6
−
pF
nA
Ce
emitter capacitance
IC = ic = 0; VEB = 10 V; f = 1 MHz
−
0.9
−
pF
Cre
feedback capacitance
IC = ic = 0; VCB = 10 V; f = 1 MHz
−
0.35
−
pF
fT
transition frequency
IC = 15 mA; VCE = 10 V; f = 500 MHz
3.5
5
−
GHz
GUM
maximum unilateral power
gain; note 1
IC = 15 mA; VCE = 10 V;
Tamb = 25 °C; f = 1 GHz
−
16
−
dB
IC = 15 mA; VCE = 10 V;
Tamb = 25 °C; f = 2 GHz
−
11
−
dB
Γs = Γopt; IC = 5 mA; VCE = 10 V;
Tamb = 25 °C; f = 1 GHz
−
2
−
dB
Γs = Γopt; IC = 5 mA; VCE = 10 V;
Tamb = 25 °C; f = 2 GHz
−
3
−
dB
F
noise figure
Note
S 21 2
dB.
1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------( 1 – S 11 2 ) ( 1 – S 22 2 )
Rev. 06 - 12 March 2008
3 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
MBB963 - 1
800
MCD074
120
handbook, halfpage
handbook, halfpage
P
tot
(mW)
h FE
600
80
400
40
200
0
0
0
50
100
150
200
0
10
20
Ts ( o C)
I C (mA)
30
VCE = 10 V.
Fig.3
DC current gain as a function of collector
current; typical values.
Fig.2 Power derating curve.
MBB275
MCD075
handbook,0.6
halfpage
6
handbook, halfpage
fT
(GHz)
C re
(pF)
0.4
4
0.2
2
0
0
0
6
12
18
0
24
10
VCB (V)
I C (mA)
30
VCE = 10 V; Tamb = 25 °C; f = 500 MHz.
IC = ic = 0; f = 1 MHz.
Fig.4
20
Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5
Rev. 06 - 12 March 2008
Transition frequency as a function of
collector current; typical values.
4 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
MCD077
30
MCD078
30
handbook, halfpage
handbook, halfpage
MSG
gain
gain
(dB)
(dB)
MSG
G UM
20
20
G UM
10
10
0
0
5
10
0
20
25
I C (mA)
15
0
5
VCE = 10 V; f = 500 MHz.
VCE = 10 V; f = 1 GHz.
Fig.6
Fig.7
Gain as a function of collector current;
typical values.
MCD079
50
10
25
20
I C (mA)
15
Gain as a function of collector current;
typical values.
MCD080
50
handbook, halfpage
handbook, halfpage
gain
gain
(dB)
(dB)
40
G UM
40
G UM
MSG
30
30
MSG
20
20
G max
G max
10
10
0
10
10
2
10
3
f
(MHz)
10
4
0
10
10
VCE = 10 V; IC = 5 mA.
VCE = 10 V; IC = 15 mA.
Fig.8
Fig.9
Gain as a function of frequency; typical
values.
Rev. 06 - 12 March 2008
2
10
3
f (MHz)
10
4
Gain as a function of frequency; typical
values.
5 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
MCD081
4
MCD082
4
handbook, halfpage
handbook, halfpage
f = 2 GHz
F
(dB)
I C = 15 mA
F
(dB)
3
10 mA
3
5 mA
1 GHz
500 MHz
2
2
1
1
0
1
10
I C (mA)
0
10 2
10 2
10 3
f (MHz)
10 4
VCE = 10 V.
VCE = 10 V.
Fig.10 Minimum noise figure as a function of
collector current; typical values.
Fig.11 Minimum noise figure as a function of
frequency; typical values.
stability circle
1
handbook, full pagewidth
0.5
un
re sta
gio bl
n e
2
0.2
5
OPT
10
*
+
j
F min = 1.6 dB
0
–j
MSG
23.9 dB
0.2
0.5
1
2
5
∞
10
10
2 dB
5
0.2
3 dB
4 dB
2
0.5
Zo = 50 Ω.
Maximum stable gain = 23.9 dB.
1
MCD083
Fig.12 Common emitter noise figure circles; typical values.
Rev. 06 - 12 March 2008
6 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
1
handbook, full pagewidth
0.5
2
unsta
ble re
gion
stability circle
0.2
5
OPT
10
*
+j
F min = 2.1 dB
0
MSG 0.2
19.9 dB
–j
1
0.5
2
5
∞
10
10
2.5 dB
3 dB
0.2
5
4 dB
2
0.5
1
MCD084
Zo = 50 Ω.
Maximum stable gain = 19.9 dB.
Fig.13 Common emitter noise figure circles; typical values.
1
handbook, full pagewidth
0.5
2
5 dB
4 dB
0.2
5
3.5 dB
OPT
10
*
+j
F min = 3 dB
0
0.2
Gmax
–j
0.5
1
2
5
∞
10
10
*
12.5 dB
0.2
12 dB
5
10 dB
2
0.5
1
MCD085
Zo = 50 Ω.
Fig.14 Common emitter noise figure circles; typical values.
Rev. 06 - 12 March 2008
7 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
1
handbook, full pagewidth
0.5
2
3 GHz
0.2
5
10
+
j
0.2
0
0.5
1
2
5
10
∞
40 MHz
–j
10
5
0.2
2
0.5
1
MCD086
VCE = 10 V; IC = 15 mA.
Fig.15 Common emitter input reflection coefficient (S11); typical values.
90 o
handbook, full pagewidth
45 o
135 o
180 o
40 MHz
50
40
30
20
10
_ 45 o
_ 135 o
VCE = 10 V; IC = 15 mA.
0o
3 GHz
_ 90 o
MCD072
Fig.16 Common emitter forward transmission coefficient (S21); typical values.
Rev. 06 - 12 March 2008
8 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
90 o
handbook, full pagewidth
45 o
135 o
3 GHz
40
MHz
180 o
0.04
0.08
0.12
0.16
0.20
0o
_ 45 o
_ 135 o
_ 90 o
VCE = 10 V; IC = 15 mA.
MCD071
Fig.17 Common emitter reverse transmission coefficient (S12); typical values.
1
handbook, full pagewidth
0.5
2
0.2
5
10
+j
0
0.2
0.5
1
2
5
–j
10
∞
40 MHz
0.2
10
5
3 GHz
2
0.5
1
MCD073
VCE = 10 V; IC = 15 mA.
Fig.18 Common emitter output reflection coefficient (S22); typical values.
Rev. 06 - 12 March 2008
9 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
SPICE parameters for BFR90A/X die
SEQUENCE No.
PARAMETER
BFG92A/X
SEQUENCE No.
VALUE
UNIT
PARAMETER
36 (note 1)
VJS
VALUE
UNIT
750.0
mV
1
IS
411.8
aA
37 (note 1)
MJS
0.000
−
2
BF
102.6
−
38
FC
850.0
m
3
NF
997.2
m
Note
4
VAF
62.67
V
5
IKF
3.200
A
1. These parameters have not been extracted,
the default values are shown.
6
ISE
4.010
fA
7
NE
1.577
−
8
BR
18.10
−
9
NR
996.2
m
10
VAR
3.369
V
11
IKR
1.281
A
12
ISC
279.9
aA
13
NC
1.075
−
14
RB
10.00
Ω
15
IRB
1.000
µA
16
RBM
10.00
Ω
17
RE
1.164
Ω
18
RC
2.320
Ω
19 (note 1)
XTB
0.000
−
20 (note 1)
EG
1.110
eV
21 (note 1)
XTI
3.000
−
22
CJE
890.5
fF
23
VJE
600.0
mV
24
MJE
258.5
m
25
TF
15.49
ps
26
XTF
39.14
−
27
VTF
2.152
V
28
ITF
213.7
mA
Cbe
84
fF
29
PTF
0.000
deg
Ccb
17
fF
30
CJC
546.5
fF
Cce
191
fF
31
VJC
380.8
mV
L1
0.12
nH
32
MJC
202.9
m
L2
0.21
nH
33
XCJC
150.0
m
L3
0.06
nH
34
TR
5.618
ns
LB
0.95
nH
35 (note 1)
CJS
0.000
F
LE
0.40
nH
C cb
handbook, halfpage
L1
LB
B
L2
B'
C'
C
E'
C be
Cce
LE
MBC964
L3
E
QLB = 50; QLE = 50.
QLB,E (f) = QLB,E √ (f/fc).
fc = scaling frequency = 100 MHz.
Fig.19 Package equivalent circuit SOT143B.
List of components (see Fig.19)
DESIGNATION
Rev. 06 - 12 March 2008
VALUE
UNIT
10 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
HE
v M A
e
bp
w M B
4
3
Q
A
A1
c
1
2
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
SOT143B
Rev. 06 - 12 March 2008
11 of 13
BFG92A/X
NXP Semiconductors
NPN 5 GHz wideband transistor
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Rev. 06 - 12 March 2008
12 of 13
BFG92A/X
NXP Semiconductors
NPN 5 GHz wideband transistor
Revision history
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BFG92AX_N_6
20080312
Product data sheet
-
BFG92AX_N_5
•
Modifications:
Characteristics Table; DC current gain value changed
BFG92AX_N_5
20071126
Product data sheet
-
BFG92AX_4
BFG92AX_4
(9397 750 04344)
19980923
Product specification
-
BFG92SERIES_3
BFG92SERIES_3
19950912
Product specification
-
BFG92SERIES_2
BFG92SERIES_2
19921101
Product specification
-
BFG92_SERIES_1
BFG92_SERIES_1
-
-
-
-
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 12 March 2008
Document identifier: BFG92AX_N_6
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