Data Sheet

BFG93A; BFG93A/X
NPN 6 GHz wideband transistors
Rev. 05 — 26 November 2007
Product data sheet
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NXP Semiconductors
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistors
FEATURES
BFG93A; BFG93A/X
PINNING
• High power gain
PIN
• Low noise figure
• Gold metallization ensures
excellent reliability.
APPLICATIONS
Wideband applications in the UHF
and microwave range.
DESCRIPTION
NPN transistor in a 4-pin, dual-emitter
SOT143B plastic package.
DESCRIPTION
handbook, 2 columns
4
3
BFG93A
1
collector
2
base
3
emitter
4
emitter
1
2
Top view
BFG93A/X
MSB014
Fig.1 SOT143B.
1
collector
2
emitter
3
base
4
emitter
MARKING
TYPE NUMBER
CODE
BFG93A
R8%
BFG93A/X
%MX
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−
15
V
VCEO
collector-emitter voltage
open base
−
−
12
V
IC
collector current (DC)
−
−
35
mA
Ptot
total power dissipation
Ts ≤ 85 °C
−
−
300
mW
Cre
feedback capacitance
IC = ic = 0; VCB = 5 V; f = 1 MHz
−
0.6
−
pF
fT
transition frequency
IC = 30 mA; VCE = 5 V; f = 500 MHz
4.5
6
−
GHz
GUM
maximum unilateral
power gain
IC = 30 mA; VCE = 8 V; Tamb = 25 °C;
f = 1 GHz
−
16
−
dB
IC = 30 mA; VCE = 8 V; Tamb = 25 °C;
f = 2 GHz
−
10
−
dB
Γs = Γopt; IC = 5 mA; VCE = 8 V;
Tamb = 25 °C; f = 1 GHz
−
1.7
−
dB
F
noise figure
Rev. 05 - 26 November 2007
2 of 13
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
15
V
VCEO
collector-emitter voltage
open base
−
12
V
VEBO
emitter-base voltage
open collector
−
2
V
IC
collector current (DC)
−
35
mA
Ptot
total power dissipation
Ts ≤ 85 °C; note 1
−
300
mW
Tstg
storage temperature range
−65
+150
°C
Tj
junction operating temperature
−
175
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
note 1
VALUE
UNIT
290
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector leakage current
IE = 0; VCB = 5 V
−
−
50
hFE
DC current gain
IC = 30 mA; VCE = 5 V
40
90
−
Cc
collector capacitance
IE = ie = 0; VCB = 5 V; f = 1 MHz
−
0.9
−
pF
nA
Ce
emitter capacitance
IC = ic = 0; VEB = 5 V; f = 1 MHz
−
1.9
−
pF
Cre
feedback capacitance
IC = ic = 0; VCB = 5 V; f = 1 MHz
−
0.6
−
pF
fT
transition frequency
IC = 30 mA; VCE = 5 V; f = 500 MHz
4.5
6
−
GHz
GUM
maximum unilateral power
gain; note 1
IC = 30 mA; VCE = 8 V; Tamb = 25 °C;
f = 1 GHz
−
16
−
dB
IC = 30 mA; VCE = 8 V; Tamb = 25 °C;
f = 2 GHz
−
10
−
dB
Γs = Γopt; IC = 5 mA; VCE = 8 V;
Tamb = 25 °C; f = 1 GHz
−
1.7
−
dB
Γs = Γopt; IC = 5 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
−
2.3
−
dB
F
noise figure
Note
S 21 2
dB.
1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------( 1 – S 11 2 ) ( 1 – S 22 2 )
Rev. 05 - 26 November 2007
3 of 13
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistors
MBG245
400
handbook,
halfpage
BFG93A; BFG93A/X
MCD087
120
handbook, halfpage
P
tot
(mW)
h FE
300
80
200
40
100
0
0
0
50
100
150
0
200
10
20
Ts ( o C)
30
IC (mA)
VCE = 5 V.
Fig.3
Fig.2 Power derating curve.
MCD088
1.0
handbook, halfpage
DC current gain as a function of collector
current; typical values.
MCD089
8
handbook, halfpage
C re
fT
(GHz)
(pF)
0.8
6
0.6
4
0.4
2
0.2
0
0
0
4
8
12
16
0
10
20
40
VCE = 5 V; Tamb = 25 °C; f = 500 MHz.
IC = ic = 0; f = 1 MHz.
Fig.4
30
I C (mA)
VCB (V)
Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5
Rev. 05 - 26 November 2007
Transition frequency as a function of
collector current; typical values.
4 of 13
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
MCD090
30
MCD091
30
handbook, halfpage
handbook, halfpage
gain
gain
MSG
(dB)
(dB)
G UM
20
MSG
20
G UM
10
10
0
0
10
20
30
0
40
0
10
20
30
I C (mA)
VCE = 8 V; f = 500 MHz.
VCE = 8 V; f = 1 GHz.
Fig.6
Fig.7
Gain as a function of collector current;
typical values.
MCD092
50
40
I C (mA)
Gain as a function of collector current;
typical values.
MCD093
50
handbook, halfpage
handbook, halfpage
gain
gain
(dB)
(dB)
G UM
40
40
G UM
MSG
30
30
MSG
20
20
G max
G max
10
0
10
10
2
10
3
f
(MHz)
10
10
4
0
10
10
VCE = 8 V; IC = 10 mA.
VCE = 8 V; IC = 30 mA.
Fig.8
Fig.9
Gain as a function of frequency; typical
values.
Rev. 05 - 26 November 2007
2
10
3
f (MHz)
10
4
Gain as a function of frequency; typical
values.
5 of 13
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
MCD094
4
MCD095
4
handbook, halfpage
handbook, halfpage
F
(dB)
F
(dB)
f = 2 GHz
3
3
1 GHz
500 MHz
2
2
1
1
0
1
10
10 mA
5 mA
0
10 2
10 2
I C (mA)
I C = 30 mA
10 3
f (MHz)
10 4
VCE = 8 V.
VCE = 8 V.
Fig.10 Minimum noise figure as a function of
collector current; typical values.
Fig.11 Minimum noise figure as a function of
frequency; typical values.
stability
circle
1
handbook, full pagewidth
0.5
un
re sta
gio ble
n
2
0.2
5
OPT
–j
10
*
+j
F min = 1.4 dB
MSG 0.2
22.2 dB
0.5
1
2
5
∞
10
10
2 dB
5
0.2
3 dB
4 dB
2
0.5
Zo = 50 Ω.
Maximum stable gain = 22.2 dB.
1
MCD096
Fig.12 Common emitter noise figure circles; typical values.
Rev. 05 - 26 November 2007
6 of 13
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
1
handbook, full pagewidth
0.5
2
stability
circle
0.2
5
unstable
region
OPT
*
10
F min = 2 dB
+j
0
MSG 0.2
10.4 dB
–j
1
0.5
2
5
∞
10
2.5 dB
10
5
0.2
4 dB
6 dB
2
0.5
MCD097
1
Zo = 50 Ω.
Maximum stable gain = 10.4 dB.
Fig.13 Common emitter noise figure circles; typical values.
1
handbook, full pagewidth
0.5
2
5 dB
0.2
5
4 dB
3.5 dB
10
+j
OPT
0.2
–j
0.2
*
0.5
F min = 3 dB
1
2
5
∞
10
10
*
G max = 9 dB
5
8 dB
7 dB
2
0.5
1
MCD098
Zo = 50 Ω.
Fig.14 Common emitter noise figure circles; typical values.
Rev. 05 - 26 November 2007
7 of 13
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
1
handbook, full pagewidth
0.5
2
3 GHz
0.2
5
10
+j
0.2
0
0.5
1
2
5
10
∞
–j
10
40 MHz
5
0.2
2
0.5
1
MCD099
VCE = 8 V; IC = 30 mA; Zo = 50 Ω.
Fig.15 Common emitter input reflection coefficient (S11).
90 o
handbook, full pagewidth
45 o
135 o
40 MHz
180 o
50
40
20
10
0o
3 GHz
_
VCE = 8 V; IC = 30 mA; Rmax = 50 Ω.
30
_ 45 o
135 o
_ 90 o
MCD100
Fig.16 Common emitter forward transmission coefficient (S21).
Rev. 05 - 26 November 2007
8 of 13
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
90 o
handbook, full pagewidth
135 o
45 o
3 GHz
40 MHz
180 o
0.04
0.08
0.12
0.16
0.20
0o
_ 45 o
_ 135 o
_ 90 o
VCE = 8 V; IC = 30 mA; Rmax = 0.2 Ω.
MCD102
Fig.17 Common emitter reverse transmission coefficient (S12).
1
handbook, full pagewidth
0.5
2
0.2
5
10
+j
0
0.2
0.5
1
2
5
10
∞
–j
10
40 MHz
3 GHz
5
0.2
2
0.5
1
MCD101
VCE = 10 V; IC = 15 mA; Zo = 50 Ω.
Fig.18 Common emitter output reflection coefficient (S22).
Rev. 05 - 26 November 2007
9 of 13
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
SPICE parameters for BFR91A(/X) die
SEQUENCE No.
PARAMETER
VALUE
UNIT
SEQUENCE No.
PARAMETER
VALUE
UNIT
1
IS
1.328
fA
36 (note 1)
VJS
750.0
mV
2
BF
102.0
−
37 (note 1)
MJS
0.000
−
3
NF
1.000
−
38
FC
800.0
m
4
VAF
51.90
V
Note
5
IKF
8.155
A
6
ISE
13.90
fA
1. These parameters have not been extracted,
the default values are shown.
7
NE
15.12
−
8
BR
17.69
−
9
NR
994.0
m
10
VAR
3.280
V
11
IKR
10.00
A
12
ISC
1.043
aA
13
NC
1.189
−
14
RB
10.00
Ω
15
IRB
1.000
µA
16
RBM
10.00
Ω
17
RE
763.6
mΩ
18
RC
9.000
Ω
19 (note 1)
XTB
0.000
−
20 (note 1)
EG
1.110
EV
21 (note 1)
XTI
3.000
−
22
CJE
2.032
pF
23
VJE
600.0
mV
24
MJE
290.0
m
25
TF
6.557
ps
26
XTF
38.97
−
27
VTF
10.93
V
28
ITF
521.0
mA
Cbe
84
fF
29
PTF
0.000
deg
Ccb
17
fF
30
CJC
1.003
pF
Cce
191
fF
31
VJC
340.8
mV
L1
0.12
nH
32
MJC
194.2
m
L2
0.21
nH
33
XCJC
120.0
m
L3
0.06
nH
34
TR
3.073
ns
LB
0.95
nH
35 (note 1)
CJS
0.000
F
LE
0.40
nH
C cb
handbook, halfpage
L1
LB
B
L2
B'
C'
C
E'
C be
Cce
LE
MBC964
L3
E
QLB = 50; QLE = 50.
QLB,E (f) = QLB,E √ (f/fc).
fc = scaling frequency = 1000 MHz.
Fig.19 Package equivalent circuit SOT143B.
List of components (see Fig.19)
DESIGNATION
Rev. 05 - 26 November 2007
VALUE
UNIT
10 of 13
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
HE
v M A
e
bp
w M B
4
3
Q
A
A1
c
1
2
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
SOT143B
Rev. 05 - 26 November 2007
11 of 13
BFG93A; BFG93A/X
NXP Semiconductors
NPN 6 GHz wideband transistors
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
Rev. 05 - 26 November 2007
12 of 13
BFG93A; BFG93A/X
NXP Semiconductors
NPN 6 GHz wideband transistors
Revision history
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BFG93A_X_N_5
20071126
Product data sheet
-
BFG93A_X_4
•
Modifications:
Marking table on page 2; changed code
BFG93A_X_4
(9397 750 04351)
19980923
Product specification
-
BFG93SERIES_3
BFG93SERIES_3
19950925
Product specification
-
BFG93SERIES_2
BFG93SERIES_2
-
Product specification
-
BFG93_SERIES_1
BFG93_SERIES_1
-
-
-
-
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 26 November 2007
Document identifier: BFG93A_X_N_5
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