DISCRETE SEMICONDUCTORS DATA SHEET BFG97 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope. It features excellent output voltage capabilities, and is primarily intended for use in MATV applications. PIN DESCRIPTION 1 emitter 2 base 3 emitter 4 collector 4 age PNP complement is the BFG31. 1 2 3 Top view MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter 20 V VCEO collector-emitter voltage open base 15 V IC DC collector current 100 mA W Ptot total power dissipation up to Ts = 125 C (note 1) 1 hFE DC current gain IC = 70 mA; VCE = 10 V; Tj = 25 C 25 80 fT transition frequency IC = 70 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C 5.5 GHz GUM maximum unilateral power gain IC = 70 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C 16 dB IC = 70 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 C 12 dB IC = 70 mA; VCE = 10 V; dim = 60 dB; RL = 75 ; f(pqr) = 793.25 MHz; Tamb = 25 C 700 mV MAX. UNIT Vo output voltage LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VCBO collector-base voltage open emitter 20 V VCEO collector-emitter voltage open base 15 V VEBO emitter-base voltage open collector 3 V IC DC collector current 100 mA Ptot total power dissipation 1 W Tstg storage temperature 65 150 C Tj junction temperature 175 C up to Ts = 125 C (note 1) Note 1. Ts is the temperature at the soldering point of the collector tab. September 1995 2 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 THERMAL RESISTANCE SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point THERMAL RESISTANCE up to Ts = 125 C (note 1) 50 K/W Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 10 V 100 hFE DC current gain IC = 70 mA; VCE = 10 V 25 80 fT transition frequency IC = 70 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C 5.5 GHz nA Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz 1.5 pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz 6.5 pF Cre feedback capacitance IC = 0; VCE = 10 V; f = 1 MHz 1 pF GUM maximum unilateral power gain (note 1) IC = 70 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C 16 dB IC = 70 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 C 12 dB note 2 750 mV note 3 700 mV note 4 56 dB note 5 53 dB Vo output voltage d2 second order intermodulation distortion Notes 1. GUM is the maximum unilateral power gain, assuming S12 is zero and 2 S 21 - dB. G UM = 10 log --------------------------------------------------------2 2 1 – S 11 1 – S 22 2. dim = 60 dB (DIN 45004B); IC = 70 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C Vp = Vo at dim = 60 dB; Vq = Vo 6 dB; fp = 445.25 MHz; Vr = Vo 6 dB; fq = 453.25 MHz; fr = 455.25 MHz; measured at f(pqr) = 443.25 MHz. 3. dim = 60 dB (DIN 45004B); IC = 70 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C Vp = Vo at dim = 60 dB; Vq = Vo 6 dB; fp = 795.25 MHz; Vr = Vo 6 dB; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(pqr) = 793.25 MHz. 4. IC = 70 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C; Vp = Vq = Vo = 50 dBmV; f(pq) = 450 MHz; fp = 50 MHz; fq = 400 MHz. 5. IC = 70 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C; Vp = Vq = Vo = 50 dBmV; f(pq) = 810 MHz; fp = 250 MHz; fq = 560 MHz. September 1995 3 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 ;;;; VCC handbook, full pagewidth L2 VBB C4 R1 C1 L4 L6 L5 C3 input 75 Ω C7 L1 C8 R2 output 75 Ω L3 DUT C5 C2 C6 R3 R4 MBB807 Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit. List of components (see test circuit) DESIGNATION DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C2, C3, C7, C8 multilayer ceramic capacitor 10 nF 2222 590 08627 C1, C4, C6 multilayer ceramic capacitor 1.2 pF 2222 851 12128 C5 (note 1) miniature ceramic plate capacitor 10 nF 2222 629 08103 L1 (note 1) 0.5 turns 0.4 mm copper wire L2 microstripline 75 length 14 mm; width 2.5 mm L3 microstripline 75 length 8 mm; width 2.5 mm L4, L5 (note 1) 1.5 turns 0.4 mm copper wire int. dia. 3 mm int. dia. 3 mm; winding pitch 1 mm L6 microstripline 75 L7 Ferroxcube choke 5 H 3122 108 20153 R1 metal film resistor 10 k 2322 180 73103 R2 (note 1) metal film resistor 220 2322 180 73221 R3, R4 metal film resistor 30 2322 180 73309 length 19 mm; width 2.5 mm Notes The circuit has been built on a double copper-clad printed circuit board with PTFE dielectric (r = 2.2); thickness 116 inch; thickness of copper sheet 2 35 m. 1. Components C5, L1, L4, L5, and R2 are mounted on the underside of the PCB. September 1995 4 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 handbook, full pagewidth VBB VCC C3 C7 R1 C2 75 Ω input L1 C1 L7 R3 C8 L5 L2 L3 L6 C4 75 Ω output C6 R4 C5 R2 L4 MEA971 80 mm handbook, full pagewidth 60 mm MEA969 80 mm handbook, full pagewidth 60 mm mounting screws M 2.5 (8x) MEA970 Fig.3 Intermodulation distortion and second order intermodulation distortion printed circuit board. September 1995 5 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 MBB797 MBB774 1.2 120 handbook, halfpage P handbook, halfpage tot (W) h FE 1.0 0.8 80 0.6 0.4 40 0.2 0 0 0 50 100 150 200 T s ( o C) 0 40 80 120 I C (mA) VCE = 10 V; Tj = 25 C. Fig.4 Power derating curve. Fig.5 MBB798 3 DC current gain as a function of collector current. MBB773 8 handbook, halfpage handbook, halfpage fT C re (GHz) (pF) 6 2 4 1 2 0 0 0 10 VCE (V) 20 0 40 IE = 0; f = 1 MHz; Tj = 25 C. VCE = 10 V; f = 500 MHz; Tj = 25 C. Fig.6 Fig.7 Feedback capacitance as a function of collector-emitter voltage. September 1995 6 80 I C (mA) 120 Transition frequency as a function of collector current. NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 MBB799 45 handbook, halfpage d im (dB) d im (dB) 50 50 55 55 60 60 65 65 70 20 MBB796 45 handbook, halfpage 40 60 80 70 20 100 120 I C (mA) 40 60 80 VCE = 10 V; Vo = 750 mV; f(pqr) = 443.25 MHz; Tamb = 25 C. VCE = 10 V; Vo = 700 mV; f(pqr) = 793.25 MHz; Tamb = 25 C. Fig.8 Fig.9 Intermodulation distortion as a function of collector current. MBB800 45 MBB801 handbook, halfpage d2 (dB) d2 (dB) 50 50 55 55 60 60 65 65 70 20 Intermodulation distortion as a function of collector current. 45 handbook, halfpage 100 120 I C (mA) 40 60 80 70 20 100 120 I C (mA) VCE = 10 V; Vo = 50 dBmV; f(pq) = 450 MHz; Tamb = 25 C. 60 80 100 120 I C (mA) VCE = 10 V; Vo = 50 dBmV; f(pq) = 810 MHz; Tamb = 25 C. Fig.10 Second order intermodulation distortion as a function of collector current. September 1995 40 Fig.11 Second order intermodulation distortion as a function of collector current. 7 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 MEA963 60 L (Ω) MEA964 60 handbook, Z halfpage handbook, Z halfpage L (Ω) 50 50 RL RL 40 40 30 30 20 20 10 10 0 0 –10 XL –20 0 0.25 0.50 0.75 –10 1 POUT (W) XL 0 0.25 0.50 0.75 1 POUT (W) VCE = 6 V; f = 900 MHz. VCE = 7.5 V; f = 900 MHz. Fig.12 Load impedance as a function of output power. Fig.13 Load impedance as a function of output power. MEA965 60 handbook, Z halfpage L (Ω) RL 50 40 30 20 10 0 –10 XL 0 0.25 0.50 0.75 1 POUT (W) VCE = 10 V; f = 900 MHz. Fig.14 Load impedance as a function of output power. September 1995 8 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 MEA957 MEA958 20 20 handbook, halfpage handbook, halfpage Zi (Ω) Zi (Ω) 15 15 xi 10 10 ri ri xi 5 5 0 0 –5 0 0.25 0.50 0.75 –5 1 POUT (W) 0 0.25 0.50 0.75 1 POUT (W) VCE = 6 V; f = 900 MHz. VCE = 7.5 V; f = 900 MHz. Fig.15 Input impedance as a function of output power. Fig.16 Input impedance as a function of output power. MEA959 20 handbook, halfpage Zi (Ω) 15 ri 10 xi 5 0 5 –10 0 0.25 0.50 0.75 1 POUT (W) VCE = 10 V; f = 900 MHz. Fig.17 Input impedance as a function of output power. September 1995 9 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 MEA961 MEA962 80 1.5 handbook, halfpage handbook, halfpage η (%) P OUT (W) 70 V CE = 10 V 1 V 60 CE = 6V 7.5 V 6V 7.5 V 0.5 10 V 50 40 0 0.5 1 0 POUT (W) 1.5 0 100 200 300 P IN (mW) f = 900 MHz. f = 900 MHz. Fig.18 Efficiency as a function of output power. Fig.19 Output power as a function of input power. MEA960 MBB802 10 50 handbook, halfpage handbook, halfpage G UM Gp (dB) (dB) 40 8 V CE = 10 V 6 30 7.5 V 20 4 6V 10 2 0 0 0 0.5 1 POUT (W) 1.5 10 2 103 f (MHz) 10 IC = 70 mA; VCE = 10 V; Tamb = 25 C. f = 900 MHz. Fig.20 Power gain as a function of output power. September 1995 10 Fig.21 Maximum unilateral power gain as a function of frequency. 10 4 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 50 handbook, full pagewidth 25 100 40 MHz 10 250 +j 10 0 25 50 100 250 –j 250 2 GHz 10 100 25 MBB803 50 IC = 70 mA; VCE = 10 V; Tamb = 25 C. Zo = 50 . Fig.22 Common emitter input reflection coefficient (S11). 90 o handbook, full pagewidth 60 o 120 o 150 o 30 o 2 GHz ϕ 180 o 100 80 60 40 20 0o 40 MHz ϕ 30 o 150 o 60 o 120 o 90 o MBB806 IC = 70 mA; VCE = 10 V; Tamb = 25 C. Fig.23 Common emitter forward transmission coefficient (S21). September 1995 11 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 90 o handbook, full pagewidth 60 o 120 o 150 o 30 o 2 GHz ϕ 180 o 0.5 0.4 0.3 0.2 0.1 0o 40 MHz ϕ 30 o 150 o 60 o 120 o 90 o MBB805 IC = 70 mA; VCE = 10 V; Tamb = 25 C. Fig.24 Common emitter reverse transmission coefficient (S12). 50 handbook, full pagewidth 25 100 10 250 2 GHz +j 0 10 25 50 100 250 –j 250 10 40 MHz 100 25 IC = 70 mA; VCE = 10 V; Tamb = 25 C. Zo = 50 . 50 MBB804 Fig.25 Common emitter output reflection coefficient (S22). September 1995 12 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 PACKAGE OUTLINE Plastic surface-mounted package with increased heatsink; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION SOT223 September 1995 REFERENCES IEC JEDEC JEITA SC-73 13 EUROPEAN PROJECTION ISSUE DATE 04-11-10 06-03-16 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. DEFINITIONS Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. 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Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. September 1995 14 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). 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Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2010 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/02/pp16 Date of release: September 1995