Data Sheet

BFQ18A
NPN 4 GHz wideband transistor
Rev. 03 — 28 September 2007
Product data sheet
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
[email protected] use [email protected]
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with:
- © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via [email protected]). Thank you for your
cooperation and understanding,
NXP Semiconductors
NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
DESCRIPTION
BFQ18A
PINNING
NPN transistor in a plastic SOT89
envelope intended for application in
thick and thin-film circuits. It is
primarily intended for MATV
purposes.
PIN
DESCRIPTION
Code: FF
1
emitter
2
collector
3
base
3
2
1
Fig.1 SOT89.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP. MAX. UNIT
VCBO
collector-base voltage
open emitter
−
25
V
VCEO
collector-emitter voltage
open base
−
18
V
IC
DC collector current
−
150
mA
Ptot
total power dissipation
up to Ts = 155 °C (note 1)
−
1
W
fT
transition frequency
IC = 100 mA; VCE = 10 V; f = 500 MHz;
Tj = 25 °C
4
−
GHz
Cre
feedback capacitance
IC = 0; VCE = 10 V; f = 10.7 MHz
1.2
−
pF
dim
intermodulation distortion
IC = 80 mA; VCE = 10 V; RL = 75 Ω;
Vo = 700 mV; measured at
f(p+q-r) = 793.25 MHz
−
−60
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
25
V
VCEO
collector-emitter voltage
open base
−
18
V
VEBO
emitter-base voltage
open collector
−
2
V
IC
DC collector current
−
150
mA
Ptot
total power dissipation
−
1
W
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
175
°C
up to Ts = 155 °C (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
Rev. 03 - 28 September 2007
2 of 7
NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ18A
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to
soldering point
THERMAL RESISTANCE
up to Ts = 155 °C (note 1)
20 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
hFE
DC current gain
IC = 100 mA; VCE = 10 V
MIN.
25
TYP.
UNIT
−
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
2
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
11
pF
Cre
feedback capacitance
IC = 0; VCE = 10 V; f = 10.7 MHz
−
1.2
pF
fT
transition frequency
IC = 100 mA; VCE = 10 V; f = 500 MHz
−
4
GHz
dim
intermodulation distortion (see Fig.2)
note 1
−
−60
dB
Note
1. Ic = 80 mA; VCE = 10 V; RL = 75 Ω;
Vp = Vo = 700 mV; fp =795.25 MHz;
Vq = Vo −6 dB; fq = 803.25 MHz;
Vr = Vo −6 dB; fr = 805.25 MHz;
measured at f(p+q-r) = 793.25 MHz.
Rev. 03 - 28 September 2007
3 of 7
NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ18A
MBB361
120
handbook, halfpage
5 µH
handbook, halfpage
1.5 nF
VBB
200 Ω
5 µH
10 kΩ
10 nF
VCC
2.2 nF
h FE
80
10 nF
L1
4.7 nF
DUT
2.2 nF
0.68
pF
0.68 pF
RL
40
12 Ω
MBB829
0
0
40
f = 40 − 860 MHz.
VCE = 10 V; Tj = 25 °C.
Fig.2 Intermodulation distortion MATV test circuit.
Fig.3
80
120
160
I C (mA)
DC current gain as a function of collector
current.
MBB357
8
handbook, halfpage
fT
(GHz)
6
4
2
0
0
40
80
120
160
I C (mA)
VCE = 10 V; f = 500 MHz; Tj = 25 °C.
Fig.4
Transition frequency as a function of
collector current.
Rev. 03 - 28 September 2007
4 of 7
NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ18A
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
D
A
bp3
E
HE
Lp
1
2
3
c
bp2
w M B
bp1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp1
bp2
bp3
c
D
E
e
e1
HE
Lp
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
1.2
0.8
0.13
OUTLINE
VERSION
SOT89
REFERENCES
IEC
JEDEC
JEITA
TO-243
SC-62
Rev. 03 - 28 September 2007
EUROPEAN
PROJECTION
ISSUE DATE
06-03-16
06-08-29
5 of 7
BFQ18A
NXP Semiconductors
NPN 4 GHz wideband transistor
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
Rev. 03 - 28 September 2007
6 of 7
BFQ18A
NXP Semiconductors
NPN 4 GHz wideband transistor
Revision history
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BFQ18A_N_3
20070928
Product data sheet
-
BFQ18A_CNV_2
-
-
Modifications:
BFQ18A_CNV_2
•
Fig. 1 and package outline updated
19950901
Product specification
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 28 September 2007
Document identifier: BFQ18A_N_3
Similar pages