Data Sheet

BFQ19
NPN 5 GHz wideband transistor
Rev. 03 — 28 September 2007
Product data sheet
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NXP Semiconductors
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
DESCRIPTION
BFQ19
PINNING
NPN transistor in a SOT89 plastic
envelope intended for application in
thick and thin-film circuits. It is
primarily intended for use in UHF and
microwave amplifiers such as in aerial
amplifiers, radar systems,
oscilloscopes, spectrum analysers
etc.
PIN
DESCRIPTION
Code: FB
1
emitter
2
collector
3
base
3
The transistor features very low
intermodulation distortion and high
power gain. Due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
2
1
Fig.1 SOT89.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
−
MAX.
UNIT
VCEO
collector-emitter voltage
IC
DC collector current
−
100
mA
Ptot
total power dissipation
up to Ts = 145 °C (note 1)
−
1
W
fT
transition frequency
Ic = 50 mA; VCE = 10 V; f = 500 MHz;
Tj = 25 °C
5.5
−
GHz
Cre
feedback capacitance
Ic = 10 mA; VCE = 10 V; f = 1 MHz;
Tamb = 25 °C
1.3
−
pF
F
noise figure
Ic = 50 mA; VCE = 10 V; Zs = opt.;
f = 500 MHz; Tamb = 25 °C
3.3
−
dB
open base
15
V
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
3.3
V
IC
DC collector current
−
100
mA
ICM
peak collector current
f > 1 MHz
−
150
mA
Ptot
total power dissipation
up to Ts = 145 °C (note 1)
−
1
W
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
175
°C
Note
1. Ts is the temperature at the soldering point of the collector tab.
Rev. 03 - 28 September 2007
2 of 7
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFQ19
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to
soldering point
THERMAL RESISTANCE
up to Ts = 145 °C (note 1)
30 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
−
−
100
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 10 V
hFE
DC current gain
IC = 70 mA; VCE = 10 V
25
80
−
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
1.6
−
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
5
−
pF
Cre
feedback capacitance
IC = 10 mA; VCE = 10 V; f = 1 MHz;
Tamb = 25 °C
−
1.3
−
pF
fT
transition frequency
IC = 70 mA; VCE = 10 V; f = 500 MHz
4.4
5.5
−
GHz
GUM
maximum unilateral power gain
(note 1)
IC = 50 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 °C
−
11.5
−
dB
IC = 50 mA; VCE = 10 V;
f = 800 MHz; Tamb = 25 °C
−
7.5
−
dB
IC = 50 mA; VCE = 10 V; Zs = opt.;
f = 500 MHz; Tamb = 25 °C
−
3.3
−
dB
F
noise figure
nA
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S 21
- dB.
G UM = 10 log ------------------------------------------------------------2 
2

 1 – S 11   1 – S 22 
Rev. 03 - 28 September 2007
3 of 7
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFQ19
MBB774
120
MBB830
5
handbook, halfpage
handbook, halfpage
Cc
(pF)
h FE
4
80
3
2
40
1
0
0
0
40
80
120
0
5
I C (mA)
10
15
20
V CB (V)
VCE = 10 V; Tj = 25 °C.
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current.
Collector capacitance as a function of
collector-base voltage.
MBB773
8
handbook, halfpage
fT
(GHz)
6
4
2
0
0
40
80
I C (mA)
120
VCE = 10 V; f = 500 MHz; Tj = 25 °C.
Fig.4
Transition frequency as a function of
collector current.
Rev. 03 - 28 September 2007
4 of 7
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFQ19
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
D
A
bp3
E
HE
Lp
1
2
3
c
bp2
w M B
bp1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp1
bp2
bp3
c
D
E
e
e1
HE
Lp
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
1.2
0.8
0.13
OUTLINE
VERSION
SOT89
REFERENCES
IEC
JEDEC
JEITA
TO-243
SC-62
Rev. 03 - 28 September 2007
EUROPEAN
PROJECTION
ISSUE DATE
06-03-16
06-08-29
5 of 7
BFQ19
NXP Semiconductors
NPN 5 GHz wideband transistor
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
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reliable. However, NXP Semiconductors does not give any representations or
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information.
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limitation specifications and product descriptions, at any time and without
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space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
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NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
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Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
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subject to the general terms and conditions of commercial sale, as published
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Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
Rev. 03 - 28 September 2007
6 of 7
BFQ19
NXP Semiconductors
NPN 5 GHz wideband transistor
Revision history
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BFQ19_N_3
20070928
Product data sheet
-
BFQ19_CNV_2
-
-
Modifications:
BFQ19_CNV_2
•
Fig. 1 and package outline updated
19950901
Product specification
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 28 September 2007
Document identifier: BFQ19_N_3
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