Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BFR505T
NPN 9 GHz wideband transistor
Product specification
Supersedes data of 2000 Mar 14
2000 May 17
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505T
FEATURES
DESCRIPTION
 Low current consumption
NPN transistor in a plastic SOT416
(SC-75) package.
 High power gain
3
lfpage
 Low noise figure
 High transition frequency
 Gold metallization ensures
excellent reliability
 SOT416 (SC-75) package.
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
1
2
Top view
MBK090
Marking code: N0.
APPLICATIONS
Low power amplifiers, oscillators and
mixers particularly in RF portable
communication equipment (cellular
phones, cordless phones and pagers)
up to 2 GHz.
Fig.1 SOT416.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter


20
V
VCES
collector-emitter voltage
RBE = 0


15
V
IC
DC collector current


18
mA
Ptot
total power dissipation
Ts  75 C; note 1


150
mW
hFE
DC current gain
IC = 5 mA; VCE = 6 V; Tj = 25 C
60
120
250
fT
transition frequency
IC = 5 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 C

9

GHz
GUM
maximum unilateral power gain
IC = 5 mA; VCE = 6 V; f = 900 MHz; 
Tamb = 25 C
17

dB
F
noise figure
IC = 1.25 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 C

1.2
1.7
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
VCBO
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter

20
V
VCE
collector-emitter voltage
RBE = 0

15
V
VEBO
emitter-base voltage
open collector

2.5
V
IC
DC collector current

18
mA
Ptot
total power dissipation

150
mW
Tstg
storage temperature
65
+150
C
Tj
junction temperature

150
C
Ts  75 C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
2000 May 17
2
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505T
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to soldering point
MGU068
200
Ptot
(mW)
150
100
50
0
0
50
100
150
200
Ts (°C)
Fig.2 Power derating curve.
2000 May 17
3
VALUE
UNIT
500
K/W
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505T
CHARACTERISTICS
Tj = 25 C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 6 V


50
hFE
DC current gain
IC = 5 mA; VCE = 6 V
60
120
250
Cc
collector capacitance
IE = ie = 0; VCB = 6 V; f = 1 MHz

0.4

Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz

0.4

pF
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz

0.3

pF
fT
transition frequency
IC = 5 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 C

9

GHz
GUM
maximum unilateral power gain; IC = 5 mA; VCE = 6 V; Tamb = 25 C;
note 1
f = 900 MHz

17

dB

10

dB
f = 2 GHz
S21
2
F
nA
pF
insertion power gain
IC = 5 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 C
13
14

dB
noise figure
s = opt; IC = 1.25 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 C

1.2
1.7
dB
s = opt; IC = 5 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 C

1.6
2.1
dB
s = opt; IC = 1.25 mA; VCE = 6 V;
f = 2 GHz; Tamb = 25 C

1.9

dB
PL1
output power at 1 dB gain
compression
IC = 5 mA; VCE = 6 V; RL = 50 ;
f = 900 MHz; Tamb = 25 C

4

dBm
ITO
third-order intercept point
note 2

10

dBm
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S 21
- dB
G UM = 10 log --------------------------------------------------------2
2
 1 – S 11   1 – S 22 
2. IC = 5 mA; VCE = 6 V; RL = 50 ; f = 900 MHz; Tamb = 25 C; fp = 900 MHz; fq = 902 MHz; measured at
f(2p-q) = 898 MHz and at f(2q-p) = 904 MHz.
2000 May 17
4
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505T
MRC019
MRC011
200
handbook,0.5
halfpage
handbook, halfpage
h
C re
(pF)
FE
0.4
150
0.3
100
0.2
50
0.1
0
10−3
10−2
10−1
0
10
102
I C (mA)
1
0
2
VCE = 6 V; Tj = 25 C.
IC = 0; f = 1 MHz.
Fig.3
Fig.4
DC current gain as a function of collector
current.
MRC013
12
T
(GHz)
10
VCE = 8 V
8
3V
handbook,
f halfpage
6
4
2
0
10−1
1
10
I C (mA)
102
f = 1 GHz; Tamb = 25 C.
Fig.5
Transition frequency as a function of
collector current.
2000 May 17
5
4
6
8
10
VCB (V)
Feedback capacitance as a function of
collector-base voltage.
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505T
In Figs 6 to 9, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
MRC016
25
gain
(dB)
MRC017
20
handbook, halfpage
handbook, halfpage
gain
(dB)
20
15
G UM
MSG
15
G max
MSG
10
G UM
10
5
5
0
0
2
4
6
0
8
I C (mA)
0
2
4
6
8
I C (mA)
VCE = 6 V; f = 900 MHz; Tamb = 25 C.
VCE = 6 V; f = 2 GHz; Tamb = 25 C.
Fig.6 Gain as a function of collector current.
Fig.7 Gain as a function of collector current.
MRC015
handbook, 50
halfpage
MRC014
50
handbook, halfpage
gain
(dB)
gain
(dB)
40
G UM
40
G UM
30
30
MSG
20
20
MSG
G max
10
G max
0
10−2
10−1
1
f (GHz)
10
0
10−2
10
IC = 1.25 mA; VCE = 6 V; Tamb = 25 C.
1
f (GHz)
10
IC = 5 mA; VCE = 6 V; Tamb = 25 C.
Fig.8 Gain as a function of frequency.
2000 May 17
10−1
Fig.9 Gain as a function of frequency.
6
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505T
MRC018
4
MRC012
4
handbook, halfpage
handbook, halfpage
F
(dB)
F
(dB)
3
3
I C = 5 mA
2
2
f = 2 GHz
1.25 mA
900 MHz
1
500 MHz
0
10−1
1
1
I C (mA)
0
10−1
10
1
f (GHz)
10
VCE = 6 V; Tamb = 25 C.
VCE = 6 V; Tamb = 25 C.
Fig.10 Minimum noise figure as a function of
collector current.
Fig.11 Minimum noise figure as a function of
frequency.
pot. unst.
region
handbook, full pagewidth
90°
1.0
1
135°
2
0.5
0.8
45°
0.6
stability
0.2
circle
0.4
5
Fmin = 1. 2 dB
180°
0.2
0
0.5
1
0.2
ΓOPT 5
2
0°
F = 1.5 dB
0
F = 2 dB
0.2
5
F = 3 dB
0.5
2
−135°
−45°
1
MRC073
IC = 1.25 mA; VCE = 6 V;
f = 900 MHz; Zo = 50 .
−90°
Fig.12 Noise circle.
2000 May 17
7
1.0
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505T
90°
handbook, full pagewidth
1.0
1
135°
F = 4 dB
F = 3 dB
0.5
0.8
45°
2
0.6
F = 2.5 dB
Fmin = 1.9 dB
0.2
0.4
5
ΓOPT
0.2
180°
0.2
0
0.5
1
5
2
0°
0
5
0.2
0.5
2
−135°
−45°
1
MRC074
1.0
−90°
IC = 1.25 mA; VCE = 6 V;
f = 2 GHz; Zo = 50 .
Fig.13 Noise circle.
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
3 GHz
0°
0
40 MHz
5
0.2
0.5
2
−135°
−45°
1
MRC056
IC = 5 mA; VCE = 6 V;
Zo = 50 .
−90°
Fig.14 Common emitter input reflection coefficient (S11).
2000 May 17
8
1.0
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505T
90°
handbook, full pagewidth
135°
45°
40 MHz
3 GHz
180°
15
12
9
6
0°
3
−135°
−45°
−90°
MRC057
IC = 5 mA; VCE = 6 V.
Fig.15 Common emitter forward transmission coefficient (S21).
90°
handbook, full pagewidth
135°
45°
3 GHz
180°
0.5
40 MHz
0.4
0.3
0.2
0°
0.1
−135°
−45°
−90°
MRC058
IC = 5 mA; VCE = 6 V.
Fig.16 Common emitter reverse transmission coefficient (S12).
2000 May 17
9
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505T
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
40 MHz
3 GHz
0.2
0.5
0
5
2
−135°
0°
−45°
1
MRC059
IC = 5 mA; VCE = 6 V;
Zo = 50 .
−90°
Fig.17 Common emitter output reflection coefficient (S22).
2000 May 17
10
1.0
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505T
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT416
D
E
B
A
X
HE
v M A
3
Q
A
1
A1
2
e1
c
bp
w M B
Lp
e
detail X
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
0.95
0.60
0.1
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
1
0.5
1.75
1.45
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT416
2000 May 17
REFERENCES
IEC
JEDEC
JEITA
SC-75
11
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505T
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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Semiconductors and customer have explicitly agreed
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sale of NXP Semiconductors.
2000 May 17
12
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505T
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applications.
Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
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2000 May 17
13
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Printed in The Netherlands
R77/03/pp14
Date of release: 2000 May 17
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