Data Sheet

SO
T2
3
BFR520
NPN 9 GHz wideband transistor
Rev. 4 — 13 September 2011
Product data sheet
1. Product profile
1.1 General description
The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package.
1.2 Features and benefits




High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability.
1.3 Applications
 RF front end wideband applications in the GHz range
 Analog and digital cellular telephones
 Cordless telephones (CT1, CT2, DECT, etc.)
 Radar detectors
 Pagers and satellite TV tuners (SATV)
 Repeater amplifiers in fiber-optic systems.
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
VCBO
collector-base voltage
VCES
collector-emitter
voltage
IC
collector current (DC)
Ptot
total power dissipation
up to Tsp = 97 C
hFE
DC current gain
Cre
RBE = 0 
Min
Typ
Max
Unit
-
-
20
V
-
-
15
V
-
-
70
mA
-
-
300
mW
IC = 20 mA; VCE = 6 V
60
120
250
feedback capacitance
IC = ic = 0 A; VCB = 6 V;
f = 1 MHz
-
0.4
-
pF
fT
transition frequency
IC = 20 mA; VCE = 6 V;
f = 1 GHz
-
9
-
GHz
GUM
maximum unilateral
power gain
IC = 20 mA; VCE = 6 V;
Tamb = 25 C
f = 900 MHz
-
15
-
dB
f = 2 GHz
-
9
-
dB
[1]
BFR520
NXP Semiconductors
NPN 9 GHz wideband transistor
Table 1.
Quick reference data …continued
Symbol Parameter
Conditions
Min
Typ
Max
Unit
s212
insertion power gain
IC = 20 mA; VCE = 6 V;
Tamb = 25 C;
f = 900 MHz
13
14
-
dB
NF
noise figure
s = opt; Tamb = 25 C
IC = 5 mA; VCE = 6 V;
f = 900 MHz
-
1.1
1.6
dB
IC = 20 mA; VCE = 6 V;
f = 900 MHz
-
1.6
2.1
dB
IC = 5 mA; VCE = 8 V;
f = 2 GHz
-
1.9
-
dB
[1]
Tsp is the temperature at the soldering point of the collector tab.
2. Pinning information
Table 2.
Pinning
Pin
Description
1
base
2
emitter
3
collector
Simplified outline
Symbol
3
3
1
1
2
2
sym021
3. Ordering information
Table 3.
Ordering information
Type number
BFR520
Package
Name
Description
Version
-
plastic surface mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking
Type number
Marking code[1]
BFR520
32*
[1]
* = p: Made in Hong Kong
* = t: Made in Malaysia
* = W: Made in China.
BFR520
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 13 September 2011
© NXP B.V. 2011. All rights reserved.
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BFR520
NXP Semiconductors
NPN 9 GHz wideband transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
20
V
VCES
collector-emitter voltage
RBE = 0 
-
15
V
VEBO
emitter-base voltage
open collector
-
2.5
V
IC
collector current (DC)
-
70
mA
-
300
mW
up to Tsp = 97 C
[1]
Ptot
total power dissipation
Tstg
storage temperature
65
150
C
Tj
junction temperature
-
175
C
[1]
Tsp is the temperature at the soldering point of the collector tab.
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol Parameter
Rth(j-s)
[1]
Conditions
[1]
thermal resistance from junction to soldering point
Typ
Unit
260
K/W
Tsp is the temperature at the soldering point of the collector tab.
7. Characteristics
Table 7.
Characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
IE = 0 A; VCB = 6 V
-
-
50
nA
ICBO
collector cut-off
current
hFE
DC current gain IC = 20 mA; VCE = 6 V
60
120
250
Ce
emitter
capacitance
IC = ic = 0 A; VEB = 0.5 V;
f = 1 MHz
-
1
-
pF
Cc
collector
capacitance
IE = ie = 0 A; VCB = 6 V;
f = 1 MHz
-
0.5
-
pF
Cre
feedback
capacitance
IC = 0 A; VCB = 6 V;
f = 1 MHz
-
0.4
-
pF
fT
transition
frequency
IC = 20 mA; VCE = 6 V;
f = 1 GHz
-
9
-
GHz
GUM
maximum
IC = 20 mA; VCE = 6 V;
unilateral power Tamb = 25 C
gain
f = 900 MHz
-
15
-
dB
-
9
-
dB
13
14
-
dB
f = 2 GHz
s21
BFR520
Product data sheet
2
insertion power
gain
IC = 20 mA; VCE = 6 V;
Tamb = 25 C; f = 900 MHz
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 13 September 2011
[1]
© NXP B.V. 2011. All rights reserved.
3 of 14
BFR520
NXP Semiconductors
NPN 9 GHz wideband transistor
Table 7.
Characteristics …continued
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
NF
s = opt; VCE = 6 V;
Tamb = 25 C
noise figure
Min
Max
Unit
IC = 5 mA; f = 900 MHz
-
1.1
1.6
dB
IC = 20 mA; f = 900 MHz
-
1.6
2.1
dB
IC = 5 mA; f = 2 GHz
-
1.9
-
dB
-
17
-
dBm
-
26
-
dBm
PL(1dB)
output power at IC = 20 mA; VCE = 6 V;
1 dB gain
RL = 50 ; Tamb = 25 C;
compression
f = 900 MHz
ITO
third order
intercept point
[1]
Typ
[2]
GUM is the maximum unilateral power gain, assuming s12 is zero and
2
s 21
G UM = 10 log ----------------------------------------------------- dB.
2
2
 1 – s 11   1 – s 22 
[2]
IC = 20 mA; VCE = 6 V; RL = 50 ; Tamb = 25 C; fp = 900 MHz; fq = 902 MHz
Measured at f(2pq) = 898 MHz and f(2qp) = 904 MHz.
mra702
400
Ptot
(mW)
mra703
250
hFE
200
300
150
200
100
100
50
0
0
50
100
150
0
10−2
200
10−1
1
102
10
I C (mA)
Tsp (°C)
VCE = 6 V.
Fig 1.
Power derating curve.
BFR520
Product data sheet
Fig 2.
DC current gain as a function of collector
current.
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Rev. 4 — 13 September 2011
© NXP B.V. 2011. All rights reserved.
4 of 14
BFR520
NXP Semiconductors
NPN 9 GHz wideband transistor
mra704
0.6
Cre
fT
(pF)
(GHz)
0.4
8
0.2
4
0
0
4
8
VCE = 6 V
3V
0
10−1
12
VCB (V)
1
10
IC (mA)
102
Tamb = 25 C; f = 1 GHz.
IC = 0 A; f = 1 MHz.
Fig 3.
mra705
12
Feedback capacitance as a function of
collector-base voltage.
Fig 4.
mra706
25
Transition frequency as a function of collector
current.
mra707
25
gain
(dB)
gain
(dB)
20
20
MSG
Gmax
GUM
15
15
Gmax
10
10
GUM
5
5
0
0
0
10
20
IC (mA)
30
VCE = 6 V; f = 900 MHz.
Fig 5.
Product data sheet
10
20
I C (mA)
30
VCE = 6 V; f = 2 GHz.
Gain as a function of collector current;
f = 900 MHz.
BFR520
0
Fig 6.
Gain as a function of collector current;
f = 2 GHz.
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 13 September 2011
© NXP B.V. 2011. All rights reserved.
5 of 14
BFR520
NXP Semiconductors
NPN 9 GHz wideband transistor
mra708
50
gain
(dB)
mra709
50
gain
(dB)
GUM
40
GUM
40
MSG
MSG
30
30
20
20
Gmax
10
0
10
102
103
f (MHz)
0
10
104
VCE = 6 V; IC = 5 mA.
Fig 7.
Gmax
10
102
103
f (MHz)
104
VCE = 6 V; IC = 20 mA.
Gain as a function of frequency; IC = 5 mA.
mra714
5
Fmin
(dB)
f (MHz)
4
900
1000
20
Gass
(dB)
15
Fig 8.
Gain as a function of frequency; IC = 20 mA.
mra715
5
IC (mA)
Fmin
(dB)
5
20
20
Gass
(dB)
15
4
Gass
Gass
3
10
3
10
5
2
5
0
1
2000
2000
2
1000
900
500
1
Fmin
20
Fmin
0
5
0
1
10
I C (mA)
−5
102
VCE = 6 V.
Fig 9.
Product data sheet
103
f (MHz)
−5
104
VCE = 6 V.
Minimum noise figure and associated
available gain as functions of collector
current.
BFR520
0
102
Fig 10. Minimum noise figure and associated
available gain as functions of frequency.
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 13 September 2011
© NXP B.V. 2011. All rights reserved.
6 of 14
BFR520
NXP Semiconductors
NPN 9 GHz wideband transistor
stability
circle
90°
1.0
+1
135°
+0.5
0.8
45°
+2
pot. unst.
region
0.6
Fmin = 1.1 dB
+0.2
0.4
+5
ΓOPT
180°
0
0.2
1
0.5
0.2
2
5
0°
0
F = 1.5 dB
F = 2 dB
−0.2
−5
F = 3 dB
−135°
−2
−0.5
−45°
−1
1.0
−90°
mra716
Zo = 50 ; VCE = 6 V; IC = 5 mA; f = 900 MHz.
Fig 11. Noise circle figure; f = 900 MHz.
90°
1.0
+1
135°
+0.5
0.8
45°
+2
0.6
F = 3 dB
F = 2.5 dB
F = 2 dB
Fmin = 1. 9 dB
+0.2
ΓMS
0
0.2
180°
Gmax = 9.3 dB
0.5
ΓOPT
1
0.4
+5
0.2
2
5
0°
0
G = 9 dB
−5
−0.2
G = 8 dB
G = 7 dB
−135°
−2
−0.5
−45°
−1
−90°
1.0
mra717
Zo = 50 ; VCE = 6 V; IC = 5 mA; f = 2000 MHz.
Fig 12. Noise circle figure; f = 2000 MHz.
BFR520
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 13 September 2011
© NXP B.V. 2011. All rights reserved.
7 of 14
BFR520
NXP Semiconductors
NPN 9 GHz wideband transistor
90°
1.0
+1
135°
+0.5
0.8
45°
+2
0.6
+0.2
0.4
+5
0.2
3 GHz
180°
0
0.2
1
0.5
2
5
10
0°
0
40 MHz
−5
−0.2
−135°
−2
−0.5
−45°
−1
1.0
−90°
mra710
VCE = 6 V; IC = 20 mA; Zo = 50 .
Fig 13. Common emitter input reflection coefficient (s11).
90°
135°
45°
40 MHz
180°
3 GHz
50
40
30
20
10
0°
0
−135°
−45°
−90°
mra711
VCE = 6 V; IC = 20 mA.
Fig 14. Common emitter forward transmission coefficient (s21).
BFR520
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 13 September 2011
© NXP B.V. 2011. All rights reserved.
8 of 14
BFR520
NXP Semiconductors
NPN 9 GHz wideband transistor
90°
135°
45°
3 GHz
180°
40 MHz
0.5
0.4
0.3
0.2
0.1
0°
0
−135°
−45°
−90°
mra712
VCE = 6 V; IC = 20 mA.
Fig 15. Common emitter reverse transmission coefficient (s12).
90°
1.0
+1
135°
+0.5
0.8
45°
+2
0.6
+0.2
0.4
+5
0.2
180°
0
0.2
0.5
1
2
5
10
0°
0
40 MHz
3 GHz
−5
−0.2
−135°
−2
−0.5
−45°
−1
−90°
1.0
mra713
VCE = 6 V; IC = 20 mA; Zo = 50 .
Fig 16. Common emitter output reflection coefficient (s22).
BFR520
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 13 September 2011
© NXP B.V. 2011. All rights reserved.
9 of 14
BFR520
NXP Semiconductors
NPN 9 GHz wideband transistor
8. Package outline
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
JEITA
TO-236AB
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
Fig 17. Package outline SOT23 (TO-236AB).
BFR520
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 13 September 2011
© NXP B.V. 2011. All rights reserved.
10 of 14
BFR520
NXP Semiconductors
NPN 9 GHz wideband transistor
9. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BFR520 v.4
20110913
Product data sheet
-
BFR520 v.3
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
•
Legal texts have been adapted to the new company name where appropriate.
Package outline drawings have been updated to the latest version.
BFR520 v.3
(9397 750 13397)
20040901
Product data sheet
-
BFR520_CNV v.2
BFR520_CNV v.2
19971204
Product specification
-
-
BFR520
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 13 September 2011
© NXP B.V. 2011. All rights reserved.
11 of 14
BFR520
NXP Semiconductors
NPN 9 GHz wideband transistor
10. Legal information
10.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
10.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
10.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
BFR520
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 13 September 2011
© NXP B.V. 2011. All rights reserved.
12 of 14
BFR520
NXP Semiconductors
NPN 9 GHz wideband transistor
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
11. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BFR520
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 13 September 2011
© NXP B.V. 2011. All rights reserved.
13 of 14
BFR520
NXP Semiconductors
NPN 9 GHz wideband transistor
12. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
10.1
10.2
10.3
10.4
11
12
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 13 September 2011
Document identifier: BFR520