Data Sheet

BFR92A
NPN 5 GHz wideband transistor
Rev. 04 — 2 March 2009
Product data sheet
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
[email protected] use [email protected]
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with:
- © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via [email protected]). Thank you for your
cooperation and understanding,
NXP Semiconductors
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
FEATURES
DESCRIPTION
• High power gain
NPN wideband transistor in a plastic
SOT23 package.
PNP complement: BFT92.
• Low noise figure
• Low intermodulation distortion.
3
page
PINNING
APPLICATIONS
• RF wideband amplifiers and
oscillators.
PIN
1
Top view
DESCRIPTION
1
base
2
emitter
3
collector
2
MSB003
Marking code: P2%.
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCBO
collector-base voltage
−
20
V
VCEO
collector-emitter voltage
−
15
V
IC
collector current (DC)
−
25
mA
Ptot
total power dissipation
Ts ≤ 95 °C
−
300
mW
Cre
feedback capacitance
IC = ic = 0; VCE = 10 V; f = 1 MHz
0.35
−
pF
fT
transition frequency
IC = 15 mA; VCE = 10 V; f = 500 MHz
5
−
GHz
GUM
maximum unilateral power gain
IC = 15 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C
14
−
dB
IC = 15 mA; VCE = 10 V; f = 2 GHz;
Tamb = 25 °C
8
−
dB
F
noise figure
IC = 5 mA; VCE = 10 V; f = 1 GHz;
Γs = Γopt; Tamb = 25 °C
2.1
−
dB
VO
output voltage
dim = −60 dB; IC = 14 mA; VCE = 10 V;
RL = 75 Ω; fp + fq − fr = 793.25 MHz
150
−
mV
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
2
V
IC
collector current (DC)
−
25
mA
Ptot
total power dissipation
−
300
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
175
°C
Ts ≤ 95 °C; note 1; see Fig.3
Note
1. Ts is the temperature at the soldering point of the collector pin.
Rev. 04 - 2 March 2009
2 of 12
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point Ts ≤ 95 °C; note 1
VALUE
UNIT
260
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
TYP.
−
MAX.
ICBO
collector leakage current
IE = 0; VCB = 10 V
hFE
DC current gain
IC = 15 mA; VCE = 10 V; see Fig.4
65
90
135
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz;
see Fig.5
−
0.6
−
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 10 V; f = 1 MHz
−
1.2
−
pF
Cre
feedback capacitance
IC = ic = 0; VCE = 10 V; f = 1 MHz
−
0.35
−
pF
fT
transition frequency
IC = 15 mA; VCE = 10 V; f = 500 MHz;
see Fig.6
−
5
−
GHz
GUM
maximum unilateral power
gain (note 1)
IC = 15 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C
−
14
−
dB
IC = 15 mA; VCE = 10 V; f = 2 GHz;
Tamb = 25 °C
−
8
−
dB
IC = 5 mA; VCE = 10 V; f = 1 GHz;
Γs = Γopt; Tamb = 25 °C;
see Figs 13 and 14
−
2.1
−
dB
IC = 5 mA; VCE = 10 V; f = 2 GHz;
Γs = Γopt; Tamb = 25 °C;
see Figs 13 and 14
−
3
−
dB
F
noise figure
50
UNIT
nA
VO
output voltage
notes 2 and 3
−
150
−
mV
d2
second order intermodulation
distortion
notes 2 and 4; see Fig.16
−
−50
−
dB
Notes
2
S 21
1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ------------------------------------------------------------- dḂ .
2 
2

 1 – S 11   1 – S 22 
2. Measured on the same die in a SOT37 package (BFR90A).
3. dim = −60 dB (DIN 45004B); IC = 14 mA; VCE = 10 V; RL = 75 Ω; VSWR < 2; Tamb = 25 °C
Vp = VO at dim = −60 dB; fp = 795.25 MHz;
Vq = VO −6 dB; fq = 803.25 MHz;
Vr = VO −6 dB; fr = 805.25 MHz;
measured at fp + fq − fr = 793.25 MHz.
4. IC = 14 mA; VCE = 10 V; RL = 75 Ω; VSWR < 2; Tamb = 25 °C
Vp = 60 mV at fp = 250 MHz;
Vq = 60 mV at fq = 560 MHz;
measured at fp + fq = 810 MHz.
Rev. 04 - 2 March 2009
3 of 12
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
2.2 nF
handbook, full pagewidth
2.2 nF
VCC
VBB
L3
33 kΩ
L2
1 nF
1 nF
L1
1 nF
75 Ω
input
300 Ω
DUT
18 Ω
3.3 pF
75 Ω
output
0.82 pF
MBB269
L1 = L3 = 5 µH choke.
L2 = 3 turns 0.4 mm copper wire, internal diameter 3 mm, winding pitch 1 mm.
Fig.2 Intermodulation distortion and second harmonic distortion MATV test circuit.
MEA425 - 1
MCD074
120
400
handbook,
halfpage
handbook, halfpage
Ptot
(mW)
h FE
300
80
200
40
100
0
0
0
50
100
150
0
200
10
Ts ( o C)
20
I C (mA)
30
VCE = 10 V; Tj = 25 °C.
Fig.4
DC current gain as a function of collector
current; typical values.
Rev. 04 - 2 March 2009
4 of 12
Fig.3 Power derating curve.
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
MBB274
1
MBB275
6
handbook, halfpage
handbook, halfpage
Cc
(pF)
fT
(GHz)
0.8
4
0.6
0.4
2
0.2
0
0
0
5
10
15
VCB (V)
20
0
10
20
IC = ic = 0; f = 1 MHz; Tj = 25 °C.
VCE = 10 V; f = 500 MHz; Tamb = 25 °C.
Fig.5
Fig.6
Collector capacitance as a function of
collector-base voltage; typical values.
MBB278
handbook,30
halfpage
gain
I C (mA)
30
Transition frequency as a function of
collector current; typical values.
MBB279
handbook,30
halfpage
gain
(dB)
MSG
(dB)
20
20
MSG
G UM
G UM
10
10
0
0
5
10
15
20
0
25
IC (mA)
0
5
10
15
VCE = 10 V; f = 500 MHz.
MSG = maximum stable gain;
GUM = maximum unilateral power gain.
VCE = 10 V; f = 1 GHz.
MSG = maximum stable gain;
GUM = maximum unilateral power gain.
Fig.7
Fig.8
Gain as a function of collector current;
typical values.
Rev. 04 - 2 March 2009
25
20
I C (mA)
Gain as a function of collector current;
typical values.
5 of 12
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
MBB280
handbook,50
halfpage
BFR92A
MBB281
handbook,50
halfpage
gain
gain
(dB)
(dB)
40
40
G UM
G UM
30
30
MSG
MSG
20
20
G max
10
10
G max
0
102
10
103
f (MHz)
0
104
IC = 5 mA; VCE = 10 V.
GUM = maximum unilateral power gain; MSG = maximum stable gain;
Gmax = maximum available gain.
Fig.9
10
102
103
f (MHz)
104
IC = 15 mA; VCE = 10 V.
GUM = maximum unilateral power gain; MSG = maximum stable gain;
Gmax = maximum available gain.
Gain as a function of frequency;
typical values.
Fig.10 Gain as a function of frequency;
typical values.
MBB277
MBB276
30
40
handbook, halfpage
handbook,
halfpage
B
S
(mS)
BS
(mS)
F = 3.5 dB
20
3.0
20
F = 3.0 dB
10
2.5
2.5
0
1.8
0
2.0
2.4
10
1.7
20
20
30
40
0
20
40
60
80
G S (mS)
IC = 4 mA; VCE = 10 V; f = 800 MHz.
Fig.11 Circles of constant noise figure;
typical values.
0
20
40
60
G S (mS)
IC = 14 mA; VCE = 10 V; f = 800 MHz.
Fig.12 Circles of constant noise figure;
typical values.
Rev. 04 - 2 March 2009
6 of 12
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
MCD081
4
MCD082
4
handbook, halfpage
handbook, halfpage
f = 2 GHz
F
(dB)
I C = 15 mA
F
(dB)
3
10 mA
3
5 mA
1 GHz
500 MHz
2
2
1
1
0
1
10
0
10 2
10 2
I C (mA)
10 3
f (MHz)
10 4
VCE = 10 V.
VCE = 10 V.
Fig.13 Minimum noise figure as a function of
collector current; typical values.
Fig.14 Minimum noise figure as a function of
frequency; typical values.
MBB282
−45
−50
d2
(dB)
−40
−55
−45
−60
−50
−65
−55
d im
(dB)
−70
10
MBB283
−35
handbook, halfpage
handbook, halfpage
20
I C (mA)
VCE = 10 V; VO = 150 mV (43.5 dBmV);
fp + fq−fr = 793.25 MHz; Tamb = 25 °C.
Measured in MATV test circuit (see Fig.2).
Fig.15 Intermodulation distortion;
typical values.
30
−60
10
20
I C (mA)
30
VCE = 10 V; VO = 60 mV; fp + fq−fr = 810 MHz; Tamb = 25 °C.
Measured in MATV test circuit (see Fig.2).
Fig.16 Second order intermodulation distortion;
typical values.
Rev. 04 - 2 March 2009
7 of 12
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
1
handbook, full pagewidth
0.5
2
0.2
5
10
+j
0.2
0
0.5
1200
1000
−j
1
2
5
10
∞
800
500
10
200
5
0.2
100 MHz
2
0.5
MBB270
1
IC = 14 mA; VCE = 10 V; Zo = 50 Ω; Tamb = 25 °C.
Fig.17 Common emitter input reflection coefficient (S11); typical values.
90°
handbook, full pagewidth
120°
150°
100
MHz
60°
30°
200
500
800
1200
1000
180°
+ϕ
10
20
30
0°
−ϕ
30°
150°
60°
120°
90°
MBB273
IC = 14 mA; VCE = 10 V; Tamb = 25 °C.
Fig.18 Common emitter forward transmission coefficient (S21); typical values.
Rev. 04 - 2 March 2009
8 of 12
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
90°
handbook, full pagewidth
120°
60°
1200 MHz
typ
150°
1000
30°
800
500
+ϕ
200
100
180°
0.05
0.1
0.15
0°
−ϕ
30°
150°
60°
120°
MBB271
90°
IC = 14 mA; VCE = 10 V; Tamb = 25 °C.
Fig.19 Common emitter reverse transmission coefficient (S12); typical values.
1
handbook, full pagewidth
0.5
2
0.2
5
10
+j
0
0.2
0.5
1
−j
2
5
10
1000 800
500
1200
100
200 MHz
0.2
∞
10
5
2
0.5
1
MBB272
IC = 14 mA; VCE = 10 V; Zo = 50 Ω; Tamb = 25 °C.
Fig.20 Common emitter output reflection coefficient (S22); typical values.
Rev. 04 - 2 March 2009
9 of 12
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
SOT23
Rev. 04 - 2 March 2009
10 of 12
BFR92A
NXP Semiconductors
NPN 5 GHz wideband transistor
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Rev. 04 - 2 March 2009
11 of 12
BFR92A
NXP Semiconductors
NPN 5 GHz wideband transistor
Revision history
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BFR92A_N_4
20090302
Product data sheet
-
BFR92A_N_3
Modifications:
•
Fig.1 on page 2; Figure note changed
BFR92A_N_3
20080307
Product data sheet
-
BFR92A_2
BFR92A_2
(9397 750 02766)
19971029
Product specification
-
BFR92A_1
BFR92A_1
19950901
-
-
-
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 2 March 2009
Document identifier: BFR92A_N_4
Similar pages