Data Sheet

BFR92AW
NPN 5 GHz wideband transistor
Rev. 03 — 12 March 2008
Product data sheet
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
[email protected] use [email protected]
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with:
- © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via [email protected]). Thank you for your
cooperation and understanding,
NXP Semiconductors
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AW
FEATURES
DESCRIPTION
• High power gain
Silicon NPN transistor encapsulated
in a plastic SOT323 (S-mini) package.
The BFR92AW uses the same crystal
as the SOT23 version, BFR92A.
• Gold metallization ensures
excellent reliability
• SOT323 (S-mini) package.
handbook, 2 columns
PINNING
APPLICATIONS
It is designed for use in RF amplifiers,
mixers and oscillators with signal
frequencies up to 1 GHz.
PIN
DESCRIPTION
1
base
2
emitter
3
collector
3
1
2
Top view
MBC870
Marking code: P2.
Fig.1 SOT323
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−
20
V
VCEO
collector-emitter voltage
open base
−
−
15
V
IC
collector current (DC)
−
−
25
mA
Ptot
total power dissipation
up to Ts = 93 °C; note 1
−
−
300
mW
hFE
current gain
IC = 15 mA; VCE = 10 V
65
90
135
Cre
feedback capacitance
IC = 0; VCE = 10 V; f = 1 MHz;
Tamb = 25 °C
−
0.35
−
pF
fT
transition frequency
IC = 15 mA; VCE = 10 V; f = 500 MHz
3.5
5
−
GHz
GUM
maximum unilateral power
gain
IC = 15 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C
−
14
−
dB
IC = 15 mA; VCE = 10 V; f = 2 GHz;
Tamb = 25 °C
−
8
−
dB
IC = 5 mA; VCE = 10 V; f = 1 GHz;
Γs = Γopt
−
2
−
dB
−
−
150
°C
F
noise figure
Tj
junction temperature
Note
1. Ts is the temperature at the soldering point of the collector pin.
Rev. 03 - 12 March 2008
2 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AW
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
2
V
IC
collector current (DC)
−
25
mA
Ptot
total power dissipation
−
300
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
up to Ts = 93 °C; see Fig.2; note 1
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
up to Ts = 93 °C; note 1
thermal resistance from junction to
soldering point
VALUE
UNIT
190
K/W
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector pin.
MLB540
400
P tot
(mW)
300
200
100
0
0
50
100
150
200
T s ( o C)
Fig.2 Power derating curve
Rev. 03 - 12 March 2008
3 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AW
CHARACTERISTICS
Tj = 25 °C (unless otherwise specified).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector leakage current
IE = 0; VCB = 10 V
−
−
hFE
DC current gain
IC = 15 mA; VCE = 10 V
65
90
135
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
0.6
−
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
0.9
−
pF
−
0.35
−
pF
−
GHz
−
14
−
dB
IC = 15 mA; VCE = 10 V;
f = 2 GHz; Tamb = 25 °C
−
8
−
dB
IC = 5 mA; VCE = 10 V;
f = 1 GHz; Γs = Γopt
−
2
−
dB
IC = 5 mA; VCE = 10 V;
f = 2 GHz; Γs = Γopt
−
3
−
dB
feedback capacitance
IC = 0; VCE = 10 V; f = 1 MHz
transition frequency
IC = 15 mA; VCE = 10 V; f = 500 MHz 3.5
GUM
maximum unilateral power
gain; note 1
IC = 15 mA; VCE = 10 V;
f = 1 GHz; Tamb = 25 °C
noise figure
nA
5
Cre
fT
F
50
Note
s 21 2
dB.
1. GUM is the maximum unilateral power gain, assuming s12 is zero and G UM = 10 log -----------------------------------------------------------( 1 – s 11 2 ) ( 1 – s 22 2 )
Rev. 03 - 12 March 2008
4 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
MCD074
120
BFR92AW
MGC883
1.0
handbook, halfpage
C re
(pF)
h FE
0.8
80
0.6
0.4
40
0.2
0
0
0
10
20
I C (mA)
VCE = 10 V.
Fig.3
0
30
4
8
12
16
20
VCB (V)
IC = 0; f = 1 MHz.
DC current gain as a function of collector
current; typical values.
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
MGC884
6
handbook, halfpage
f
T
(GHz)
4
2
0
1
10
I C (mA)
10 2
VCE = 5 V; f = 500 MHz; Tamb = 25 °C.
Fig.5
Transition frequency as a function of
collector current; typical values.
Rev. 03 - 12 March 2008
5 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AW
MGC885
30
MGC886
30
handbook, halfpage
handbook, halfpage
gain
gain
(dB)
(dB)
MSG
20
20
GUM
MSG
GUM
10
10
0
0
5
10
15
0
20
0
5
10
15
I C (mA)
VCE = 10 V; f = 500 MHz.
Fig.6
VCE = 10 V; f = 1 GHz.
Gain as a function of collector current;
typical values.
Fig.7
MGC887
50
Gain as a function of collector current;
typical values.
MGC888
50
handbook, halfpage
handbook, halfpage
gain
(dB)
20
I C (mA)
gain
GUM
(dB)
GUM
40
40
MSG
30
MSG
30
20
20
10
10
Gmax
Gmax
0
0
10
10
2
10
3
f (MHz)
10
VCE = 10 V; IC = 5 mA.
Fig.8
Gain as a function of frequency;
typical values.
4
10
10
2
10
3
f (MHz)
10
4
VCE = 10 V; IC = 15 mA.
Fig.9
Rev. 03 - 12 March 2008
Gain as a function of frequency;
typical values.
6 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AW
MGC889
6
MGC890
6
handbook, halfpage
handbook, halfpage
F
(dB)
F
(dB)
f = 2 GHz
4
4
IC = 15 mA
1 GHz
10 mA
500 MHz
5 mA
2
2
0
1
10
I C (mA)
0
102
10 2
VCE = 10 V.
103
f (MHz)
104
VCE = 10 V.
Fig.10 Minimum noise figure as a function of
collector current; typical values.
Fig.11 Minimum noise figure as a function of
frequency; typical values.
90 o
1.0
handbook, full pagewidth
1
F = 4 dB
135 o
0.5
F = 3 dB
2
45 o
0.8
0.6
F = 2 dB
0.2
180 o
0.2
0
0.4
5
0.5
1
0.2
F min = 1.6 dB
Γ opt
2
5
0o
0
5
0.2
0.5
2
135 o
45 o
1
MGC891
1.0
90 o
f = 500 MHz; VCE = 10 V; IC = 5 mA; Zo = 50 Ω.
Fig.12 Common emitter noise figure circles; typical values.
Rev. 03 - 12 March 2008
7 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AW
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
0.6
(4)
(2) (3)
0.2
(5)
180 o
(1)
(6)
0.2
0
0.4
5
0.5
1
0.2
2
5
0o
0
(7)
(1)
(2)
(3)
(4)
(5)
(8)
0.2
Γopt; Fmin = 2.1 dB.
F = 2.5 dB.
F = 3 dB.
F = 4 dB.
Γms; Gmax = 15.7 dB.
5
0.5
2
135 o
(6) G = 15 dB.
(7) G = 14 dB.
(8) G = 13 dB.
45 o
1
MGC892
1.0
90 o
f = 1 GHz; VCE = 10 V; IC = 5 mA; Zo = 50 Ω.
Fig.13 Common emitter noise figure circles; typical values.
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
(4)
0.6
(3)
(2)
0.2
0.4
5
0.2
(1)
180 o
0.2
0
0.5
1
2
5
0o
(5)
0.2
(1) Γopt; Fmin = 3 dB.
(2) F = 3.5 dB.
(3) F = 4 dB.
(4) F = 5 dB.
(5) Γms; Gmax = 9.1 dB.
(6) G = 8 dB.
(7) G = 7 dB.
(8) G = 6 dB.
f = 2 GHz; VCE = 10 V; IC = 5 mA; Zo = 50 Ω.
0
5
(6)
(7)
(8)
0.5
2
135 o
45 o
1
MGC893
1.0
90 o
Fig.14 Common emitter noise figure circles; typical values.
Rev. 03 - 12 March 2008
8 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AW
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
3 GHz
180 o
0.2
0
0.5
0.2
1
2
5
0o
0
40 MHz
5
0.2
0.5
2
135 o
45 o
1
MGC894
1.0
90 o
VCE = 10 V; IC = 15 mA; Zo = 50 Ω.
Fig.15 Common emitter input reflection coefficient (s11); typical values.
90 o
handbook, full pagewidth
135 o
45 o
40 MHz
180 o
50
40
30
20
3 GHz
0o
10
135 o
45 o
90 o
MGC895
VCE = 10 V; IC = 15 mA.
Fig.16 Common emitter forward transmission coefficient (s21); typical values.
Rev. 03 - 12 March 2008
9 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AW
90 o
handbook, full pagewidth
3 GHz
135 o
45 o
40 MHz
180 o
0.25
0.20
0.15
0.10
0o
0.05
135 o
45 o
90 o
MGC896
VCE = 10 V; IC = 15 mA.
Fig.17 Common emitter reverse transmission coefficient (s12); typical values.
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
0.2
180 o
0.2
0
0.5
1
2
5
0o
0
40 MHz
3 GHz
0.2
0.5
5
2
135 o
45 o
1
MGC897
1.0
90 o
VCE = 10 V; IC = 15 mA; Zo = 50 Ω.
Fig.18 Common emitter output reflection coefficient (s22); typical values.
Rev. 03 - 12 March 2008
10 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AW
PACKAGE OUTLINE
2.2
1.8
handbook, full pagewidth
1.35
1.15
A
B
X
0.25
0.10
2.2
2.0
0.2 M B
3
0.2
1.0
0.8 0.1
0.0
0.40
0.30
1
0.65
1.1
max
2
0.2 M A
detail X
1.3
0.3
0.1
MBC871
Dimensions in mm.
Fig.19 SOT323.
Rev. 03 - 12 March 2008
11 of 13
BFR92AW
NXP Semiconductors
NPN 5 GHz wideband transistor
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Rev. 03 - 12 March 2008
12 of 13
BFR92AW
NXP Semiconductors
NPN 5 GHz wideband transistor
Revision history
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BFR92AW_N_3
20080312
Product data sheet
-
BFR92AW_2
Modifications:
•
Quick reference data and Characteristics Table; DC current gain value changed
BFR92AW_2
19950918
Product specification
-
BFR92AW_1
BFR92AW_1
19921001
-
-
-
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 12 March 2008
Document identifier: BFR92AW_N_3
Similar pages