BFR92AW NPN 5 GHz wideband transistor Rev. 03 — 12 March 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) [email protected] use [email protected] (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via [email protected]). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. The BFR92AW uses the same crystal as the SOT23 version, BFR92A. • Gold metallization ensures excellent reliability • SOT323 (S-mini) package. handbook, 2 columns PINNING APPLICATIONS It is designed for use in RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz. PIN DESCRIPTION 1 base 2 emitter 3 collector 3 1 2 Top view MBC870 Marking code: P2. Fig.1 SOT323 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 20 V VCEO collector-emitter voltage open base − − 15 V IC collector current (DC) − − 25 mA Ptot total power dissipation up to Ts = 93 °C; note 1 − − 300 mW hFE current gain IC = 15 mA; VCE = 10 V 65 90 135 Cre feedback capacitance IC = 0; VCE = 10 V; f = 1 MHz; Tamb = 25 °C − 0.35 − pF fT transition frequency IC = 15 mA; VCE = 10 V; f = 500 MHz 3.5 5 − GHz GUM maximum unilateral power gain IC = 15 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 °C − 14 − dB IC = 15 mA; VCE = 10 V; f = 2 GHz; Tamb = 25 °C − 8 − dB IC = 5 mA; VCE = 10 V; f = 1 GHz; Γs = Γopt − 2 − dB − − 150 °C F noise figure Tj junction temperature Note 1. Ts is the temperature at the soldering point of the collector pin. Rev. 03 - 12 March 2008 2 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 2 V IC collector current (DC) − 25 mA Ptot total power dissipation − 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C up to Ts = 93 °C; see Fig.2; note 1 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS up to Ts = 93 °C; note 1 thermal resistance from junction to soldering point VALUE UNIT 190 K/W Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin. MLB540 400 P tot (mW) 300 200 100 0 0 50 100 150 200 T s ( o C) Fig.2 Power derating curve Rev. 03 - 12 March 2008 3 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW CHARACTERISTICS Tj = 25 °C (unless otherwise specified). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector leakage current IE = 0; VCB = 10 V − − hFE DC current gain IC = 15 mA; VCE = 10 V 65 90 135 Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 0.6 − pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 0.9 − pF − 0.35 − pF − GHz − 14 − dB IC = 15 mA; VCE = 10 V; f = 2 GHz; Tamb = 25 °C − 8 − dB IC = 5 mA; VCE = 10 V; f = 1 GHz; Γs = Γopt − 2 − dB IC = 5 mA; VCE = 10 V; f = 2 GHz; Γs = Γopt − 3 − dB feedback capacitance IC = 0; VCE = 10 V; f = 1 MHz transition frequency IC = 15 mA; VCE = 10 V; f = 500 MHz 3.5 GUM maximum unilateral power gain; note 1 IC = 15 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 °C noise figure nA 5 Cre fT F 50 Note s 21 2 dB. 1. GUM is the maximum unilateral power gain, assuming s12 is zero and G UM = 10 log -----------------------------------------------------------( 1 – s 11 2 ) ( 1 – s 22 2 ) Rev. 03 - 12 March 2008 4 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor MCD074 120 BFR92AW MGC883 1.0 handbook, halfpage C re (pF) h FE 0.8 80 0.6 0.4 40 0.2 0 0 0 10 20 I C (mA) VCE = 10 V. Fig.3 0 30 4 8 12 16 20 VCB (V) IC = 0; f = 1 MHz. DC current gain as a function of collector current; typical values. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. MGC884 6 handbook, halfpage f T (GHz) 4 2 0 1 10 I C (mA) 10 2 VCE = 5 V; f = 500 MHz; Tamb = 25 °C. Fig.5 Transition frequency as a function of collector current; typical values. Rev. 03 - 12 March 2008 5 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW MGC885 30 MGC886 30 handbook, halfpage handbook, halfpage gain gain (dB) (dB) MSG 20 20 GUM MSG GUM 10 10 0 0 5 10 15 0 20 0 5 10 15 I C (mA) VCE = 10 V; f = 500 MHz. Fig.6 VCE = 10 V; f = 1 GHz. Gain as a function of collector current; typical values. Fig.7 MGC887 50 Gain as a function of collector current; typical values. MGC888 50 handbook, halfpage handbook, halfpage gain (dB) 20 I C (mA) gain GUM (dB) GUM 40 40 MSG 30 MSG 30 20 20 10 10 Gmax Gmax 0 0 10 10 2 10 3 f (MHz) 10 VCE = 10 V; IC = 5 mA. Fig.8 Gain as a function of frequency; typical values. 4 10 10 2 10 3 f (MHz) 10 4 VCE = 10 V; IC = 15 mA. Fig.9 Rev. 03 - 12 March 2008 Gain as a function of frequency; typical values. 6 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW MGC889 6 MGC890 6 handbook, halfpage handbook, halfpage F (dB) F (dB) f = 2 GHz 4 4 IC = 15 mA 1 GHz 10 mA 500 MHz 5 mA 2 2 0 1 10 I C (mA) 0 102 10 2 VCE = 10 V. 103 f (MHz) 104 VCE = 10 V. Fig.10 Minimum noise figure as a function of collector current; typical values. Fig.11 Minimum noise figure as a function of frequency; typical values. 90 o 1.0 handbook, full pagewidth 1 F = 4 dB 135 o 0.5 F = 3 dB 2 45 o 0.8 0.6 F = 2 dB 0.2 180 o 0.2 0 0.4 5 0.5 1 0.2 F min = 1.6 dB Γ opt 2 5 0o 0 5 0.2 0.5 2 135 o 45 o 1 MGC891 1.0 90 o f = 500 MHz; VCE = 10 V; IC = 5 mA; Zo = 50 Ω. Fig.12 Common emitter noise figure circles; typical values. Rev. 03 - 12 March 2008 7 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 (4) (2) (3) 0.2 (5) 180 o (1) (6) 0.2 0 0.4 5 0.5 1 0.2 2 5 0o 0 (7) (1) (2) (3) (4) (5) (8) 0.2 Γopt; Fmin = 2.1 dB. F = 2.5 dB. F = 3 dB. F = 4 dB. Γms; Gmax = 15.7 dB. 5 0.5 2 135 o (6) G = 15 dB. (7) G = 14 dB. (8) G = 13 dB. 45 o 1 MGC892 1.0 90 o f = 1 GHz; VCE = 10 V; IC = 5 mA; Zo = 50 Ω. Fig.13 Common emitter noise figure circles; typical values. 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 (4) 0.6 (3) (2) 0.2 0.4 5 0.2 (1) 180 o 0.2 0 0.5 1 2 5 0o (5) 0.2 (1) Γopt; Fmin = 3 dB. (2) F = 3.5 dB. (3) F = 4 dB. (4) F = 5 dB. (5) Γms; Gmax = 9.1 dB. (6) G = 8 dB. (7) G = 7 dB. (8) G = 6 dB. f = 2 GHz; VCE = 10 V; IC = 5 mA; Zo = 50 Ω. 0 5 (6) (7) (8) 0.5 2 135 o 45 o 1 MGC893 1.0 90 o Fig.14 Common emitter noise figure circles; typical values. Rev. 03 - 12 March 2008 8 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 3 GHz 180 o 0.2 0 0.5 0.2 1 2 5 0o 0 40 MHz 5 0.2 0.5 2 135 o 45 o 1 MGC894 1.0 90 o VCE = 10 V; IC = 15 mA; Zo = 50 Ω. Fig.15 Common emitter input reflection coefficient (s11); typical values. 90 o handbook, full pagewidth 135 o 45 o 40 MHz 180 o 50 40 30 20 3 GHz 0o 10 135 o 45 o 90 o MGC895 VCE = 10 V; IC = 15 mA. Fig.16 Common emitter forward transmission coefficient (s21); typical values. Rev. 03 - 12 March 2008 9 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW 90 o handbook, full pagewidth 3 GHz 135 o 45 o 40 MHz 180 o 0.25 0.20 0.15 0.10 0o 0.05 135 o 45 o 90 o MGC896 VCE = 10 V; IC = 15 mA. Fig.17 Common emitter reverse transmission coefficient (s12); typical values. 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 0.2 180 o 0.2 0 0.5 1 2 5 0o 0 40 MHz 3 GHz 0.2 0.5 5 2 135 o 45 o 1 MGC897 1.0 90 o VCE = 10 V; IC = 15 mA; Zo = 50 Ω. Fig.18 Common emitter output reflection coefficient (s22); typical values. Rev. 03 - 12 March 2008 10 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW PACKAGE OUTLINE 2.2 1.8 handbook, full pagewidth 1.35 1.15 A B X 0.25 0.10 2.2 2.0 0.2 M B 3 0.2 1.0 0.8 0.1 0.0 0.40 0.30 1 0.65 1.1 max 2 0.2 M A detail X 1.3 0.3 0.1 MBC871 Dimensions in mm. Fig.19 SOT323. Rev. 03 - 12 March 2008 11 of 13 BFR92AW NXP Semiconductors NPN 5 GHz wideband transistor Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. 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Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Rev. 03 - 12 March 2008 12 of 13 BFR92AW NXP Semiconductors NPN 5 GHz wideband transistor Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BFR92AW_N_3 20080312 Product data sheet - BFR92AW_2 Modifications: • Quick reference data and Characteristics Table; DC current gain value changed BFR92AW_2 19950918 Product specification - BFR92AW_1 BFR92AW_1 19921001 - - - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 12 March 2008 Document identifier: BFR92AW_N_3