Data Sheet

BFR93AR
NPN 6 GHz wideband transistor
Rev. 01 — 30 November 2006
Product data sheet
1. Product profile
1.1 General description
NPN wideband transistor in a plastic SOT23 package.
PNP complement: BFT93.
1.2 Features
n Very high power gain
n Low noise figure
n Very low intermodulation distortion
1.3 Applications
n RF wideband amplifiers and oscillators
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
open emitter
Min
Typ
Max
Unit
VCBO
collector-base voltage
-
-
15
V
VCEO
collector-emitter voltage open base
-
-
12
V
IC
collector current
-
-
35
mA
Ptot
total power dissipation
Tsp ≤ 95 °C
-
-
300
mW
Cre
feedback capacitance
IC = 0 mA; VCE = 5 V; f = 1 MHz;
-
0.6
-
pF
fT
transition frequency
IC = 30 mA; VCE = 5 V;
f = 500 MHz;
-
6
-
GHz
GUM
unilateral power gain
IC = 30 mA; VCE = 8 V;
Tamb = 25 °C
f = 1 GHz
-
13
-
dB
f = 2 GHz
-
7
-
dB
NF
noise figure
IC = 5 mA; VCE = 8 V; f = 1 GHz;
ΓS = Γopt; Tamb = 25 °C
-
1.9
-
dB
VO
output voltage
IMD = −60 dB; IC = 30 mA;
VCE = 8 V; RL = 75 Ω;
Tamb = 25 °C;
fp + fq − fr = 793.25 MHz
-
425
-
mV
BFR93AR
NXP Semiconductors
NPN 6 GHz wideband transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
emitter
2
base
3
collector
Simplified outline
Symbol
3
3
2
1
1
2
sym026
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BFR93AR
-
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking
Type number
Marking code
Description
BFR93AR
*R5
* = p : made in Hong Kong
* = w : made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
15
V
VCEO
collector-emitter voltage
open base
-
12
V
VEBO
emitter-base voltage
open collector
-
2
V
IC
collector current
-
35
mA
-
300
mW
Tsp ≤ 95 °C; see Figure 2
Ptot
total power dissipation
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
+175
°C
[1]
Tsp is the temperature at the solder point of the collector pin.
BFR93AR_1
Product data sheet
[1]
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 30 November 2006
2 of 13
BFR93AR
NXP Semiconductors
NPN 6 GHz wideband transistor
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
thermal resistance from junction to solder point
Tsp ≤ 95 °C
Rth(j-sp)
[1]
[1]
Typ
Unit
260
K/W
Tsp is the temperature at the solder point of the collector pin.
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off current
IE = 0 A; VCB = 5 V
-
-
50
nA
hFE
DC current gain
IC = 30 mA; VCE = 5 V; see Figure 3
40
90
-
Cc
collector capacitance
IE = ie = 0 A; VCB = 5 V; f = 1 MHz;
see Figure 4
-
0.7
-
pF
Ce
emitter capacitance
IC = ic = 0 A; VEB = 0.5 V; f = 1 MHz
-
1.9
-
pF
Cre
feedback capacitance
IC = ic = 0 A; VCE = 5 V; f = 1 MHz;
Tamb = 25 °C
-
0.6
-
pF
fT
transition frequency
IC = 30 mA; VCE = 5 V; f = 500 MHz;
see Figure 5
4.5
6
-
GHz
GUM
unilateral power gain
IC = 30 mA; VCE = 8 V; Tamb = 25 °C;
see Figure 6 to Figure 9
f = 1 GHz
-
13
-
dB
f = 2 GHz
-
7
-
dB
-
1.9
-
dB
NF
[1]
IC = 5 mA; VCE = 8 V; ΓS = Γopt;
Tamb = 25 °C; see Figure 12 and
Figure 13
noise figure
f = 1 GHz
f = 2 GHz
VO
IMD2
[1]
-
3
-
dB
output voltage
[2][3]
-
425
-
mV
second-order intermodulation
distortion
[2][4]
-
−50
-
dB
see Figure 15
GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S 21
G UM = 10 log ------------------------------------------------------- dB.
2
2
( 1 – S 11 ) ( 1 – S 22 )
[2]
Measured on the same crystal in a SOT37 package (BFR91A).
[3]
IMD = −60 dB (DIN 45004B); IC = 30 mA; VCE = 8 V; RL = 75 Ω; Tamb = 25 °C;
Vp = VO at IMD = −60 dB; fp = 795.25 MHz;
Vq = VO −6 dB at fq = 803.25 MHz;
Vr = VO −6 dB at fr = 805.25 MHz;
measured at fp + fq − fr = 793.25 MHz
[4]
IC = 30 mA; VCE = 8 V; RL = 75 Ω; Tamb = 25 °C;
Vp = 200 mV at fp = 250 MHz;
Vq = 200 mV at fp = 560 MHz;
measured at fp + fq = 810 MHz
BFR93AR_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 30 November 2006
3 of 13
BFR93AR
NXP Semiconductors
NPN 6 GHz wideband transistor
1.5 nF
+VBB
+VCC
1.5 nF
L3
10 kΩ
L2
1 nF
1 nF
75 Ω
input
L1
1 nF
270 Ω
75 Ω
output
DUT
3.3 pF
18 Ω
0.68 pF
mbb251
L1 = L3 = 5 µH choke.
L2 = 3 turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm.
Fig 1. Intermodulation distortion and second harmonic MATV test circuit
mra702
400
Ptot
(mW)
mcd087
120
hFE
300
80
200
40
100
0
0
0
50
100
150
200
0
10
Tsp (°C)
20
IC
(mA)
30
VCE = 5 V; Tj = 25 °C.
Fig 2. Power derating curve
Fig 3. DC current gain as a function of collector
current
BFR93AR_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 30 November 2006
4 of 13
BFR93AR
NXP Semiconductors
NPN 6 GHz wideband transistor
mbb252
1
Cc
(pF)
mcd089
8
fT
(GHz)
0.8
6
0.6
4
0.4
2
0.2
0
0
0
4
8
12
16
VCB (V)
0
10
20
30
40
(mA)
IC
IE = ie = 0 mA; f = 1 MHz; Tj = 25 °C.
VCE = 2 V; f = 500 MHz; Tj = 25 °C.
Fig 4. Collector capacitance as a function of
collector-base voltage; typical values
Fig 5. Transition frequency as a function of collector
current; typical values
mbb255
30
gain
(dB)
mbb256
30
gain
(dB)
MSG
20
20
MSG
GUM
GUM
10
10
0
0
10
20
30
IC (mA)
40
VCE = 8 V; f = 500 MHz.
0
0
20
30
IC (mA)
40
VCE = 8 V; f = 1 GHz.
Fig 6. Gain as a function of collector current; typical
values
Fig 7. Gain as a function of collector current; typical
values
BFR93AR_1
Product data sheet
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© NXP B.V. 2006. All rights reserved.
Rev. 01 — 30 November 2006
5 of 13
BFR93AR
NXP Semiconductors
NPN 6 GHz wideband transistor
mbb257
50
mbb258
50
gain
gain
(dB)
(dB)
40
40
GUM
GUM
30
30
MSG
MSG
20
20
10
10
Gmax
Gmax
0
0
102
10
103
4
f (MHz) 10
10
IC = 10 mA; VCE = 8 V.
102
103
f (MHz)
104
IC = 30 mA; VCE = 8 V.
Fig 8. Gain as a function of frequency; typical values
Fig 9. Gain as a function of frequency; typical values
mbb253
40
BS
BS
mbb254
30
NF = 4.0 dB
(mS)
20
(mS)
20
3.5
10
1.6
2.0
2.5
3.0
3.0
NF = 3.5 dB
0
2.5
2.3
0
−10
−20
−20
−40
−30
0
20
40
60
GS
80
(mS)
IC = 4 mA; VCE = 8 V; f = 800 MHz; Tamb = 25 °C.
Fig 10. Circles of constant noise figure; typical values
0
40
GS
(mS)
60
IC = 4 mA; VCE = 8 V; f = 800 MHz; Tamb = 25 °C.
Fig 11. Circles of constant noise figure; typical values
BFR93AR_1
Product data sheet
20
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 30 November 2006
6 of 13
BFR93AR
NXP Semiconductors
NPN 6 GHz wideband transistor
mcd094
4
NF
(dB)
mcd095
4
NF
(dB)
f = 2 GHz
3
3
1 GHz
500 MHz
2
2
IC = 30 mA
10 mA
1
1
0
1
10
IC
(mA)
5 mA
0
102
102
VCE = 8 V.
103
f (MHz)
104
VCE = 8 V.
Fig 12. Minimum noise figure as a function of collector
current; typical values
mbb263
−40
IMD
(dB)
Fig 13. Minimum noise figure as a function of
frequency; typical values
mbb264
−30
IMD2
(dB)
−45
−35
−50
−40
−55
−45
−60
−50
−65
0
10
20
30
IC (mA)
40
VCE = 8 V; VO = 425 mV (52.6 dBmV);
fp + fq − fr = 793.25 MHz; Tamb = 25 °C.
Measured in MATV test circuit; see Figure 1.
Fig 14. Intermodulation distortion; typical values
−55
0
20
30
IC (mA)
40
VCE = 8 V; VO = 200 mV (46 dBmV);
fp + fq − fr = 810 MHz; Tamb = 25 °C.
Measured in MATV test circuit; see Figure 1.
Fig 15. Second order intermodulation distortion;
typical values
BFR93AR_1
Product data sheet
10
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 30 November 2006
7 of 13
BFR93AR
NXP Semiconductors
NPN 6 GHz wideband transistor
1
0.5
2
0.2
5
0.5
1200
0.2 800
+j
0
10
1000
1
2
5
10
∞
500
−j
10
200
0.2
5
100 MHz
2
0.5
mbb259
1
IC = 30 mA; VCE = 8 V; ZO = 50 Ω;Tamb = 25 °C.
Fig 16. Common emitter input reflection coefficient (S11)
90°
120°
60°
100
200
150°
30°
500
1000
800
1200 MHz
180°
+ϕ
10
20
30
0°
−ϕ
30°
150°
60°
120°
90°
mbb261
IC = 30 mA; VCE = 8 V; Tamb = 25 °C.
Fig 17. Common emitter forward transmission coefficient (S21)
BFR93AR_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 30 November 2006
8 of 13
BFR93AR
NXP Semiconductors
NPN 6 GHz wideband transistor
90°
120°
60°
1200
1000
800
150°
30°
500
100 MHz
200
+ϕ
0.05
180°
0.1
0.15
0°
−ϕ
30°
150°
60°
120°
mbb262
90°
IC = 30 mA; VCE = 8 V; Tamb = 25 °C.
Fig 18. Common emitter reverse transmission coefficient (S12)
1
0.5
2
0.2
5
10
+j
0
0.2
0.5
1
2
5
10
∞
1000 800
500
200
1200
−j
10
5
100 MHz
0.2
2
0.5
1
mbb260
IC = 30 mA; VCE = 8 V; ZO = 50 Ω;Tamb = 25 °C.
Fig 19. Common emitter output reflection coefficient (S22)
BFR93AR_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 30 November 2006
9 of 13
BFR93AR
NXP Semiconductors
NPN 6 GHz wideband transistor
8. Package outline
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
SOT23
JEDEC
JEITA
TO-236AB
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
Fig 20. Package outline SOT23
BFR93AR_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 30 November 2006
10 of 13
BFR93AR
NXP Semiconductors
NPN 6 GHz wideband transistor
9. Abbreviations
Table 8.
Abbreviations
Acronym
Description
NPN
Negative Positive Negative
PNP
Positive Negative Positive
RF
Radio Frequency
MATV
Master Antenna Television
10. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BFR93AR_1
20061130
Product data sheet
-
-
BFR93AR_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 30 November 2006
11 of 13
BFR93AR
NXP Semiconductors
NPN 6 GHz wideband transistor
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
BFR93AR_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 30 November 2006
12 of 13
BFR93AR
NXP Semiconductors
NPN 6 GHz wideband transistor
13. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2006.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 30 November 2006
Document identifier: BFR93AR_1
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