Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFT93
PNP 5 GHz wideband transistor
Product specification
November 1992
NXP Semiconductors
Product specification
PNP 5 GHz wideband transistor
DESCRIPTION
BFT93
PINNING
PNP transistor in a plastic SOT23
envelope.
It is primarily intended for use in RF
wideband amplifiers, such as in aerial
amplifiers, radar systems,
oscilloscopes, spectrum analyzers,
etc. The transistor features low
intermodulation distortion and high
power gain; due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
PIN
DESCRIPTION
Code: X1p
1
base
2
emitter
3
collector
3
lfpage
1
2
Top view
MSB003
Fig.1 SOT23.
NPN complements are BFR93 and
BFR93A.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter

15
V
VCEO
collector-emitter voltage
open base

12
V
Ic
DC collector current

35
mA
Ptot
total power dissipation
up to Ts = 95 C; note 1

300
mW
fT
transition frequency
IC = 30 mA; VCE = 5 V; f = 500 MHz;
Tj = 25 C
5

GHz
Cre
feedback capacitance
IC = 2 mA; VCE = 5 V; f = 1 MHz
1

pF
GUM
maximum unilateral power gain IC = 30 mA; VCE = 5 V; f = 500 MHz;
Tamb = 25 C
16.5

dB
F
noise figure
IC = 10 mA; VCE = 5 V; f = 500 MHz;
Tamb = 25 C
2.4

dB
Vo
output voltage
dim = 60 dB; IC = 30 mA;
VCE = 5 V; RL = 75 ;
f(pqr) = 493.25 MHz
300

mV
Note
1. Ts is the temperature at the soldering point of the collector tab.
November 1992
2
NXP Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT93
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter

15
V
VCEO
collector-emitter voltage
open base

12
V
VEBO
emitter-base voltage
open collector

2
V
IC
DC collector current

35
mA
ICM
peak collector current
f  1 MHz

50
mA
Ptot
total power dissipation
up to Ts = 95 C; note 1

300
mW
Tstg
storage temperature
65
150
C
Tj
junction temperature

175
C
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to Ts = 70 C; (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
November 1992
3
THERMAL RESISTANCE
260 K/W
NXP Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT93
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
ICBO
collector cut-off current
IE = 0; VCB = 5 V


50
hFE
DC current gain
IC = 30 mA; VCE = 5 V
20
50

fT
transition frequency
IC = 30 mA; VCE = 5 V;
f = 500 MHz

5

UNIT
nA
GHz
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz

0.95

pF
Ce
emitter capacitance
Ic = ic = 0; VEB = 0.5 V; f = 1 MHz

1.8

pF
Cre
feedback capacitance
IC = 2 mA; VCE = 5 V; f = 1 MHz

1

pF
GUM
maximum unilateral power gain IC = 30 mA; VCE = 5 V;
(note 1)
f = 500 MHz; Tamb = 25 C

16.5

dB
F
noise figure
IC = 10 mA; VCE = 5 V;
f = 500 MHz; Tamb = 25 C

2.4

dB
Vo
output voltage
see Fig.2 and note 2

300

mV
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
G UM
S 21
- dB.
= 10 log --------------------------------------------------------2
2
 1 – S 11   1 – S 22 
2. dim = 60 dB (DIN 45004B); IC = 30 mA; VCE = 5 V; RL = 75 ;
Vp = Vo at dim = 60 dB; fp = 495.25 MHz;
Vq = Vo 6 dB; fq = 503.25 MHz;
Vr = Vo 6 dB; fr = 505.25 MHz;
measured at f(pqr) = 493.25 MHz.
November 1992
4
NXP Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT93
MEA382
60
handbook, halfpage
24 V
handbook, halfpage
h FE
560 Ω
L3
390 Ω
1.2 kΩ
40
240 Ω
L2
680 pF
680 pF
output
75 Ω
L1
680 pF
20
input
75 Ω
DUT
16 Ω
MEA383
10
0
10
20
30
40
–I C (mA)
L2 = L3 = 5 H Ferroxcube choke, catalogue
number 3122 108 20150.
L1 = 4 turns 0.35 mm copper wire; winding pitch
1 mm; internal diameter 4 mm.
VCE = 5 V; Tj = 25 C.
Fig.2 Intermodulation distortion test circuit.
Fig.3
DC current gain as a function of collector
current.
MEA925
MEA381
2.0
Cc
(pF)
6
handbook, halfpage
handbook, halfpage
fT
(GHz)
1.6
4
1.2
0.8
2
0.4
0
0
0
4
8
12
16
20
0
10
20
V CB (V)
IE = ie = 0; f = 1 MHz; Tj = 25 C.
VCE = 5 V; f = 500 MHz; Tj = 25 C.
Fig.4
Fig.5
Collector capacitance as a function of
collector-base voltage.
November 1992
5
30
–I C (mA)
Transition frequency as a function of
collector current.
40
NXP Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT93
MEA924
MEA923
8
5
handbook, halfpage
handbook, halfpage
F
(dB)
F
(dB)
4
6
3
4
2
2
1
0
10
0
20
30
40
0
10 –1
50
I C (mA)
1
f (GHz)
VCE = 5 V; Zs = opt.; f = 500 MHz; Tamb = 25 C.
IC = 2 mA; VCE = 5 V; Zs = opt.; Tamb = 25 C.
Fig.6
Fig.7
Minimum noise figure as a function of
collector current.
November 1992
6
10
Minimum noise figure as a function of
frequency.
NXP Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT93
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
November 1992
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
7
NXP Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT93
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
DEFINITIONS
Product specification  The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
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product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
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DISCLAIMERS
Limited warranty and liability  Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
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shall have no liability for the consequences of use of such
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any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
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specified use without further testing or modification.
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Semiconductors products, and NXP Semiconductors
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Semiconductors product is suitable and fit for the
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the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
November 1992
8
NXP Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT93
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described herein may be subject to export control
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NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
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products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
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Quick reference data  The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products  Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
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NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.
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November 1992
9
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Printed in The Netherlands
R77/02/pp10
Date of release: November 1992