Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFT93W
PNP 4 GHz wideband transistor
Product specification
Supersedes data of November 1992
March 1994
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
FEATURES
DESCRIPTION
 High power gain
Silicon PNP transistor in a plastic,
SOT323 (S-mini) package. The
BFT93W uses the same crystal as the
SOT23 version, BFT93.
 Gold metallization ensures
excellent reliability
 SOT323 (S-mini) package.
1
PINNING
APPLICATIONS
3
handbook, 2 columns
2
Top view
It is intended as a general purpose
transistor for wideband applications
up to 2 GHz.
PIN
MBC870
DESCRIPTION
1
base
2
emitter
3
collector
BFT93W Marking code: X1.
Fig.1 SOT323.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter


15
V
VCEO
collector-emitter voltage
open base


12
V
IC
collector current (DC)


50
mA
Ptot
total power dissipation
up to Ts = 93 C; note 1


300
mW
hFE
DC current gain
IC = 30 mA; VCE = 5 V
20
50

Cre
feedback capacitance
IC = 0; VCE = 5 V; f = 1 MHz

1

pF
fT
transition frequency
IC = 30 mA; VCE = 5 V;
f = 500 MHz

4

GHz
GUM
maximum unilateral power gain IC = 30 mA; VCE = 5 V;
f = 500 MHz; Tamb = 25 C

15.5

dB
F
noise figure

2.4

dB
Tj
junction temperature


150
C
IC = 10 mA; VCE = 5 V;
f = 500 MHz
Note
1. Ts is the temperature at the soldering point of the collector pin.
March 1994
2
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter

15
V
VCEO
collector-emitter voltage
open base

12
V
VEBO
emitter-base voltage
open collector

2
V
IC
collector current (DC)

50
mA
Ptot
total power dissipation

300
mW
Tstg
storage temperature
65
+150
C
Tj
junction temperature

150
C
up to Ts = 93 C; note 1
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
up to Ts = 93 C; note 1
VALUE
UNIT
190
K/W
Note to the “Limiting values” and “Thermal characteristics”
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 C (unless otherwise specified).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 5 V


50
hFE
DC current gain
IC = 30 mA; VCE = 5 V

50

fT
transition frequency
IC = 30 mA; VCE = 5 V;
f = 500 MHz; Tamb = 25 C

4

GHz
Cc
collector capacitance
IE = ie = 0; VCB = 5 V;
f = 1 MHz

1.2

pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V;
f = 1 MHz

1.4

pF
Cre
feedback capacitance
IC = 0; VCE = 5 V;
f = 1 MHz

1

pF
GUM
maximum unilateral power
gain; note 1
IC = 30 mA; VCE = 5 V;
f = 500 MHz; Tamb = 25 C

15.5

dB
IC = 30 mA; VCE = 5 V;
f = 1 GHz; Tamb = 25 C

10

dB
s = opt; IC = 10 mA;
VCE = 5 V; f = 500 MHz

2.4

dB
s = opt; IC = 10 mA;
VCE = 5 V; f = 1 GHz

3

dB
F
noise figure
Note
nA
s 21 2
1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log -------------------------------------------------------dB.
 1 – s 11 2   1 – s 22 2 
March 1994
3
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
MLB424
400
MLB425
60
P tot
(mW)
h FE
300
40
200
20
100
0
0
0
50
100
150
200
T s ( o C)
0
10
20
30
40
I C (mA)
VCE = 5 V; Tj = 25 C.
Fig.2
Power derating as a function of the soldering
point temperature.
Fig.3
MLB426
2
6
1.6
fT
(GHz)
C re
(pF)
DC current gain as a function of collector
current, typical values.
MLB427
V CE =
10 V
5V
4
1.2
0.8
2
0.4
0
0
0
4
8
12
16
20
VCB (V)
1
March 1994
I C (mA)
10 2
f = 500 MHz; Tamb = 25 C.
IC = 0; f = 1 MHz.
Fig.4
10
Feedback capacitance as a function of
collector-base voltage, typical values.
Fig.5
4
Transition frequency as a function of
collector current, typical values.
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
MLB428
30
gain
gain
(dB)
(dB)
20
MLB429
30
20
MSG
G UM
MSG
10
G UM
10
0
0
10
20
30
0
40
0
10
20
30
I C (mA)
VCE = 5 V; f = 1 GHz.
VCE = 5 V; f = 500 MHz.
Fig.6
40
I C (mA)
Gain as a function of collector current,
typical values.
Fig.7
MLB430
50
Gain as a function of collector current,
typical values.
MLB431
50
gain
gain
(dB)
(dB)
40
40
G UM
30
G UM
MSG
MSG
30
20
20
10
10
G max
G max
0
0
10
10
2
10
3
f (MHz)
10
4
10
VCE = 5 V; IC = 10 mA.
Fig.8
March 1994
10
2
10
3
f (MHz)
10
VCE = 5 V; IC = 30 mA.
Gain as a function of frequency,
typical values.
Fig.9
5
Gain as a function of frequency,
typical values.
4
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
90 o
1.0
1
135 o
45 o
2
0.5
0.8
0.6
3 GHz
0.2
0.4
5
0.2
180 o
0.2
0
0.5
1
2
5
40 MHz
0.2
0.5
0
5
2
135 o
0o
45 o
1
MLB434
1.0
90 o
VCE = 10 V; IC = 30 mA.
Fig.10 Common emitter input reflection coefficient (s11), typical values.
90 o
135 o
45 o
40 MHz
180 o
50
40
30
20
10
0o
3 GHz
135 o
45 o
90 o
MLB435
VCE = 10 V; IC = 30 mA.
Fig.11 Common emitter forward transmission coefficient (s21), typical values.
March 1994
6
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
90 o
135 o
45 o
3 GHz
180 o
0.5
0.4
0.3
0.2
0.1
0o
40 MHz
135 o
45 o
90 o
MLB436
VCE = 10 V; IC = 30 mA.
Fig.12 Common emitter reverse transmission coefficient (s12), typical values.
90 o
1.0
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
0.2
180 o
0.2
0
0.5
1
2
5
3 GHz
0o
0
40 MHz
5
0.2
0.5
2
135 o
45 o
1
MLB437
1.0
90 o
VCE = 10 V; IC = 30 mA.
Fig.13 Common emitter output reflection coefficient (s22), typical values.
March 1994
7
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
MLB432
6
MLB433
6
F
(dB)
F
(dB)
IC =
30 mA
1 GHz
4
4
20 mA
500 MHz
10 mA
5 mA
2
2
0
1
10
I C (mA)
0
10 2
10 2
f (MHz)
10 4
VCE = 5 V.
VCE = 5 V.
Fig.14 Minimum noise figure as a function of
collector current, typical values.
March 1994
10 3
Fig.15 Minimum noise figure as a function of
frequency, typical values.
8
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
90 o
1.0
1
135 o
45 o
2
0.5
0.8
0.6
F min = 2.40 dB
0.2
Γ opt
180 o
0.2
0
0.5
0.4
5
0.2
1
2
5
0o
F = 3 dB
F = 4 dB
0.2
0
5
F = 5 dB
0.5
2
135 o
45 o
1
MLB438
1.0
90 o
VCE = 5 V; IC = 10 mA; f = 500 MHz; Zo = 50 .
Fig.16 Common emitter noise figure circles, typical values.
90 o
1.0
1
135 o
45 o
2
0.5
0.8
0.6
F min = 2.90 dB
0.2
0.4
5
0.2
Γ opt
180 o
0.2
0
0.5
1
2
5
0o
0
F = 3.5 dB
F = 4 dB
0.2
5
F = 5 dB
0.5
2
135 o
45 o
1
MLB439
90 o
VCE = 5 V; IC = 10 mA; f = 1 GHz; Zo = 50 .
Fig.17 Common emitter noise figure circles, typical values.
March 1994
9
1.0
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
SPICE parameters for the BFT93W crystal
SEQUENCE No. PARAMETER
VALUE
UNIT
SEQUENCE No. PARAMETER
VALUE
UNIT
1
IS
835.1
aA
36(1)
2
BF
48.56

37(1)
MJS
0.000

3
NF
1.000

38
FC
811.6
m
4
VAF
19.01
V
Note
5
IKF
146.8
mA
6
ISE
90.94
fA
1. These parameters have not been extracted, the
default values are shown.
7
NE
1.749

8
BR
12.18

9
NR
997.6
m
10
VAR
3.374
V
11
IKR
6.742
mA
12
ISC
23.42
fA
13
NC
1.449

14
RB
10.00

15
IRB
1.000
A
16
RBM
10.00

17
RE
200.0
m
18
RC
3.800

19(1)
XTB
0.000

20(1)
EG
1.110
EV
21(1)
XTI
3.000

22
CJE
1.570
pF
VJS
750.0
C cb
handbook, halfpage
L1
mV
LB
B
L2
B'
C'
E'
C be
C
Cce
LE
MBC964
L3
E
QLB = 50; QLE = 50; QLB,E(f) = QLB,E(f/Fc);
Fc = scaling frequency = 1 GHz.
23
VJE
600.0
mV
24
MJE
382.2
m
25
TF
14.85
ps
26
XTF
2.209

27
VTF
2.989
V
28
ITF
14.37
mA
Cbe
2
fF
29
PTF
0.000
deg
Ccb
100
fF
30
CJC
1.995
pF
Cce
100
fF
31
VJC
584.4
mV
L1
0.34
nH
32
MJC
281.3
m
L2
0.10
nH
33
XCJC
120.0
m
L3
0.34
nH
34
TR
3.000
ns
LB
0.60
nH
35(1)
CJS
0.000
F
LE
0.60
nH
March 1994
Fig.18 Package equivalent circuit SOT323.
List of components (see Fig.18).
DESIGNATION
10
VALUE
UNIT
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
Table 1
BFT93W
Common emitter scattering parameters: VCE = 5 V; IC = 5 mA.
s21
s12
s22
s11
f
(MHz) MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
11.294
10.079
8.082
6.355
5.116
4.266
3.653
165.0
147.7
126.7
113.1
104.1
97.5
92.2
0.023
0.050
0.076
0.090
0.099
0.107
78.5
64.5
51.2
45.1
42.9
42.8
0.945
0.834
0.631
0.491
0.403
0.349
0.551
20.5
49.0
88.0
113.6
130.5
141.8
150.5
0.113
43.7
700
0.546
157.1
3.193
87.7
0.120
800
0.543
162.7
2.838
83.9
900
0.541
167.6
2.551
80.4
1000
0.541
172.0
2.323
1200
0.549
179.4
1400
0.559
174.8
1600
0.565
1800
GUM
(dB)
0.316
12.3
27.8
44.0
52.8
58.5
62.5
65.2
34.5
28.3
22.5
19.1
16.6
14.8
13.3
44.9
0.293
66.8
12.0
0.127
46.2
0.277
67.7
10.9
0.133
47.6
0.263
68.1
9.9
77.4
0.140
49.1
0.249
68.7
9.1
1.975
71.7
0.153
51.6
0.223
71.8
7.7
1.737
66.4
0.168
53.8
0.212
78.3
6.6
170.3
1.555
61.7
0.183
55.2
0.215
84.5
5.7
0.566
165.6
1.420
57.7
0.197
56.8
0.220
87.5
4.9
1.310
54.2
4.3
40
100
200
300
400
500
0.759
0.711
0.630
0.586
0.566
0.557
600
2000
0.575
160.5
0.213
58.3
0.215
91.0
2200
0.594
156.3
1.217
51.1
0.228
59.7
0.208
98.1
3.8
2400
0.613
153.7
1.135
47.7
0.242
60.6
0.217
107.7
3.4
2600
0.623
151.4
1.064
44.8
0.255
60.9
0.242
114.1
2.9
2800
0.618
148.2
1.019
41.7
0.271
61.5
0.264
116.9
2.6
3000
0.621
144.5
0.975
39.3
0.289
61.9
0.275
119.3
2.2
Table 2
Noise data: VCE = 5 V; IC = 5 mA.
f
(MHz)
500
1000
March 1994
opt
Fmin
(dB)
(ratio)
(deg)
1.80
2.55
0.307
0.358
86.5
121.0
11
Rn
0.320
0.280
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
Table 3
BFT93W
Common emitter scattering parameters: VCE = 5 V; IC = 10 mA.
s11
s21
s12
s22
f
(MHz) MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
18.195
160.2
0.020
75.6
0.900
18.0
34.4
72.1
15.044
138.8
0.041
60.6
0.725
38.4
28.5
114.5
10.475
117.4
0.059
51.1
0.490
56.6
23.1
136.1
7.676
106.0
0.070
49.3
0.360
66.3
19.7
0.531
149.0
5.989
98.6
0.079
50.2
0.287
73.0
17.4
0.532
157.3
4.907
93.2
0.088
51.8
0.245
77.9
15.5
600
0.534
163.6
4.161
88.9
0.097
53.8
0.221
81.4
14.1
700
0.533
168.6
3.613
85.1
0.106
55.4
0.204
83.2
12.8
800
0.532
172.9
3.195
81.8
0.116
56.9
0.192
84.2
11.7
900
0.534
176.8
2.866
78.8
0.125
58.1
0.179
84.5
10.7
1000
0.535
179.7
2.603
76.2
0.135
59.3
0.167
85.3
9.9
1200
0.545
173.7
2.206
71.2
0.153
61.0
0.145
90.1
8.5
1400
0.557
169.2
1.931
66.6
0.172
62.0
0.140
98.7
7.4
1600
0.561
165.5
1.724
62.2
0.191
62.3
0.149
104.6
6.5
40
0.608
100
0.571
200
0.538
300
0.531
400
500
31.5
GUM
(dB)
1800
0.563
161.2
1.570
58.5
0.208
62.7
0.154
106.3
5.7
2000
0.574
156.6
1.447
55.2
0.227
63.2
0.150
109.4
5.0
2200
0.593
153.0
1.343
52.4
0.244
63.7
0.148
117.9
4.5
2400
0.612
150.6
1.251
49.2
0.260
64.0
0.165
127.5
4.1
2600
0.620
148.8
1.171
46.3
0.274
63.5
0.192
131.8
3.6
2800
0.616
146.0
1.122
43.2
0.290
63.3
0.213
132.1
3.3
3000
0.618
142.3
1.074
40.7
0.309
63.2
0.223
133.3
2.9
Table 4
Noise data: VCE = 5 V; IC = 10 mA.
f
(MHz)
500
1000
March 1994
opt
Fmin
(dB)
(ratio)
2.40
2.90
0.304
0.321
12
(deg)
94.7
136.9
Rn
0.430
0.270
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
Table 5
BFT93W
Common emitter scattering parameters: VCE = 5 V; IC = 20 mA.
s11
s21
s12
s22
f
(MHz) MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
GUM
(dB)
49.1
25.274
154.6
0.018
72.5
0.830
24.1
34.1
0.475
99.1
18.682
130.2
0.034
59.2
0.608
47.9
28.5
0.502
135.9
11.661
110.7
0.047
54.5
0.379
67.2
23.3
300
0.516
151.8
8.244
101.0
0.058
55.6
0.270
77.9
20.0
400
0.526
161.1
6.342
94.7
0.068
58.1
0.215
86.1
17.7
500
0.530
167.1
5.156
90.2
0.079
60.1
0.185
92.5
15.8
600
0.534
171.9
4.350
86.3
0.089
61.9
0.169
96.7
14.4
700
0.535
175.7
3.768
83.0
0.101
63.2
0.157
98.7
13.1
3.326
80.1
12.0
40
0.450
100
200
800
0.536
179.1
0.112
64.0
0.147
99.8
900
0.538
177.7
2.980
77.3
0.123
64.8
0.137
100.5
11.1
1000
0.541
174.9
2.703
74.9
0.134
65.4
0.127
101.9
10.2
1200
0.554
169.8
2.285
70.3
0.154
66.2
0.111
109.1
8.8
1400
0.566
166.1
1.995
65.9
0.175
66.6
0.112
118.8
7.7
1600
0.571
162.6
1.777
61.7
0.195
66.0
0.125
122.9
6.8
1800
0.573
158.8
1.616
58.2
0.214
66.0
0.130
123.1
6.0
2000
0.585
154.4
1.488
55.0
0.234
66.1
0.127
126.2
5.3
2200
0.604
151.0
1.380
52.4
0.252
66.2
0.130
135.1
4.8
2400
0.624
148.8
1.285
49.4
0.268
66.2
0.152
143.0
4.4
2600
0.633
147.1
1.200
46.6
0.282
65.5
0.180
144.7
3.9
2800
0.626
144.3
1.148
43.5
0.299
65.0
0.199
143.3
3.5
3000
0.629
140.8
1.100
41.0
0.319
64.7
0.208
143.7
3.2
Table 6
Noise data: VCE = 5 V; IC = 20 mA.
f
(MHz)
500
1000
March 1994
opt
Fmin
(dB)
(ratio)
(deg)
2.80
3.60
0.301
0.356
100.8
152.2
13
Rn
0.610
0.280
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
Table 7
BFT93W
Common emitter scattering parameters: VCE = 5 V; IC = 30 mA.
s11
s21
s12
s22
f
(MHz) MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
GUM
(dB)
62.3
28.063
151.4
0.016
71.2
0.781
27.1
33.7
0.453
113.1
19.479
126.1
0.030
58.8
0.543
51.8
28.3
0.502
144.8
11.682
107.7
0.043
56.8
0.327
70.7
23.1
300
0.521
158.0
8.162
98.8
0.054
58.9
0.232
81.5
19.8
400
0.532
165.8
6.248
92.9
0.065
61.4
0.185
89.9
17.5
500
0.537
170.8
5.069
88.6
0.076
63.4
0.161
96.5
15.7
600
0.542
174.9
4.269
84.9
0.088
65.0
0.148
100.5
14.2
700
0.543
178.2
3.692
81.7
0.099
65.8
0.139
102.3
13.0
800
0.545
178.7
3.258
78.8
0.111
66.4
0.131
103.2
11.9
900
0.548
176.0
2.917
76.1
0.122
67.0
0.123
103.6
10.9
1000
0.552
173.2
2.644
73.8
0.133
67.4
0.114
104.8
10.1
1200
0.565
168.6
2.233
69.2
0.154
68.0
0.101
112.5
8.7
1400
0.577
165.0
1.948
64.9
0.175
68.2
0.105
121.9
7.6
1600
0.584
161.7
1.734
60.8
0.195
67.5
0.119
125.4
6.7
1800
0.586
157.9
1.577
57.3
0.214
67.3
0.125
125.0
5.8
2000
0.598
153.6
1.451
54.2
0.234
67.3
0.124
128.3
5.2
2200
0.620
150.3
1.345
51.5
0.252
67.5
0.129
137.0
4.8
2400
0.639
148.1
1.251
48.7
0.269
67.5
0.152
144.6
4.3
2600
0.646
146.3
1.169
46.0
0.284
66.6
0.181
146.1
3.8
2800
0.642
143.4
1.118
43.0
0.300
66.2
0.200
144.7
3.4
3000
0.644
139.8
1.071
40.5
0.321
65.7
0.210
145.0
3.1
40
0.382
100
200
Table 8
Noise data: VCE = 5 V; IC = 30 mA.
f
(MHz)
500
1000
March 1994
opt
Fmin
(dB)
(ratio)
(deg)
3.40
4.20
0.308
0.380
104.2
164.0
14
Rn
0.830
0.310
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
Table 9
BFT93W
Common emitter scattering parameters: VCE = 10 V; IC = 5 mA.
s11
s21
s12
s22
f
(MHz) MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
GUM
(dB)
40
0.837
16.8
11.098
166.4
0.020
80.4
0.947
10.2
36.0
100
0.781
40.2
10.061
150.4
0.046
67.6
0.856
23.6
29.9
200
0.670
73.9
8.331
130.4
0.073
54.7
0.674
38.2
23.6
300
0.592
98.6
6.727
116.7
0.088
48.3
0.537
46.3
19.9
400
0.547
116.1
5.490
107.3
0.098
45.8
0.447
51.2
17.3
500
0.523
128.7
4.616
100.5
0.106
45.2
0.389
54.5
15.4
600
0.507
138.6
3.971
94.9
0.114
45.6
0.352
56.5
13.8
700
0.495
146.1
3.476
90.3
0.121
46.4
0.327
57.6
12.5
800
0.487
152.5
3.094
86.3
0.129
47.3
0.309
58.0
11.4
900
0.481
158.1
2.782
82.6
0.136
48.2
0.294
57.8
10.4
1000
0.478
163.1
2.532
79.5
0.143
49.3
0.279
57.8
9.5
1200
0.483
171.8
2.155
73.7
0.156
51.0
0.250
59.2
8.1
1400
0.493
178.2
1.895
68.4
0.171
52.4
0.234
63.8
7.0
1600
0.499
176.9
1.694
63.6
0.185
53.2
0.232
69.2
6.1
1800
0.501
172.0
1.541
59.6
0.198
54.4
0.233
71.8
5.3
2000
0.509
166.5
1.418
55.9
0.212
55.5
0.227
74.1
4.6
2200
0.529
161.8
1.317
52.6
0.224
56.5
0.215
79.5
4.0
2400
0.550
158.8
1.228
49.0
0.236
57.2
0.215
88.7
3.6
2600
0.564
156.7
1.148
45.9
0.246
57.5
0.232
96.4
3.1
2800
0.564
153.7
1.100
42.8
0.259
58.2
0.253
100.1
2.8
3000
0.569
150.0
1.051
40.2
0.274
58.9
0.262
102.7
2.4
Table 10 Noise data: VCE = 10 V; IC = 5 mA.
f
(MHz)
500
1000
March 1994
opt
Fmin
(dB)
(ratio)
2.00
2.50
0.340
0.380
15
(deg)
73.0
105.0
Rn
0.440
0.360
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
Table 11 Common emitter scattering parameters: VCE = 10 V; IC = 10 mA.
s11
s21
s12
s22
f
(MHz) MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
0.744
24.2
18.034
100
0.666
56.4
200
0.556
95.4
300
0.507
119.1
400
0.485
500
0.474
600
700
GUM
(dB)
162.0
0.019
77.2
0.902
15.2
35.9
15.339
142.3
0.040
63.6
0.757
33.0
30.0
11.171
121.0
0.059
53.5
0.533
49.6
24.0
8.353
109.0
0.071
50.8
0.398
57.9
20.5
134.4
6.576
101.2
0.081
51.0
0.319
63.2
18.0
144.5
5.412
95.6
0.090
52.2
0.272
66.9
16.1
0.469
152.4
4.597
91.1
0.099
53.7
0.243
69.2
14.6
0.465
158.4
3.997
87.2
0.108
54.9
0.224
70.3
13.3
3.537
83.9
12.2
800
0.461
163.5
0.118
56.1
0.209
70.3
900
0.459
168.1
3.170
80.8
0.128
57.0
0.196
69.7
11.2
1000
0.460
172.3
2.875
78.2
0.137
57.8
0.183
69.3
10.4
1200
0.469
179.3
2.435
73.1
0.155
59.1
0.157
71.0
8.9
1400
0.482
175.4
2.130
68.4
0.173
59.8
0.144
77.4
7.8
1600
0.488
171.5
1.898
64.1
0.191
59.7
0.147
83.7
6.8
1800
0.489
167.2
1.723
60.4
0.207
59.9
0.150
85.2
6.0
2000
0.501
162.2
1.584
57.0
0.224
60.3
0.144
87.1
5.3
2200
0.522
158.0
1.469
54.0
0.239
60.6
0.134
94.3
4.8
2400
0.543
155.4
1.367
50.7
0.253
60.7
0.140
106.3
4.3
2600
0.557
153.8
1.278
47.8
0.264
60.3
0.162
113.7
3.9
2800
0.556
151.0
1.222
44.7
0.278
60.4
0.183
115.3
3.5
3000
0.560
147.6
1.168
42.1
0.295
60.4
0.192
116.6
3.1
Table 12 Noise data: VCE = 10 V; IC = 10 mA.
f
(MHz)
500
1000
March 1994
opt
Fmin
(dB)
(ratio)
2.40
2.90
0.270
0.350
16
(deg)
83.0
115.0
Rn
0.400
0.350
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
Table 13 Common emitter scattering parameters: VCE = 10 V; IC = 20 mA.
s11
s21
s12
s22
f
(MHz) MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
25.207
156.9
0.018
74.2
0.840
20.3
35.8
73.8
19.459
133.9
0.035
61.0
0.644
41.3
29.8
113.4
12.634
113.7
0.050
54.9
0.416
58.0
24.0
134.1
9.050
103.5
0.061
55.1
0.299
66.3
20.6
0.456
146.7
6.997
96.9
0.072
56.9
0.236
72.0
18.2
0.453
154.7
5.702
92.1
0.082
58.5
0.200
76.3
16.3
600
0.453
161.0
4.818
88.2
0.093
60.0
0.179
79.0
14.8
700
0.451
165.7
4.171
84.8
0.104
61.0
0.165
79.9
13.5
3.683
81.8
12.4
40
0.655
100
0.568
200
0.487
300
0.463
400
500
33.6
GUM
(dB)
800
0.451
169.9
0.115
61.8
0.155
79.9
900
0.452
173.7
3.297
79.0
0.126
62.4
0.143
79.0
11.4
1000
0.454
177.3
2.986
76.6
0.137
62.9
0.132
78.5
10.6
1200
0.467
176.6
2.521
71.9
0.157
63.4
0.110
81.6
9.2
1400
0.482
172.4
2.200
67.6
0.176
63.4
0.103
90.5
8.0
1600
0.490
168.8
1.956
63.6
0.195
62.8
0.110
97.4
7.1
1800
0.493
164.8
1.774
60.1
0.212
62.7
0.114
98.0
6.2
2000
0.505
159.8
1.630
56.8
0.230
62.7
0.109
100.1
5.6
2200
0.528
155.9
1.509
54.1
0.245
62.8
0.103
109.7
5.0
2400
0.550
153.6
1.405
51.0
0.260
62.7
0.115
122.8
4.6
2600
0.563
151.9
1.312
48.1
0.273
62.2
0.141
128.2
4.1
2800
0.562
149.2
1.253
45.2
0.287
62.0
0.160
127.8
3.7
3000
0.565
145.8
1.199
42.6
0.305
61.7
0.169
128.3
3.4
Table 14 Noise data: VCE = 10 V; IC = 20 mA.
f
(MHz)
500
1000
March 1994
opt
Fmin
(dB)
(ratio)
3.00
3.60
0.240
0.320
17
(deg)
98.0
131.0
Rn
0.440
0.400
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
Table 15 Common emitter scattering parameters: VCE = 10 V; IC = 30 mA.
s11
s21
s12
s22
f
(MHz) MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
GUM
(dB)
39.1
28.045
153.9
0.017
73.1
0.797
22.6
35.4
0.529
82.4
20.389
129.6
0.032
60.3
0.583
44.1
29.4
0.464
120.8
12.630
110.4
0.047
56.4
0.364
59.3
23.7
300
0.449
139.7
8.920
101.0
0.058
57.3
0.259
66.3
20.3
400
0.446
151.0
6.853
94.8
0.069
59.4
0.204
71.2
17.9
500
0.446
158.1
5.569
90.3
0.081
60.9
0.174
75.0
16.0
600
0.448
163.5
4.694
86.5
0.092
62.2
0.158
77.2
14.5
700
0.449
167.8
4.060
83.3
0.103
63.0
0.147
77.7
13.2
3.579
80.4
12.1
40
0.617
100
200
800
0.450
171.7
0.115
63.6
0.139
77.1
900
0.452
175.1
3.204
77.7
0.126
63.8
0.131
75.9
11.2
1000
0.456
178.5
2.902
75.4
0.136
64.1
0.122
75.0
10.3
1200
0.472
175.9
2.448
70.8
0.157
64.3
0.103
77.7
8.9
1400
0.488
171.7
2.134
66.6
0.176
64.2
0.097
87.1
7.8
1600
0.498
168.1
1.898
62.5
0.194
63.6
0.106
94.6
6.9
1800
0.502
164.0
1.721
59.1
0.211
63.4
0.112
95.7
6.0
2000
0.516
159.3
1.580
56.0
0.229
63.5
0.108
98.0
5.4
2200
0.539
155.4
1.464
53.2
0.245
63.7
0.103
108.1
4.8
2400
0.562
152.9
1.362
50.2
0.260
63.6
0.116
121.5
4.4
2600
0.575
151.2
1.273
47.4
0.272
63.0
0.141
127.4
3.9
2800
0.573
148.4
1.217
44.5
0.287
62.9
0.162
127.3
3.5
3000
0.576
144.7
1.164
42.0
0.305
62.6
0.172
128.1
3.2
Table 16 Noise data: VCE = 10 V; IC = 30 mA.
f
(MHz)
500
1000
March 1994
opt
Fmin
(dB)
(ratio)
(deg)
3.60
4.20
0.250
0.310
101.0
143.0
18
Rn
0.550
0.480
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
March 1994
REFERENCES
IEC
JEDEC
JEITA
SC-70
19
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
Right to make changes  NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
DEFINITIONS
Product specification  The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
Suitability for use  NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
DISCLAIMERS
Limited warranty and liability  Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
Applications  Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
March 1994
20
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
Export control  This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Quick reference data  The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products  Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.
Terms and conditions of commercial sale  NXP
Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an
individual agreement is concluded only the terms and
conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license  Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
March 1994
21
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [email protected]
© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R77/01/pp22
Date of release: March 1994
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