Data Sheet

BFU668F
NPN wideband silicon RF transistor
Rev. 3 — 24 January 2012
Product data sheet
1. Product profile
1.1 General description
NPN silicon microwave transistor in a plastic, 4-pin dual-emitter SOT343F package
offering an innovative Ku-band DRO solution.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
1.2 Features and benefits
 DROs with good output power and low phase noise at very low current consumption: 5
dBm and 55 dBc/Hz/1 kHz at 12 mA
 Low-noise, high gain for low cost LNA solutions
 40 GHz fT silicon technology
1.3 Applications
 Ku-band DROs in Ku-band LNBs
 C-band, low current LNAs
BFU668F
NXP Semiconductors
NPN wideband silicon RF transistor
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min Typ
Max Unit
VCBO
collector-base voltage
open emitter
-
-
16
V
VCEO
collector-emitter voltage
open base
-
-
5.5
V
VEBO
emitter-base voltage
open collector
-
-
2.5
V
IC
collector current
-
15
40
mA
-
-
200
mW
Ptot
total power dissipation
Tsp  90 C
hFE
DC current gain
IC = 10 mA; VCE = 3.5 V;
Tj = 25 C
90
135
200
CCBS
collector-base capacitance
VCB = 2 V; f = 1 MHz
-
138
-
fF
fT
transition frequency
IC = 15 mA; VCE = 3.5 V;
f = 2 GHz; Tamb = 25 C
-
20
-
GHz
IP3o(max)
maximum output third-order
intercept point
IC = 15 mA; VCE = 3.5 V;
f = 10 GHz; Tamb = 25 C;
ZS = ZL = 50 ;
-
24
-
dBm
Gp(max)
maximum power gain
IC = 15 mA; VCE = 3.5 V;
f = 10.0 GHz;
Tamb = 25 C
-
10.5
-
dB
NF
noise figure
IC = 15 mA; VCE = 3.5 V;
f = 10.0 GHz; S = opt;
Tamb = 25 C
-
1.7
-
dB
PL(1dB)
output power at 1 dB gain
compression
IC = 15 mA; VCE = 3.5 V;
ZS = ZL = 50 ;
f = 10 GHz; Tamb = 25 C
-
12
-
dBm
[1]
[2]
[1]
Tsp is the temperature at the solder point of the emitter lead.
[2]
Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG.
2. Pinning information
Table 2.
Discrete pinning
Pin
Description
1
emitter
2
base
3
emitter
4
collector
Simplified outline
3
Graphic symbol
4
4
2
1, 3
2
BFU668F
Product data sheet
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1
mbb159
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NPN wideband silicon RF transistor
3. Ordering information
Table 3.
Ordering information
Type number
BFU668F
Package
Name
Description
Version
-
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
SOT343F
4. Marking
Table 4.
Marking
Type number
Marking
Description
BFU668F
ZA*
* = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
16
V
VCEO
collector-emitter voltage
open base
-
5.5
V
VEBO
emitter-base voltage
open collector
-
2.5
V
IC
collector current
-
40
mA
-
200
mW
Tsp  90 C
[1]
Ptot
total power dissipation
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
150
C
[1]
Tsp is the temperature at the solder point of the emitter lead.
6. Thermal characteristics
BFU668F
Product data sheet
Table 6.
Thermal characteristics
Symbol
Parameter
Rth(j-sp)
thermal resistance from junction to solder point
Conditions
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 24 January 2012
Typ
Unit
270
K/W
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BFU668F
NXP Semiconductors
NPN wideband silicon RF transistor
aaa-001278
250
Ptot
(mW)
200
150
100
50
0
0
40
80
120
160
Tsp (°C)
Fig 1.
BFU668F
Product data sheet
Power derating curve
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NPN wideband silicon RF transistor
7. Characteristics
Table 7.
Characteristics
Tj = 25 C unless otherwise specified
Symbol
Parameter
Conditions
Min Typ
Max Unit
V(BR)CBO collector-base breakdown voltage
IC = 2.5 A; IE = 0 mA
16
-
-
V
V(BR)CEO collector-emitter breakdown voltage
IC = 1 mA; IB = 0 mA
5.5
-
-
V
-
15
40
mA
nA
IC
collector current
ICBO
collector-base cut-off current
IE = 0 mA; VCB = 8 V
-
-
100
hFE
DC current gain
IC = 10 mA; VCE = 3.5 V
90
135
200
CCES
collector-emitter capacitance
VCB = 2 V; f = 1 MHz
-
297
-
fF
CEBS
emitter-base capacitance
VEB = 0.5 V; f = 1 MHz
-
664
-
fF
CCBS
collector-base capacitance
VCB = 2 V; f = 1 MHz
-
138
-
fF
fT
transition frequency
IC = 15 mA; VCE = 3.5 V; f = 2 GHz;
Tamb = 25 C
-
20
-
GHz
Gp(max)
maximum power gain
IC = 15 mA; VCE = 3.5 V; Tamb = 25 C
f = 5.8 GHz
-
14.5
-
dB
f = 10.0 GHz
-
10.5
-
dB
f = 5.8 GHz
-
9.5
-
dB
f = 10.0 GHz
-
5.0
-
dB
f = 5.8 GHz
-
1.3
-
dB
f = 10.0 GHz
-
1.7
-
dB
f = 5.8 GHz
-
13
-
dB
f = 10.0 GHz
-
9.5
-
dB
f = 5.8 GHz
-
13
-
dBm
f = 10.0 GHz
-
12
-
dBm
f = 5.8 GHz
-
24
-
dBm
f = 10.0 GHz
-
24
-
dBm
s212
NF
IC = 15 mA; VCE = 3.5 V; Tamb = 25 C
insertion power gain
IC = 15 mA; VCE = 3.5 V; S = opt;
Tamb = 25 C
noise figure
Gass
PL(1dB)
IC = 15 mA; VCE = 3.5 V; S = opt;
Tamb = 25 C
associated gain
output power at 1 dB gain compression
IP3o(max) maximum output third-order intercept
point
[1]
[1]
IC = 15 mA; VCE = 3.5 V;
ZS = ZL = 50 ; Tamb = 25 C
IC = 15 mA; VCE = 3.5 V;
ZS = ZL = 50 ; Tamb = 25 C
Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG.
BFU668F
Product data sheet
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Rev. 3 — 24 January 2012
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NPN wideband silicon RF transistor
8. Application information
8.1 BFU668F Ku-band Dielectric Resonator Oscillator (DRO)
Figure 2 shows a typical DRO circuit using BFU668F as active device. The schematic
highlights the bias elements. Evaluation tests, done by replacing the existing transistor
with BFU668F, on three different DRO LNBs / configurations, have proven:
• BFU668F achieves similar Phase Noise and RF power as the replaced transistor
• BFU668F achieves same RF performances at approximately half of the bias current
RC
CC
VCC
CCC
IC
LC
BFU668F
DR
VCE
RB
LB
CB
aaa-001279
Fig 2.
BFU668F
Product data sheet
Generic schematic / bias
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NPN wideband silicon RF transistor
8.2 Graphs
aaa-001280
40
IC
(mA)
hFE
(6)
160
(5)
30
(4)
20
aaa-001281
200
120
(3)
80
(2)
10
40
(1)
0
0
0
1
2
3
4
0
5
10
20
30
40
IC (mA)
VCE (V)
Tamb = 25 C.
VCE = 2 V; Tamb = 25 C.
(1) IB = 50 A
(2) IB = 100 A
(3) IB = 150 A
(4) IB = 200 A
(5) IB = 250 A
(6) IB = 300 A
Fig 3.
Collector current as a function of
collector-emitter voltage; typical values
BFU668F
Product data sheet
Fig 4.
DC current gain as a function of collector
current; typical values
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BFU668F
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NPN wideband silicon RF transistor
aaa-001282
200
aaa-001283
25
fT
CCBS
(fF)
(GHz)
160
20
120
15
80
10
40
5
0
0
0
4
8
0
12
10
20
30
VCB (V)
f = 1 MHz, Tamb = 25 C.
Fig 5.
40
IC (mA)
VCE = 3.5 V; f = 2 GHz; Tamb = 25 C.
Collector-base capacitance as a function of
collector-base voltage; typical values
Fig 6.
Transition frequency as a function of collector
current; typical values
aaa-001284
16
G
(dB)
(1)
12
(2)
8
4
0
5
12
19
26
33
40
IC (mA)
VCE = 3.5 V; Tamb = 25 C.
(1) f = 5.8 GHz
(2) f = 10.0 GHz
Fig 7.
Gain as a function of collector current; typical value
BFU668F
Product data sheet
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BFU668F
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NPN wideband silicon RF transistor
aaa-001285
50
G
(dB)
aaa-001286
2.0
NFmin
(dB)
40
1.6
1.2
30
MSG
0.8
20
Gp(max)
10
0.4
|S21|2
0
0.0
0
2
4
6
8
0
10
2
f (GHz)
Product data sheet
8
10
VCE = 3.5 V; IC = 15 mA; Tamb = 25 C.
Gain as a function of frequency; typical values
BFU668F
6
f (GHz)
VCE = 3.5 V; IC = 15 mA; Tamb = 25 C.
Fig 8.
4
Fig 9.
Minimum noise figure as a function of
frequency; typical values
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BFU668F
NXP Semiconductors
NPN wideband silicon RF transistor
9. Package outline
Plastic surface-mounted flat pack package; reverse pinning; 4 leads
D
SOT343F
E
A
y
X
HE
e
3
4
A
c
2
w
M
A
Lp
1
bp
b1
w
A
M
detail X
e1
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max
bp
b1
c
D
E
e
e1
HE
Lp
w
y
mm
0.75
0.65
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.48
0.38
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
05-07-12
06-03-16
SOT343F
Fig 10. Package outline SOT343F
BFU668F
Product data sheet
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10. Abbreviations
Table 8.
Abbreviations
Acronym
Description
DC
Direct Current
DRO
Dielectric Resonator Oscillator
Ku
Kurtz under
LNA
Low Noise Amplifier
LNB
Low Noise Block
NPN
Negative-Positive-Negative
RF
Radio Frequency
11. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BFU668F v.3
20120124
Product data sheet
-
BFU668F v.2
Modifications:
•
•
Table 1 on page 2: maximum value for hFE has been changed.
Table 7 on page 5: maximum value for hFE has been changed.
BFU668F v.2
20120120
Product data sheet
-
BFU668F v.1
BFU668F v.1
20111108
Product data sheet
-
-
BFU668F
Product data sheet
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12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BFU668F
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 24 January 2012
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Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BFU668F
Product data sheet
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NPN wideband silicon RF transistor
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
8.2
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 3
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Application information. . . . . . . . . . . . . . . . . . . 6
BFU668F Ku-band Dielectric Resonator Oscillator
(DRO) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 24 January 2012
Document identifier: BFU668F