Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BSR12
PNP switching transistor
Product specification
1999 Jul 23
Philips Semiconductors
Product specification
PNP switching transistor
BSR12
FEATURES
• Low current (max. 100 mA)
handbook, halfpage
3
• Low voltage (max. 15 V).
3
1
APPLICATIONS
• High-speed, saturated switching applications for
industrial service in thick and thin-film circuits.
2
1
2
Top view
MAM256
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
Fig.1 Simplified outline (SOT23) and symbol.
PINNING
PIN
DESCRIPTION
MARKING
1
base
2
emitter
3
collector
TYPE NUMBER
MARKING CODE
BSR12
B5p
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−15
V
VCEO
collector-emitter voltage
open base
−
−15
V
ICM
peak collector current
−
−200
mA
Ptot
total power dissipation
−
250
mW
Tj
junction temperature
−
150
°C
hFE
DC current gain
IC = −10 mA; VCE = −1 V
30
−
IC = −50 mA; VCE = −1 V
30
120
1.5
−
GHz
30
ns
Tamb ≤ 25 °C
fT
transition frequency
f = 500 MHz; IC = −50 mA; VCE = −10 V
toff
turn-off time
ICon = −30 mA; IBon = −3 mA; IBoff = 3mA −
1999 Jul 23
2
Philips Semiconductors
Product specification
PNP switching transistor
BSR12
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−15
V
VCEO
collector-emitter voltage
open base
−
−15
V
VEBO
emitter-base voltage
open collector
−
−3
V
IC
collector current (DC)
−
−100
mA
ICM
peak collector current
−
−200
mA
Ptot
total power dissipation
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb ≤ 25 °C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
note 1
Note
1. Transistor mounted on a ceramic substrate 8 × 10 × 0.7 mm.
1999 Jul 23
3
VALUE
UNIT
500
K/W
Philips Semiconductors
Product specification
PNP switching transistor
BSR12
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
CONDITIONS
IE = 0; VCB = −10 V
MIN.
TYP.
MAX.
UNIT
−
−
−50
nA
IE = 0; VCB = −10 V; Tamb = 125 °C −
−
−5
µA
ICES
collector cut-off current
VBE = 0; VCE = −10 V
−
−
−50
nA
V(BR)CBO
breakdown voltage
IE = 0; IC = −10 µA
−15
−
−
V
V(BR)CES
breakdown voltage
VBE = 0; IC = −10 µA
−15
−
−
V
V(BR)EBO
breakdown voltage
IC = 0; IE = −100 µA
−3
−
−
V
VCEOsust
collector-emitter sustaining IB = 0; IC = −10 mA
voltage
−15
−
−
V
VCEsat
collector-emitter saturation
voltage
IC = −10 mA; IB = −1 mA; note 1
−
−
−130
mV
IC = −50 mA; IB = −5 mA; note 1
−
−180
−270
mV
IC = −100 mA; IB = −10 mA; note 1 −
−
−450
mV
base-emitter saturation
voltage
IC = −10 mA; IB = −1 mA; note 1
−725
−
−920
mV
IC = −50 mA; IB = −5 mA; note 1
−800
−
−1150
mV
IC = −100 mA; IB = −10 mA; note 1 −900
−
−1500
mV
VBEsat
hFE
DC current gain
IC = −1 mA; VCE = −1 V; note 1
30
−
−
IC = −10 mA; VCE = −1 V; note 1
30
−
−
IC = −50 mA; VCE = −1 V; note 1
30
−
120
IC = −50 mA; VCE = −1 V;
Tamb = 55 °C; note 1
30
−
−
IC = −100 mA; VCE = −1 V; note 1
20
−
−
1.5
−
−
fT
transition frequency
IC = −50 mA; VCE = −10 V;
f = 500 MHz
Cc
collector capacitance
IE = Ie = 0; VCB = −5 V
−
−
4.5
pF
Ce
emitter capacitance
IC = Ic = 0; VEB = −0.5 V
−
−
6
pF
GHz
Switching time (see Fig.2)
ton
turn-on time
Vi = −6.85 V; VBB = 0 V;
ICon = −30 mA; IBon = −3.0 mA
−
−
20
ns
toff
turn-off time
Vi = 11.7 V; VBB = −9.85 V;
ICon = −30 mA; IBon = −3 mA;
IBoff = 3 mA
−
−
30
ns
Note
1. Pulse test: tp = 300 µs; δ = 0.01.
1999 Jul 23
4
Philips Semiconductors
Product specification
PNP switching transistor
BSR12
VCC = −3 V
VBB
R1
handbook, halfpage
R2
C
Vo
R3
Vi
DUT
50 Ω
MGS460
R1 = 94 Ω; R2 = 1 kΩ; R3 = 2 kΩ; C = 0.1 µF.
Pulse generator: Pulse duration tp = 400 ns. Rise time tr < 1 ns. Output impedance ZO = 50 Ω.
Sampling scope: Rise time tr < 1 ns. Input impedance Zi = 100 kΩ.
Fig.2 Test circuit for switching times.
MGS461
70
handbook, full pagewidth
hFE
60
typ
50
40
30
20
−10−1
−1
−10
VCE = − 1 V; Tamb = 25°C.
Fig.3 DC current gain; typical values.
1999 Jul 23
5
−102
IC (mA)
−103
Philips Semiconductors
Product specification
PNP switching transistor
BSR12
MGS462
−500
handbook, full pagewidth
VCEsat
(mV)
−400
−300
−200
−100
typ
0
−10−1
−1
−10
−102
IC (mA)
−103
IC/IB = 10.
Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values.
MGS463
−1000
handbook, full pagewidth
VBEsat
(mV)
−800
typ
−600
−400
−200
0
−10−1
−1
−10
−102
IC (mA)
IC/IB = 10.
Fig.5 Base-emitter saturation voltage as a function of collector current; typical values.
1999 Jul 23
6
−103
Philips Semiconductors
Product specification
PNP switching transistor
BSR12
MGS464
−500
handbook, halfpage
VCEsat
(mV)
−400
(1)
−300
−200
(2)
−100
0
0
40
80
120
160
200
Tj (°C)
(1) IC = 100 mA; IB = 10 mA
(2) IC = 50 mA and IB = 5 mA.
Fig.6 Collector-emitter saturation voltage as a function of junction temperature; typical values.
1999 Jul 23
7
Philips Semiconductors
Product specification
PNP switching transistor
BSR12
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
1999 Jul 23
EUROPEAN
PROJECTION
8
Philips Semiconductors
Product specification
PNP switching transistor
BSR12
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Jul 23
9
Philips Semiconductors
Product specification
PNP switching transistor
BSR12
NOTES
1999 Jul 23
10
Philips Semiconductors
Product specification
PNP switching transistor
BSR12
NOTES
1999 Jul 23
11
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© Philips Electronics N.V. 1999
SCA 67
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125006/02/pp12
Date of release: 1999
Jul 23
Document order number:
9397 750 06129
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