Data Sheet

BSS83
MOSFET N-channel enhancement switching transistor
Rev. 03 — 21 November 2007
Product data sheet
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NXP Semiconductors
NXP Semiconductors
Product specification
MOSFET N-channel enhancement switching transistor
DESCRIPTION
Marking code:
Symmetrical insulated-gate silicon
MOS field-effect transistor of the
N-channel enhancement mode type.
The transistor is sealed in a SOT143
envelope and features a low ON
resistance and low capacitances. The
transistor is protected against
excessive input voltages by
integrated back-to-back diodes
between gate and substrate.
BSS83 = % M9
handbook, halfpage
4
3
d
APPLICATIONS
b
g
• analog and/or digital switch
• switch driver
BSS83
1
s
2
Top view
MAM389
PINNING
1
= substrate (b)
2
= source
3
= drain
4
= gate
Fig.1 Simplified outline and symbol.
Note
1. Drain and source are
interchangeable.
QUICK REFERENCE DATA
Drain-source voltage
VDS
max.
10 V
Source-drain voltage
VSD
max.
10 V
Drain-substrate voltage
VDB
max.
15 V
Source-substrate voltage
VSB
max.
15 V
Drain current (DC)
ID
max.
50 mA
Total power dissipation up to Tamb = 25 °C
Ptot
max.
230 mW
Gate-source threshold voltage
VDS = VGS; VSB = 0;
ID = 1 µA
VGS(th)
>
0.1 V
<
2.0 V
RDSon
<
45 Ω
Crss
typ.
0.6 pF
Drain-source ON-resistance
VGS = 10 V; VSB = 0; ID = 0.1 mA
Feed-back capacitance
VGS = VBS = −15 V;
VDS = 10 V; f = 1 MHz
Rev. 03 - 21 November 2007
2 of 9
NXP Semiconductors
Product specification
MOSFET N-channel enhancement switching transistor
BSS83
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
VDS
max.
10 V
Source-drain voltage
VSD
max.
10 V
Drain-substrate voltage
VDB
max.
15 V
Source-substrate voltage
VSB
max.
15 V
ID
max.
50 mA
Ptot
max.
230 mW
Drain current (DC)
Total power dissipation up to Tamb = 25
°C(1)
−65 to + 150 °C
Storage temperature range
Tstg
Junction temperature
Tj
max.
Rth j-a
=
125 °C
THERMAL RESISTANCE
From junction to ambient in free air(1)
Rev. 03 - 21 November 2007
430 K/W
3 of 9
NXP Semiconductors
Product specification
MOSFET N-channel enhancement switching transistor
BSS83
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified
Drain-source breakdown voltage
VGS = VBS = −5 V; ID = 10 nA
V(BR)DSX
>
10 V
V(BR)SDX
>
10 V
V(BR)DBO
>
15 V
V(BR)SBO
>
15 V
IDSoff
<
10 nA
ISDoff
<
10 nA
>
10 mS
typ.
15 mS
>
0,1 V
<
2,0 V
Source-drain breakdown voltage
VGD = VBD = −5 V; ID = 10 nA
Drain-substrate breakdown voltage
VGB = 0; ID = 10 nA; open source
Source-substrate breakdown voltage
VGB = 0; ID = 10 nA; open drain
Drain-source leakage current
VGS = VBS = −2 V; VDS = 6,6 V
Source-drain leakage current
VGD = VBD = −2 V; VSD = 6,6 V
Forward transconductance at f = 1 kHz
VDS = 10 V; VSB = 0; ID = 20 mA
gfs
Gate-source threshold voltage
VDS = VGS; VSB = 0; ID = 1 µA
VGS(th)
Drain-source ON-resistance
ID = 0,1 mA;
VGS = 5 V; VSB = 0
RDSon
<
70 Ω
VGS = 10 V; VSB = 0
RDSon
<
45 Ω
VGS = 3,2 V; VSB = 6,8 V (see Fig.4)
RDSon
typ.
80 Ω
<
120 Ω
Gate-substrate zener voltages
VDB = VSB = 0; −IG = 10 µA
VZ(1)
>
12,5 V
VDB = VSB = 0; +IG = 10 µA
VZ(2)
>
12,5 V
Feed-back capacitance
Crss
typ.
0,6 pF
Input capacitance
Ciss
typ.
1,5 pF
Output capacitance
Coss
typ.
1,0 pF
ton
typ.
1,0 ns
toff
typ.
5,0 ns
Capacitances at f = 1 MHz
VGS = VBS = −15 V; VDS = 10 V
Switching times (see Fig.2)
VDD = 10 V; Vi = 5 V
Note
1. Device mounted on a ceramic substrate of 8 mm × 10 mm × 0,7 mm.
Rev. 03 - 21 November 2007
4 of 9
NXP Semiconductors
Product specification
MOSFET N-channel enhancement switching transistor
BSS83
Pulse generator:
Ri
=
50 Ω
tr
<
0,5 ns
tf
<
1,0 ns
tp
=
20 ns
δ
<
0,01
VDD
90%
90%
handbook, full pagewidth
0.1 µF
50 Ω
INPUT
Vo
10%
630 Ω
10%
tr
tf
ton
T.U.T
Vi
toff
90%
90%
50 Ω
OUTPUT
MBK297
10%
10%
MBK296
Fig.2 Switching times test circuit and input and output waveforms.
MDA250
60
VGS = 4.5 V
ID
(mA)
MDA251
1.2
handbook, halfpage
handbook, halfpage
ID
(mA)
4V
40
VGS = 10 V
5V
4V
3.2 V
3V
0.8
3.5 V
3V
2.5 V
20
0.4
2V
0
2V
0
0
4
8
VDS (V)
Tj = 25 °C.
12
0
40
80
VDSon (mV)
120
Tj = 25 °C.
Fig.3 VSB = 0; typical values.
Fig.4 VSB = 6,8 V; typical values.
Rev. 03 - 21 November 2007
5 of 9
NXP Semiconductors
Product specification
MOSFET N-channel enhancement switching transistor
MDA252
50
BSS83
MDA253
12
handbook, halfpage
handbook, halfpage
ID
(mA)
40
VSB = 0 V 4 V 12 V
ID
(mA)
8V
8
30
20
4
10
0
0
0
1
2
3
4
VGS (V)
Tj = 25 °C.
0
1
2
3
VGSth (V)
4
Tj = 25 °C.
Fig.5 VDS = 10 V; VBS = 0; typical values.
Fig.6 VDS = VGS = VGS(th).
MDA254
1.2
handbook, halfpage
VGS =
10 V 5 V 4 V
ID
3V
2V
(mA)
0.8
0.4
0
0
20
40
60
80
100
VDSon (mV)
Tj = 25 °C.
Fig.7 VSB = 0; typical values.
Rev. 03 - 21 November 2007
6 of 9
NXP Semiconductors
Product specification
MOSFET N-channel enhancement switching transistor
BSS83
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
HE
v M A
e
bp
w M B
4
3
Q
A
A1
c
1
2
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
SOT143B
Rev. 03 - 21 November 2007
7 of 9
BSS83
NXP Semiconductors
MOSFET N-channel enhancement switching transistor
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
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information.
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Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
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subject to the general terms and conditions of commercial sale, as published
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Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
Rev. 03 - 21 November 2007
8 of 9
BSS83
NXP Semiconductors
MOSFET N-channel enhancement switching transistor
Revision history
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BSS83_N_3
20071121
Product data sheet
-
BSS83_CNV_2
Modifications:
BSS83_CNV_2
•
Page 2; column 2; Marking code; row 1 changed
19910401
Product specification
-
-
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 21 November 2007
Document identifier: BSS83_N_3
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