Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
PBR941
UHF wideband transistor
Product specification
Supersedes data of 1998 May 08
File under Discrete Semiconductors, SC14
1998 Aug 10
Philips Semiconductors
Product specification
UHF wideband transistor
PBR941
FEATURES
PINNING - SOT23
• Small size
PIN
• Low noise
1
base
• Low distortion
2
emitter
• High gain
3
collector
DESCRIPTION
• Gold metallization ensures excellent reliability.
handbook, halfpage
APPLICATIONS
3
3
• Communication and instrumentation systems.
1
DESCRIPTION
Silicon NPN transistor in a surface mount 3-pin SOT23
package. The transistor is primarily intended for wideband
applications in the GHz-range in the RF front end of analog
and digital cellular telephones, cordless phones, radar
detectors, pagers and satellite TV-tuners.
1
2
2
Top view
MAM255
Marking code: V0.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz
0.3
−
pF
fT
transition frequency
IC = 15 mA; VCE = 6 V; fm = 1 GHz
8
−
GHz
GUM
maximum unilateral power gain
IC = 15 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 °C
15
−
dB
F
noise figure
ΓS = Γopt; IC = 5 mA; VCE = 6 V;
f = 1 GHz
1.4
−
dB
Ptot
total power dissipation
Ts = 60 °C; note 1
−
360
mW
Rth j-s
thermal resistance from junction
to soldering point
Ptot = 360 mW
−
320
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
1998 Aug 10
2
Philips Semiconductors
Product specification
UHF wideband transistor
PBR941
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
10
V
VEBO
emitter-base voltage
open collector
−
1.5
V
IC
collector current (DC)
−
50
mA
IC(AV)
average collector current
−
50
mA
Ptot
total power dissipation
−
360
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
175
°C
Ts = 60 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction
to soldering point; note 1
CONDITIONS
Ptot = 360 mW; Ts = 60 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
1998 Aug 10
3
VALUE
UNIT
320
K/W
Philips Semiconductors
Product specification
UHF wideband transistor
PBR941
CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC characteristics
V(BR)CBO
collector-base breakdown voltage
IC = 100 µA; IE = 0
20
−
−
V
V(BR)CEO
collector-emitter breakdown voltage IC = 100 µA; IB = 0
10
−
−
V
V(BR)EBO
emitter-base breakdown voltage
IE = 10 µA; IC = 0
1.5
−
−
V
ICBO
collector-base leakage current
VCB = 10 V; IE = 0
−
−
100
nA
IEBO
emitter-base leakage current
VEB = 1 V; IC = 0
−
−
100
nA
hFE
DC current gain
IC = 5 mA; VCE = 6 V
50
100
200
IC = 15 mA; VCE = 6 V
−
100
−
IC = 0; VCB = 6 V; f = 1 MHz
−
0.3
−
AC characteristics
Cre
feedback capacitance
fT
transition frequency
IC = 15 mA; VCE = 6 V; f = 1 GHz
−
8
−
GHz
GUM
maximum unilateral power gain;
note 1
IC = 15 mA; VCE = 6 V;
Tamb = 25 °C; f = 1 GHz
−
15
−
dB
IC = 15 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
−
9.5
−
dB
ΓS = Γopt; IC = 5 mA; VCE = 6 V;
f = 1 GHz
−
1.4
−
dB
ΓS = Γopt; IC = 5 mA; VCE = 6 V;
f = 2 GHz
−
2
−
dB
F
noise figure
Note
pF
S 21 2
1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log -------------------------------------------------------------dB
( 1 – S 11 2 ) ( 1 – S 22 2 )
1998 Aug 10
4
Philips Semiconductors
Product specification
UHF wideband transistor
PBR941
MDA871
400
MDA872
120
handbook, halfpage
handbook, halfpage
Ptot
(mW)
hFE
300
80
200
40
100
0
0
0
50
100
150
Ts (°C)
200
10
0
20
30
50
40
IC (mA)
VCE = 6 V.
Fig.2
Power derating as a function of soldering
point temperature.
Fig.3
MDA873
0.5
Cre
DC current gain as a function of collector
current; typical values.
MDA874
10
handbook, halfpage
handbook, halfpage
fT
(GHz)
(pF)
0.4
8
0.3
6
0.2
4
0.1
2
0
0
0
4
8
VCB (V)
12
0
10
20
IC = 0; f = 1 MHz.
VCE = 6 V; f = 1 GHz; Tamb = 25 °C.
Fig.4
Fig.5
Feedback capacitance as a function of
collector-base voltage; typical values.
1998 Aug 10
5
30
IC (mA)
40
Transition frequency as a function of
collector current; typical values.
Philips Semiconductors
Product specification
UHF wideband transistor
PBR941
MDA875
20
gain
MDA876
50
gain
handbook, halfpage
handbook, halfpage
Gmax
(dB) MSG
16
(dB)
40
GUM
GUM
MSG
12
30
8
20
4
10
Gmax
0
10
0
0
10
20
30
IC (mA)
MSG
40
102
f = 1 GHz; VCE = 6 V.
IC = 5 mA; VCE = 6 V.
Fig.6
Fig.7
Gain as a function of collector current;
typical values.
MDA877
50
gain
103
f (MHz)
104
Gain as a function of frequency; typical
values.
MDA878
50
gain
handbook, halfpage
handbook, halfpage
(dB)
(dB)
40
40
MSG
GUM
MSG
GUM
30
30
20
20
Gmax
Gmax
10
10
MSG
0
10
102
103
f (MHz)
MSG
0
10
104
102
IC = 15 mA; VCE = 6 V.
IC = 30 mA; VCE = 6 V.
Fig.8
Fig.9
Gain as a function of frequency; typical
values.
1998 Aug 10
6
103
f (MHz)
104
Gain as a function of frequency; typical
values.
Philips Semiconductors
Product specification
UHF wideband transistor
PBR941
MDA879
4
MDA880
4
handbook, halfpage
handbook, halfpage
F
(dB)
F
(dB)
3
3
(1)
(2)
(1)
(3)
2
2
(2)
1
1
(4)
0
10−1
VCE = 6 V.
(1) f = 2000 MHz.
(2) f = 1000 MHz.
(3)
1
10
IC (mA)
0
102
102
(3) f = 500 MHz.
(4) f = 900 MHz.
VCE = 6 V.
(1) IC = 30 mA.
Fig.10 Minimum noise figure as a function of
collector current, typical values.
1998 Aug 10
103
f (MHz)
104
(2) IC = 15 mA.
(3) IC = 5 mA.
Fig.11 Minimum noise figure as a function of
frequency, typical values.
7
Philips Semiconductors
Product specification
UHF wideband transistor
PBR941
APPLICATION INFORMATION
SPICE parameters for the PBR941 die
SEQUENCE No.
PARAMETER
VALUE
UNIT
SEQUENCE No.
PARAMETER
39(2)
VALUE
UNIT
Cbpb
40(2)
Cbpe
84.00
fF
AF
1.000
−
KF
4 x 10−16 −
83.00
fF
1
IS
0.466
fA
41
2
BF
150.4
−
42
3
NF
1.000
−
Notes
4
VAF
53.06
V
5
IKF
180.0
mA
1. These parameters have not been extracted, the
default values are shown.
6
ISE
57.30
fA
7
NE
2.000
−
8
BR
27.68
−
9
NR
1.000
−
10
VAR
1.976
V
11
IKR
9.943
mA
12
ISC
1.420
aA
13
NC
1.000
−
14
RB
12.14
Ω
15
IRB
0.000
µA
16
RBM
4.957
Ω
17
RE
0.597
Ω
18
RC
1.988
Ω
19(1)
XTB
0.000
−
20(1)
EG
1.110
eV
21(1)
XTI
3.000
−
22
CJE
0.568
pF
23
VJE
600.0
mV
24
MJE
0.412
−
25
TF
2.037
ps
26
XTF
30.90
−
27
VTF
3.148
V
28
ITF
131.8
mA
29
PTF
0.000
deg
30
CJC
205.8
fF
31
VJC
296.2
mV
32
MJC
0.118
−
33
XCJC
0.104
−
34
TR
0.000
ps
35(1)
CJS
0.000
F
36(1)
VJS
700.0
mV
37(1)
MJS
0.000
−
38
FC
0.943
−
1998 Aug 10
2. Cbpb, Cbpe; base-bondpad and emitter-bondpad
capacitance to collector.
C cb
handbook, halfpage
L1
LB
B
L2
B'
C'
E'
C be
C
Cce
LE
MBC964
L3
E
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc);
fc = scaling frequency = 1 GHz.
Fig.12 Package equivalent circuit SOT23.
List of components (see Fig.12)
DESIGNATION
8
VALUE
UNIT
Cbe
7
fF
Ccb
80
fF
Cce
80
fF
L1
0.35
nH
L2
0.17
nH
L3
0.35
nH
LB
0.40
nH
LE
0.83
nH
Philips Semiconductors
Product specification
UHF wideband transistor
PBR941
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0
180°
0.4
5
0.2
0.5
2 GHz
0.2
3 GHz
1
2
5
0°
0
1 GHz
40 MHz
500 MHz
0.2
200 MHz
0.5
−135°
5
100 MHz
2
−45°
1
MDA881
1.0
−90°
VCE = 6 V; IC = 15 mA; Zo = 50 Ω.
Fig.13 Common emitter input reflection coefficient (S11); typical values.
90°
handbook, full pagewidth
135°
45°
100 MHz
50
40 MHz
40
30
20
200 MHz
500 MHz
1 GHz
2 GHz
3 GHz
10
180°
−135°
0°
−45°
−90°
MDA882
VCE = 6 V; IC = 15 mA.
Fig.14 Common emitter forward transmission coefficient (S21); typical values.
1998 Aug 10
9
Philips Semiconductors
Product specification
UHF wideband transistor
PBR941
90°
handbook, full pagewidth
135°
45°
3 GHz
2 GHz
0.5
0.4
0.3
0.2
180°
1 GHz
500 MHz
200 MHz
0.1
0°
40 MHz
−135°
−45°
−90°
MDA883
VCE = 6 V; IC = 15 mA.
Fig.15 Common emitter reverse transmission coefficient (S12); typical values.
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0
0.2
0.5
1
5
0°
0
40 MHz
1 GHz
2 GHz 500 MHz
3 GHz
200 MHz 100 MHz
5
0.2
−135°
2
0.5
2
−45°
1
MDA884
1.0
−90°
VCE = 6 V; IC = 15 mA; Zo = 50 Ω.
Fig.16 Common emitter output reflection coefficient (S22); typical values.
1998 Aug 10
10
Philips Semiconductors
Product specification
UHF wideband transistor
PBR941
handbook, full pagewidth
90°
unstable
region source
1
135°
2
0.5
unstable
region load
1.0
45°
0.8
0.6
0.2
0.4
5
ΓOPT
G = 16 dB
0.2
0.5
180°
1
0.2
2
5
0°
NF = 1.5 dB
G = 15 dB
NF = 1.7 dB
NF = 1.9 dB
G = 14 dB
0.2
0.5
−135°
0
5
2
−45°
1
MDA885
1.0
−90°
f = 1 GHz; VCE = 6 V; IC = 5 mA; Zo = 50 Ω.
Fig.17 Common emitter available gain circles; typical values.
handbook, full pagewidth
90°
unstable
region source
unstable
region load
1.0
1
135°
0.8
45°
2
0.5
Gmax = 10.26 dB
0.6
0.2
180°
0
0.4
5
0.2
ΓOPT
1
0.5
0.2
2
5
0°
0
NF = 2.1 dB
NF = 2.3 dB
NF = 2.5 dB
G = 10 dB
0.2
5
G = 9 dB
G = 8 dB
−135°
0.5
2
−45°
1
MDA886
−90°
f = 2 GHz; VCE = 6 V; IC = 5 mA; Zo = 50 Ω.
Fig.18 Common emitter available gain circles; typical values.
1998 Aug 10
11
1.0
Philips Semiconductors
Product specification
UHF wideband transistor
PBR941
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
1998 Aug 10
EUROPEAN
PROJECTION
12
Philips Semiconductors
Product specification
UHF wideband transistor
PBR941
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Short-form specification
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Aug 10
13
Philips Semiconductors
Product specification
UHF wideband transistor
PBR941
NOTES
1998 Aug 10
14
Philips Semiconductors
Product specification
UHF wideband transistor
PBR941
NOTES
1998 Aug 10
15
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© Philips Electronics N.V. 1998
SCA60
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125104/1200/05/pp16
Date of release: 1998 Aug 10
Document order number:
9397 750 04136
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