Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PBR941B
UHF wideband transistor
Preliminary specification
2001 Jan 18
Philips Semiconductors
Preliminary specification
UHF wideband transistor
PBR941B
PINNING SOT23
FEATURES
• Small size
PIN
• Low noise
1
base
• Low distortion
2
emitter
• High gain
3
collector
DESCRIPTION
• Gold metallization ensures excellent reliability.
APPLICATIONS
3
handbook, halfpage
• Communication and instrumentation systems.
DESCRIPTION
1
Silicon NPN transistor in a surface mount 3-pin SOT23
package. The transistor is primarily intended for wideband
applications in the GHz range in the RF front end of analog
and digital cellular telephones, cordless phones, radar
detectors, pagers and satellite TV-tuners.
2
Top view
MSB003
Marking code: LBp
Fig.1 Simplified outline (SOT23).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz
MIN.
−
TYP.
0.3
MAX.
−
UNIT
pF
fT
transition frequency
IC = 15 mA; VCE = 6 V; fm = 1 GHz
7
9
−
GHz
GUM
maximum unilateral power gain
IC = 15 mA; VCE = 6 V;
Tamb = 25 °C; f = 1 GHz
−
16
−
dB
NF
noise figure
ΓS = Γopt; IC = 5 mA; VCE = 6 V;
f = 1 GHz
−
1.5
2.5
dB
Ptot
total power dissipation
Ts = 60 °C; note 1
Rth j-s
thermal resistance from junction
to soldering point
Note
1. Ts is the temperature at the soldering point of the collector pin.
2001 Jan 18
2
−
−
360
mW
−
−
320
K/W
Philips Semiconductors
Preliminary specification
UHF wideband transistor
PBR941B
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
10
V
VEBO
emitter-base voltage
open collector
−
1.5
V
IC
collector current (DC)
−
50
mA
IC(AV)
average collector current
−
50
mA
Ptot
total power dissipation
−
360
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Ts = 60 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
2001 Jan 18
PARAMETER
thermal resistance from junction to soldering point
3
VALUE
UNIT
320
K/W
Philips Semiconductors
Preliminary specification
UHF wideband transistor
PBR941B
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC characteristics
V(BR)CBO
collector-base breakdown voltage
IC = 100 µA; IE = 0
20
−
−
V
V(BR)CEO
collector-emitter breakdown
voltage
IC = 100 µA; IB = 0
10
−
−
V
V(BR)EBO
emitter-base breakdown voltage
IE = 10 µA; IC = 0
1.5
−
−
V
VBEF
forward base-emitter voltage
IE = 25 mA
−
−
1.05
V
ICBO
collector-base leakage current
VCB = 10 V; IE = 0
−
−
100
nA
IEBO
emitter-base leakage current
VEB = 1 V; IC = 0
−
−
100
nA
hFE
DC current gain
IC = 5 mA; VCE = 6 V
100
150
200
IC = 15 mA; VCE = 6 V
−
150
−
0.3
−
pF
AC characteristics
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz
−
fT
transition frequency
IC = 15 mA; VCE = 6 V; fm = 1 GHz
7
9
−
GHz
|s21|2
insertion gain
IC = 15 mA; VCE = 6 V; f = 1 GHz
13
15
−
dB
GUM
maximum unilateral power gain;
note 1
IC = 15 mA; VCE = 6 V;
Tamb = 25 °C; f = 1 GHz
−
16
−
dB
IC = 15 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
−
10
−
dB
ΓS = Γopt; IC = 5 mA; VCE = 6 V;
f = 1 GHz
−
1.5
2.5
dB
ΓS = Γopt; IC = 5 mA; VCE = 6 V;
f = 2 GHz
−
2.1
−
dB
NF
noise figure
Note
s 21 2
- dB
1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log ------------------------------------------------------( 1 – s 11 2 ) ( 1 – s 22 2 )
2001 Jan 18
4
Philips Semiconductors
Preliminary specification
UHF wideband transistor
PBR941B
MDA871
400
MCD974
160
handbook, halfpage
handbook, halfpage
Ptot
(mW)
hFE
300
120
200
70
100
40
0
0
50
100
150
Ts (°C)
0
200
0
10
20
30
40
50
IC (mA)
VCE = 6 V.
Fig.2
Power derating as a function of soldering
point temperature.
Fig.3
MGS498
DC current gain as a function of collector
current; typical values.
MCD975
10
0.5
handbook, halfpage
handbook, halfpage
fT
(GHz)
Cre
(pF)
0.4
8
0.3
6
0.2
4
0.1
2
0
0
0
4
8
VCB (V)
0
12
10
20
I C = Ic = 0; f = 1 MHz.
VCE = 6 V; fm = 1 GHz; Tamb = 25 °C.
Fig.4
Fig.5
Feedback capacitance as a function of
collector-base voltage; typical values.
2001 Jan 18
5
30
40
50
IC (mA)
Transition frequency as a function of
collector current; typical values.
Philips Semiconductors
Preliminary specification
UHF wideband transistor
PBR941B
MGS500
gain
(dB)
handbook, halfpage
MSG
gain
(dB)
Gmax
40
16
MGS501
50
20
handbook, halfpage
GUM
12
30
8
20
4
10
GUM
MSG
Gmax
0
102
0
0
10
20
30
I C (mA)
40
103
f = 1 GHz; VCE = 6 V.
GUM = maximum unilateral power gain.
MSG = maximum stable gain.
Gmax = maximum available gain.
I C = 5 mA; VCE = 6 V.
GUM = maximum unilateral power gain.
MSG = maximum stable gain.
Gmax = maximum available gain.
Fig.6
Fig.7
Gain as a function of collector current;
typical values.
MGR502
50
f (MHz)
Gain as a function of frequency; typical
values.
MGS503
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
40
104
40
GUM
30
30
MSG
MSG
GUM
20
20
Gmax
Gmax
10
10
0
102
103
f (MHz)
0
102
104
103
I C = 15 mA; VCE = 6 V.
GUM = maximum unilateral power gain.
MSG = maximum stable gain.
Gmax = maximum available gain.
I C = 30 mA; VCE = 6 V.
GUM = maximum unilateral power gain.
MSG = maximum stable gain.
Gmax = maximum available gain.
Fig.8
Fig.9
Gain as a function of frequency; typical
values.
2001 Jan 18
6
f (MHz)
104
Gain as a function of frequency; typical
values.
Philips Semiconductors
Preliminary specification
UHF wideband transistor
PBR941B
MGS504
4
MGS505
4
handbook, halfpage
handbook, halfpage
NF
(dB)
NF
(dB)
(1)
3
3
(2)
(1)
2
(2)
(3)
2
(3)
1
0
10−1
(4)
(5)
(6)
1
1
10
IC (mA)
0
102
102
VCE = 6 V.
f (MHz)
104
VCE = 6 V.
(1) f = 2 GHz.
(4) f = 900 MHz.
(1) IC = 30 mA.
(2) f = 1.5 GHz.
(5) f = 800 MHz.
(2) IC = 15 mA.
(3) f = 1 GHz.
(6) f = 500 MHz.
(3) IC = 5 mA.
Fig.10 Minimum noise figure as a function of
collector current; typical values.
2001 Jan 18
103
Fig.11 Minimum noise figure as a function of
frequency; typical values.
7
Philips Semiconductors
Preliminary specification
UHF wideband transistor
handbook, full pagewidth
PBR941B
unstable region
source
unstable
region load
90°
1.0
+1
135°
45°
+2
+ 0.5
0.8
0.6
+ 0.2
0.4
+5
Γopt
0.2
(1)
180°
0.5
0
1
2 (4)
0°
0
(5)
(3)
f = 1 GHz; VCE = 6 V;
I C = 5 mA; Zo = 50 Ω.
5
(2)
(6)
− 0.2
−5
(1) G = 17 dB.
(2) G = 16 dB.
(3) G = 15 dB.
− 0.5
−135°
(4) NF = 1.6 dB.
−2
(5) NF = 1.8 dB.
− 45°
−1
(6) NF = 2 dB.
1.0
− 90°
MGS506
Fig.12 Common emitter available gain, noise and stability circles; typical values.
handbook, full pagewidth
unstable
region load
90°
unstable region
source
1.0
+1
135°
45°
+2
+ 0.5
0.8
0.6
+ 0.2
0.4
+5
Γopt
(1)
180°
0
0.5
1
0.2
2
5
0°
(5)
0.2
0
(6)
(7)
(2)
f = 2 GHz; VCE = 6 V; IC = 5 mA;
Zo = 50 Ω.
(3)
(1) Gmax = 10.9 dB.
(4)
(2) G = 10 dB.
(3) G = 9 dB.
(4) G = 8 dB.
(5) NF = 2.1 dB.
−5
− 0.2
−135°
− 0.5
−2
− 45°
−1
1.0
(6) NF = 2.3 dB.
(7) NF = 2.5 dB.
− 90°
MGS507
Fig.13 Common emitter available gain, noise and stability circles; typical values.
2001 Jan 18
8
Philips Semiconductors
Preliminary specification
UHF wideband transistor
PBR941B
90°
handbook, full pagewidth
1.0
+1
135°
45°
+2
+ 0.5
0.8
0.6
+ 0.2
0.4
+5
0.2
3 GHz
180°
0.2
0
0.5
1
2 GHz
2
5
0°
0
1 GHz
100 MHz
500 MHz
− 0.2
−5
200 MHz
−135°
− 0.5
−2
− 45°
−1
1.0
− 90°
VCE = 6 V; IC = 15 mA; Zo = 50 Ω.
MGS508
Fig.14 Common emitter input reflection coefficient (s 11); typical values.
90°
handbook, full pagewidth
135°
45°
200 MHz
500 MHz
1 GHz
2 GHz
3 GHz
100 MHz
180°
50
40
30
20
0°
10
−135°
− 45°
− 90°
MGS509
VCE = 6 V; IC = 15 mA.
Fig.15 Common emitter forward transmission coefficient (s21); typical values.
2001 Jan 18
9
Philips Semiconductors
Preliminary specification
UHF wideband transistor
PBR941B
90°
handbook, full pagewidth
135°
45°
3 GHz
2 GHz
180°
0.5
0.4
0.3
0.2
1 GHz
500 MHz
200 MHz
100 MHz
0.1
0°
−135°
− 45°
− 90°
MGS510
VCE = 6 V; IC = 15 mA.
Fig.16 Common emitter reverse transmission coefficient (s12); typical values.
90°
handbook, full pagewidth
1.0
+1
135°
0.8
45°
+2
+ 0.5
0.6
+ 0.2
0.4
+5
0.2
180°
0.2
0
0.5
1
5
0°
0
1 GHz
500 MHz
2 GHz
100 MHz
3 GHz
200 MHz − 5
− 0.2
−135°
2
− 0.5
−2
− 45°
−1
1.0
− 90°
MGS511
VCE = 6 V; IC = 15 mA; Zo = 50 Ω.
Fig.17 Common emitter output reflection coefficient (s22); typical values.
2001 Jan 18
10
Philips Semiconductors
Preliminary specification
UHF wideband transistor
PBR941B
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2001 Jan 18
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
TO-236AB
11
Philips Semiconductors
Preliminary specification
UHF wideband transistor
PBR941B
DATA SHEET STATUS
DATA SHEET STATUS
PRODUCT
STATUS
DEFINITIONS (1)
Objective specification
Development
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
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work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Jan 18
12
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SCA 71
© Philips Electronics N.V. 2001
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Printed in The Netherlands
603508/03/pp13
Date of release: 2001
Jan 18
Document order number:
9397 750 07945
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