Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT110N03
Power MOSFET
N-CHANNEL ENHANCEMENT
MODE
„
DESCRIPTION
The UT110N03 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
„
FEATURES
* VDS(V)=26V
* ID=110A
* RDS(ON) [email protected]=10 V
* RDS(ON) [email protected]=4.5 V
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT110N03L-TA3-T
UT110N03G-TA3-T
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
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QW-R502-367.B
UT110N03
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
110
A
Pulsed Drain Current (Note 2)
IDM
440
A
Single Pulsed Avalanche Current (Note 3)
IAS
35
A
Single Pulsed Avalanche Energy (Note 3)
EAS
875
mJ
Power Dissipation
PD
100
W
Junction Temperature
TJ
+175
°C
Strong Temperature
TSTG
-55 ~ +175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by maximum junction temperature
3. L = 0.5mH, IAS = 35A, VDD = 25V, RG = 25Ω, Starting TJ = 25°C.
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
„
SYMBOL
θJA
θJC
RATINGS
62.5
1.5
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS(Note1)
Gate Threshold Voltage
Static Drain-Source On-Resistance
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS =0V, ID =250 µA
VDS=26V,VGS =0 V
VDS =0V, VGS =±20 V
30
VGS(TH)
VDS =VGS, ID =250 µA
VGS =10V, ID =50 A
VGS =4.5V, ID =40 A
1
RDS(ON)
DYNAMIC PARAMETERS (Note 2)
Input Capacitance
CISS
Output Capacitance
COSS VDS =15V, VGS =0V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS(Note 2)
Total Gate Charge
QG
VDS =15V, VGS =5V, ID =16A
Gate Source Charge
QGS
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=15V, ID =1A, RGEN =6Ω
Turn-ON Rise Time
tR
Turn-OFF Delay Time
tD(OFF) VGS =10 V
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=20 A,VGS=0 V
Drain-Source Diode Forward Current
IS
Notes: 1. Pulse Test: Pulse Width<300μs, Duty Cycle<2%
2. Guaranteed by design, not subject to production testing.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
3.9
5.2
MAX
UNIT
1
±100
V
µA
nA
3
4.8
7.0
V
mΩ
mΩ
9500
800
300
50
20.8
19
25.7
10
128
34
pF
pF
pF
65
50
20
200
70
nC
nC
nC
ns
ns
ns
ns
1.5
90
V
A
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UT110N03
„
Power MOSFET
TEST CIRCUIT AND WAVEFORM
Switching Time Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Switching Waveforms
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QW-R502-367.B
UT110N03
Power MOSFET
TYPICAL CHARACTERISTICS
„
Drain Current vs.
Drain-Source Breakdown Voltage
300
Drain Current vs. Gate Threshold Voltage
300
250
Drain Current, ID (µA)
Drain Current, ID (µA)
250
200
150
100
200
150
100
50
50
0
0
0
5
10 15 20 25
30 35
40 45
0
Gate Threshold Voltage, VTH (V)
Drain-Source On-State Resistance
Characteristics
Drain Current vs.
Source to Drain Voltage
16
12
14
10
VGS=10V
ID=10A
12
Drain Current, ID (mA)
Drain Current, ID (A)
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Drain-Source Breakdown Voltage, BVDSS(V)
10
8
6
4
VGS=4.5V
ID=10A
2
8
6
4
2
0
0
0
150
50
100
Drain to Source Voltage, VDS (mV)
0
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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