Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT45N03
Power MOSFET
40A, 25V N-CHANNEL
POWER MOSFET
„
FEATURES
* RDS(ON) = 21mΩ @VGS = 10 V
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT45N03L-TM3-R
UT45N03G-TM3-R
UT45N03L-TN3-T
UT45N03G-TN3-T
UT45N03L-TN3-R
UT45N03G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
Package
TO-251
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
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UT45N03
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
25
V
Gate-Source Voltage
VGSS
±15
V
Continuous Drain Current
ID
40
A
Pulsed Drain Current (Note 1)
IDM
160
A
Power Dissipation
65
W
PD
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
„
SYMBOL
θJA
θJC
RATINGS
50
1.92
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Drain-Source Breakdown Voltage
ON CHARACTERISTICS
Gate-Threshold Voltage
SYMBOL
Drain-Source On-State Resistance
RDS(ON)
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V, ID=250μA
VGS(TH)
VDS =VGS, ID = 1mA
VGS=5V, ID=25A
VGS=10V, ID=25A
VGS=3.5V, ID=5.2A
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MAX
UNIT
0.05
10
10
100
V
µA
nA
1.5
17.5
13
22
2
24
21
40
25
VDS=25V, VGS =0V
VDS =0V, VGS = ±5V
DYNAMICCHARACTERISTICS
Input Capacitance
CISS
VDS =25 V, VGS =0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VGS = 10 V, VDD =15 V,
ID = 15 A, RG = 6Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
Total Gate Charge
QG
VDD =24V,VGS =5V, ID =40 A
Gate-to-Source Charge
QGS
Gate-to-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=25A,VGS=0V
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
UNISONIC TECHNOLOGIES CO., LTD
MIN TYP
1
700
290
200
V
mΩ
pF
10
60
35
40
19
5
8
20
90
60
60
0.95
1.2
ns
nC
11
V
40
A
160
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„
Power MOSFET
TYPICAL CHARACTERISTICS
Output Characteristics
45
10V
5V
6V
Transfer Characteristics
45
TJ=25℃
4V
VDS>ID×RDS(ON)
3.5V
30
30
3V
15
15
2.5V
175℃
VGS=2V
0
0.4
0.8
1.2
1.6
Drain-Source Voltage, VDS (V)
0
2
Normalized Total Power Dissipation
120
0
80
1
2
3
4
Gate-Source Voltage, VGS (V)
5
Normalized Continuous Drain Current
120
Normalized Continuous Drain Current,
ID (%)
Normalized Power Dissipation, Pder (%)
0
TJ=25℃
80
40
Pder=
0
×100%
PD(25°C)
50
100
150
Temperature, TC (℃)
200
Ider=
ID
ID(25°C)
×100%
0
0
50
100
150
Temperature, TC (℃)
200
Current Drain, ID (A)
Gate-Threshold Voltage, VGS(TH)(V)
0
PD
40
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UT45N03
Source Current, IS (A)
TYPICAL CHARACTERISTICS(Cont.)
ZthJmb (K/W)
Drain Current, ID (A)
C(pF)
Gate-Source Voltage, VGS (V)
RDS(ON) (Ω)
„
Power MOSFET
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UT45N03
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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