Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UTM2513
Power MOSFET
N-CHANNEL
ENHANCEMENT MODE
„
FEATURES
* RDS(ON) = 10.5mΩ(typ.) @VGS = 10 V
* RDS(ON) = 16mΩ(typ.) @VGS = 4.5 V
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified
„
SYMBOL
2.Drain
Lead-free: UTM2513L
Halogen-free: UTM2513G
1.Gate
3.Source
„
ORDERING INFORMATION
Normal
UTM2513-TN3-R
UTM2513-TN3-T
Ordering Number
Lead Free Plating
UTM2513L-TN3-R
UTM2513L-TN3-T
Halogen Free
UTM2513G-TN3-R
UTM2513G-TN3-T
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
Package
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Reel
Tube
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UTM2513
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
25
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
40
A
Pulsed Drain Current
IDM
90
A
Power Dissipation
PD
50
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
„
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance(Note)
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V, IDS=250µA
VDS=24V, VGS=0V
VDS=0V, VGS=±20V
25
VGS(TH)
VDS=VGS, IDS=250µA
VGS=10V, IDS=12A
VGS=4.5V, IDS=10A
1.30
RDS(ON)
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=15V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note)
tD(ON)
Turn-ON Rise Time
tR
IDS=1A, VDD=15V, RG=3Ω,
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
Total Gate Charge (Note)
QG
VDS=15V, VGS=10V, IDS=10A
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note)
VSD
ISD=10A, VGS=0V
Note: Pulse width ≤300us, duty cycle ≤2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
1
±100
1.80
10.5
16
2.50
13
23
1560
345
245
V
µA
nA
V
mΩ
pF
pF
pF
30
60
272
168
28
3.6
8.4
35
67
285
172
38
ns
ns
ns
ns
nC
nC
nC
0.9
1.3
V
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TYPICAL CHARACTERISTICS
Drain Current, ID (A)
„
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-228.A
UTM2513
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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