Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UTP45N02
Power MOSFET
N-CHANNEL
ENHANCEMENT MODE
„
DESCRIPTION
As N-Channel power MOSFETs the UTP45N02 is designed for
use in applications such as switching regulators, switching
converters, motor drivers and relay drivers.
„
FEATURES
* 45A, 20V
* RDS(ON) = 0.022Ω
* Temperature compensating PSPICE model
* Be driven directly from CMOS, NMOS, and TTL circuits
* Peak current vs. pulse width curve
„
SYMBOL
*Pb-free plating product number: UTP45N02L
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
UTP45N02-TN3-R
UTP45N02L-TN3-R
UTP45N02-TN3-T
UTP45N02L-TN3-T
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Copyright © 2008 Unisonic Technologies Co., Ltd
Package
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Reel
Tube
1 of 6
QW-R502-180.A
UTP45N02
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Derate Above 25℃
RATINGS
UNIT
20
V
±10
V
45
A
90
W
PD
W/℃
0.606
℃
Junction Temperature
TJ
+175
℃
Storage Temperature
TSTG
-55 ~ +175
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
„
SYMBOL
VDSS
VGSS
ID
SYMBOL
θJA
θJC
MIN
TYP
MAX
80
1.65
UNIT
℃/W
℃/W
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
BVDSS VGS =0V, ID =250 µA
20
Zero Gate Voltage Drain Current
IDSS
VDS=20V, VGS =0 V
Gate-to-Source Leakage Current
IGSS
VGS = ±10 V
ON CHARACTERISTICS
Gate to Source Threshold Voltage
VGS(TH) VDS =VGS, ID =250 µA
1
Drain-to-Source On Resistance
RDS(ON) VGS = 5V, ID =45 A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =15 V, VGS =0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Time
tON
Turn-ON Delay Time
tD(ON)
VGS =5 V, VDD =15 V,
Turn-ON Rise Time
tR
ID≈45 A, RGS = 5Ω,
Turn-OFF Delay Time
tD(OFF)
RL = 0.33Ω
Turn-OFF Fall-Time
tF
Turn-OFF Time
tOFF
Total Gate Charge
QG
VGS=0V~10V VDD = 16V,
Gate-Source Charge
QGS
VGS=0V ~ 5 V ID≈45A,
Gate-Drain Charge
QGD
VGS=0V~ 1 V RL = 0.35Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
ISD=45 A
Reverse Recovery Time
tRR
ISD = 45 A,dISD /dt = 100 A/µs
UNISONIC TECHNOLOGIES CO., LTD
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TYP
MAX
UNIT
1
±100
V
µA
nA
2
0.022
V
Ω
1300
724
250
pF
260
15
160
20
20
50
30
1.5
1.5
125
ns
60
60
36
1.8
nC
V
ns
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QW-R502-180.A
UTP45N02
Power MOSFET
Drain to Source On
Resistance,RDS(On) (mΩ)
Normalized On Resistance
Drain Current,ID (A)
On-State Drain Current,ID(ON) (A)
TYPICAL CHARACTERISTICS
„
Normalized Power Dissipation vs
Temperature Derating
50
1.0
Drain Current,ID (A)
Power Dissipation Multiplier
1.2
0.8
0.6
0.4
Maximum Continuous Drain Current
vs Case Temperature
40
30
20
10
0.2
0
0
25
50
75 100 125 150
Case Temperature,TC (℃)
175
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
0
25
50
75
100 125
150
Case Temperature,TC (℃)
175
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QW-R502-180.A
UTP45N02
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Switching Time (ns)
Avalanche Current,IAS (A)
„
Normalized Drain to Source
Breakdown Voltage
1.5
1.0
0.5
2500
-40
Capacitance vs. Drain to Source
Voltage
20
Capacitance,C (pF)
2000
1500
CISS
1000
COSS
500
0
0
CRSS
ID=250μA
1.5
1.0
0.5
-40
0
40
80 120 160
Junction Temperature,TJ (℃)
Normalized Switching Waveforms for
Constant Gate Current
VDD=BVDSS
15
5
0
5
15
10
Drain to Source Voltage,VDS (V)
20
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
20
G(REF)
G(ACT)
5.00
VDD=BVDSS
3.75
RL=0.44Ω
IG(REF)=0.5mA
VGS=5V
Plateau Voltage in
Descending Order:
VDD=BVDSS
VDD=0.75BVDSS
VDD=0.50BVDSS
VDD=0.25BVDSS
10
200
2.50
1.25
G(REF)
Time,t (μs) 80
G(ACT)
Gate to Source Voltage,VGS (V)
VGS=0V,f=1MHZ
Normalized Drain to Source Breakdown
Voltage vs Junction Temperature
0
-80
0
40
80 120 160 200
Junction Temperature,TJ (℃)
Drain to Source Voltage,VDS (V)
0
-80
2.0
VGS=VDS,ID=250μA
Normalized Gate Threhold
Voltage
2.0
Normalized Gate Threshold
Voltage vs Junction Temperature
0
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QW-R502-180.A
UTP45N02
Peak Current,IDM (A)
TYPICAL CHARACTERISTICS(Cont.)
Normalized Thermal
Impedance,ZθJC
Drain Current,ID (A)
„
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-180.A
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