Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UTT60N06
Power MOSFET
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET

DESCRIPTION
The UTC UTT60N06 is n-channel enhancement mode
power field effect transistors with stable off-state
characteristics, fast switching speed and low thermal
resistance. usually used at telecom and computer
applications.

FEATURES
* RDS(ON) < 18mΩ @VGS = 10 V
* Fast switching capability
* Avalanche energy Specified

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT60N06L-TA3-T
UTT60N06G-TA3-T
UTT60N06L-TN3-R
UTT60N06G-TN3-R
UTT60N06L-TQ2-T
UTT60N06G-TQ2-T
UTT60N06L-TQ2-R
UTT60N06G-TQ2-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Package
TO-220
TO-252
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tape Reel
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-575.D
UTT60N06

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
RATINGS
UNIT
60
V
±20
V
TC = 25°C
60
A
Continuous Drain Current
ID
TC = 100°C
39
A
Drain Current Pulsed (Note 2)
IDM
120
A
Avalanche Energy
Single Pulsed
EAS
100
mJ
TO-220/TO-263
100
W
Power Dissipation (TC=25°C)
PD
TO-252
70
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repeativity rating: pulse width limited by junction temperature

SYMBOL
VDSS
VGS
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
TO-220/TO-263
TO-252
TO-220/TO-263
TO-252
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJA
θJC
RATINGS
62.5
110
1.25
1.8
UNIT
°C/W
°C/W
°C/W
°C/W
2 of 8
QW-R502-575.D
UTT60N06

Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250μA
Drain-Source Leakage Current
IDSS
VDS = 60 V, VGS = 0 V
Forward
VGS = 20V, VDS = 0 V
Gate-Source Leakage Current
IGSS
Reverse
VGS = -20V, VDS = 0 V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 30 A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS = 0V, VDS =25V, f = 1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Rise Time
tR
VDD=48V, ID=60A, RL=0.5Ω,
VGS=10V (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Fall Time
tF
Total Gate Charge
QG
VDS = 30V, VGS = 10 V
Gate-Source Charge
QGS
ID = 60A (Note 1, 2)
Gate-Drain Charge (Miller Charge)
QGD
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
VGS = 0 V, IS = 60A
Continuous Source Current
IS
Pulsed Source Current
TYP
UNISONIC TECHNOLOGIES CO., LTD
MAX UNIT
60
2.0
14
1
100
-100
V
μA
nA
nA
4.0
18
V
mΩ
2000
400
115
12
11
25
15
39
12
10
ISM
Reverse Recovery Time
tRR
IS = 60A, VGS = 0 V,
dIF/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
2. Essentially independent of operating temperature.
www.unisonic.com.tw
MIN
pF
pF
pF
30
30
50
30
60
ns
ns
ns
ns
nC
nC
nC
1.6
60
V
120
60
3.4
A
ns
μC
3 of 8
QW-R502-575.D
UTT60N06

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 8
QW-R502-575.D
UTT60N06

Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
5 of 8
QW-R502-575.D
UTT60N06

Power MOSFET
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 8
QW-R502-575.D
UTT60N06

Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Normalized Thermal Transient Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.
01 -5
10
0.05
0.02
10-4
10-3
10-2
10-1
1
3
Square Wave Pulse Duration (sec)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 8
QW-R502-575.D
UTT60N06
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
8 of 8
QW-R502-575.D
Similar pages