Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UD4614
Power MOSFET
DUAL ENHANCEMENT MODE
(N-CHANNEL/P-CHANNEL)

1
DESCRIPTION
TO-252-4
The UTC UD4614 can provide excellent RDS(ON) and low gate
charge by using advanced trench technology MOSFETs. The
UTC UD4614 may be used in H-bridge, inverters and other
applications.

FEATURES
* N-Channel: 40V/6A
RDS(ON) < 23.2mΩ (typ.) @ VGS =10V
RDS(ON) < 32.6mΩ (typ.) @ VGS= 4.5V
* P-Channel: -40V/-5A
RDS(ON) < 34.7mΩ (typ.) @ VGS= -10V
RDS(ON) < 50.6mΩ (typ.) @ VGS= -4.5V
* Super high dense cell design
* Reliable and Rugged


SOP-8
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
UD4614L-TN4-R
-
Halogen Free
UD4614G-TN4-R
UD4614G-S08-R
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Copyright © 2015 Unisonic Technologies Co., Ltd
Package
Packing
TO-252-4
SOP-8
Tape Reel
Tape Reel
1 of 9
QW-R502-147.G
UD4614

Power MOSFET
MARKING
TO-252-4

SOP-8
PIN CONFIGURATION
Source1 1
8
Drain1
Gate1 2
7
Drain1
5
4
3
Source2
3
6
Drain2
Gate2
4
5
Drain2
SOP-8
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2
1
G2
S2
D1/D2
G1
S1
TO-252-4
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
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
N-Channel:
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note3)
Pulsed Drain Current (Note3)
TA=25°C
Power Dissipation
TA=70°C
SYMBOL
VDS
VGS
ID
IDM
TO-252-4
SOP-8
TO-252-4
SOP-8
Junction Temperature
Storage Temperature
PD
TJ
TSTG
RATINGS
40
±20
6
20
3.125
2
2
1.28
-55 ~ +150
-55 ~ +150
UNIT
V
V
A
A
W
W
W
W
°C
°C
P-Channel:
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note3)
Pulsed Drain Current (Note3)
RATINGS
UNIT
-40
V
±20
V
-5
A
-20
A
TO-252-4
3.125
W
TA=25°C
SOP-8
2
W
Power Dissipation
PD
TO-252-4
2
W
TA=70°C
SOP-8
1.28
W
Junction Temperature
TJ
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VDS
VGS
ID
IDM
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
TO-252-4
Junction to Ambient
SOP-8
Note: Surface Mounted on 1in 2 pad area, t ≤ 10 sec.
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www.unisonic.com.tw
SYMBOL
θJA
RATINGS
40
62.5
UNIT
°C/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
N-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note2)
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V, ID=10mA
VDS=32V, VGS=0V
VDS=0V, VGS=±20V
40
VGS(TH)
VDS=VGS, ID=250uA
VGS=10V, ID=6A
VGS=4.5V, ID=5A
1
RDS(ON)
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V,VDS=20V,f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
tD(ON)
VDS=20V, VGS=10V,
Turn-ON Rise Time
tR
RG=3Ω, ID=1A
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
Total Gate Charge (Note2)
QG
VDS=20V, VGS=10V, ID=6A
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
IS=1A, VGS=0V
Diode Continuous Forward Current
IS
Reverse Recovery Time
tRR
IDS=6A, dI/dt=100A/μs
Reverse Recovery Charge
QRR
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MIN
TYP
2.3
23.2
32.6
MAX UNIT
1
±100
V
uA
nA
3
31
45
V
mΩ
mΩ
780
110
86
pF
pF
pF
32
40
172
64
95
6.3
6.3
ns
ns
ns
ns
nC
nC
nC
0.77
20.5
14.5
1
3
V
A
ns
nC
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Power MOSFET
ELECTRICAL CHARACTERISTICS (Cont.)
P-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note2)
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V, ID=-10mA
VDS=-32V, VGS=0V
VDS=0V, VGS=±20V
-40
VGS(TH)
VDS=VGS, ID=-250uA
VGS=-10V, ID=-5A
VGS=-4.5V, ID=-2A
-1
RDS(ON)
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V,VDS=-20V,f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
tD(ON)
VDS=-20V, VGS=-10V,
Turn-ON Rise Time
tR
RG=3Ω, ID=1A
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
Total Gate Charge (Note2)
QG
VDS=-20V, VGS=-10V, ID=-5A
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
IS=-1A, VGS=0V
Diode Continuous Forward Current
IS
Reverse Recovery Time
tRR
IDS=-5A, dI/dt=100A/μs
Reverse Recovery Charge
QRR
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width≤300us, duty cycle ≤2%.
2
3. Surface Mounted on 1in pad area, t≤10sec.
UNISONIC TECHNOLOGIES CO., LTD
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MIN
TYP
-1.9
34.7
50.6
MAX UNIT
-1
±100
V
uA
nA
-3
45
63
V
mΩ
mΩ
1120
115
91
pF
pF
pF
34
48
224
108
90
5.8
5.3
ns
ns
ns
ns
nC
nC
nC
-0.75
22.3
15.2
-1
-3.2
V
A
ns
nC
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TYPICAL CHARACTERISTICS

N-CHANNEL
On-Resign Characteristics
Drain Current, ID(A)
25
10V
Transfer Characteristics
20
5V
VDS=5V
4.5V
Drain Current, ID(A)
30
20
4V
15
10
VGS=3.5V
5
1
3
4
2
Drain Source Voltage, VDS(V)
10
125℃
25℃
5
0
5
2
2.5
3
3.5
4
Gate Source Voltage, VGS(V)
4.5
Capacitance (pF)
Gate Source Voltage, VGS (V)
Source Current, IS (A)
On-Resistance, RDS(ON) (mΩ)
0
0
15
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Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)

Single Pulse Power Rating Junctionto-Ambient
Maximum Forward Biased Safe
Operating Area
40
100.0
TJ(Max)=150℃
TA=25℃
10μs
30
100μs
10.0
1ms
Power (w)
Drain Current, ID (A)
RDS (ON) Limited
10ms
10s
1.0
1s
TJ(Max)=150℃
TA=25℃
1
10
Drain Source Voltage, VDS (V)
0
0.001
100
0.01
0.1
1
10
Pulse Width (s)
100
1000
Normalized Transient Thermal
Resistance,ZθJA
0.1
0.1
10
0.1s
DC
20
On-Resistance vs. Drain Current
and Gate Voltage
On-Resistance, RDS(ON) (mΩ)
50
40
VGS=4.5V
30
VGS=10V
20
0
5
10
15
20
Drain Current, ID (A)
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Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)

Drain Current, -ID (A)
Drain Current, -ID (A)
P-CHANNEL
On-Resistance vs. Gate-Source Voltage
160
1.0E+00
ID=-5A
Source Current, -IS (A)
On-Resistance, RDS(ON) (mΩ)
140
120
100
125℃
80
60
40
2
5
6
7
8
9
4
Gate Source Voltage, -VGS (V)
1.0E-02
1.0E-03
10
1.0E-06
0.0
Gate-Charge Characteristics
800
6
4
COSS
0
0
15
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CISS
400
200
5
10
Gate Charge, -QG (nC)
1.0
600
2
0
0.2
0.1
0.6
0.8
Source Drain Voltage, -VSD (V)
Capacitance Characteristics
1000
VDS=-20V
ID=-5A
8
25℃
1.0E-04
Capacitance (pF)
Gate Source Voltage, -VGS (V)
3
125℃
1.0E-01
1.0E-05
25℃
20
10
Body-Diode Characteristics
1.0E+01
CRSS
0
10
20
30
40
Drain Source Voltage, -VDS (V)
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TYPICAL CHARACTERISTICS(Cont.)
Normalized Transient Thermal
Resistance,ZθJA
Power (W)
Drain Current, -ID (A)

On-Resistance vs. Drain Current
and Gate Voltage
60
55
VGS=-4.5V
50
45
40
VGS=-10V
35
30
0
2
4
6
8
10
Drain Current, -ID (A)
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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