UNISONIC TECHNOLOGIES CO., LTD UFZ44 Power MOSFET 50 A, 60 V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC UFZ44 is an N-channel mode Power MOSFET, using UTC’s advanced technology to provide customers with a minimum on-state resistance, superior switching performance, cost-effectiveness and ruggedizd device design. FEATURES 1 * RDS(ON) < 28mΩ @ VGS=10V, ID=31A * High Switching Speed * Improved dv/dt Capability TO-220F1 SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UFZ44L-TA3-T UFZ44G-TA3-T UFZ44L-TF1-T UFZ44G-TF1-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 Pin Assignment 1 2 3 G D S G D S Packing Tube Tube MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R107-066.C UFZ44 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL VDSS VGSS RATINGS UNIT 60 V ±20 V TC=25°C (Note 2) 50 A Continuous, VGS at 10V ID Drain Current TC=100°C 36 A 200 A Pulsed (Note 3) IDM Single Pulsed Avalanche Energy (Note 4) EAS 100 mJ Peak Diode Recovery dv/dt (Note 5) dv/dt 4.5 V/ns TO-220 150 W Power Dissipation TC=25°C PD TO-220F1 70 W Linear De-rating Factor 1.0 W/°C Junction Temperature TJ 150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Current limited by the package, (die current = 51 A). 3. Repetitive rating; pulse width limited by maximum junction temperature. 4. VDD = 25 V, starting TJ = 25 °C, L = 44 µH, RG = 25 Ω, IAS = 51 A. 5. ISD ≤51 A, dI/dt ≤ 250 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. Drain-Source Voltage Gate-Source Voltage THERMAL DATA PARAMETER Junction to Ambient Junction to Case TO-220/TO-220F1 TO-220 TO-220F1 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62 1.0 1.78 UNIT °C/W °C/W °C/W 2 of 6 QW-R107-066.C UFZ44 Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate- Source Leakage Current SYMBOL BVDSS ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall-Time ID=250µA, VGS=0V MIN IGSS VGS(TH) RDS(ON) CISS COSS CRSS QG QGS QGD tD(ON) tR tD(OFF) tF TYP V 0.060 VDS=60V, VGS=0V VDS=48V, VGS=0V, TJ=125°C VGS=+20V VGS=-20V, VDS=VGS, ID=250µA VGS=10V, ID=31A (Note 2) VGS=0V, VDS=25V, f=1.0MHz V/°C 25 250 +100 -100 2.0 4.0 28 1900 920 170 14 110 45 92 µA nA nA V mΩ pF pF pF 67 18 25 VGS=10V, VDS=48V, ID=51A (Note 2) VDD=30V, ID=51A, RG=9.1Ω, RD=0.55 Ω (Note 2) MAX UNIT 60 △BVDSS/△TJ Reference to 25°C, ID=1mA IDSS Forward Reverse TEST CONDITIONS nC nC nC ns ns ns ns D (2) Between lead, 6 4.5 nH mm (0.25") from package and G (1) center of die Internal Source Inductance LS 7.5 nH S (3) contact SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS MOSFET Maximum Body-Diode Continuous IS 50 A symbol showing Current the integral reverse p - n 200 A Maximum Body-Diode Pulsed Current ISM junction diode Drain-Source Diode Forward Voltage VSD IS=51A, VGS=0V, TJ=25°C(Note 2) 2.5 V Body Diode Reverse Recovery Time tRR 120 180 ns IF=51A, dI/dt=100A/µs, TJ=25°C 0.53 0.80 nC Body Diode Reverse Recovery Charge QRR Intrinsic turn-on time is negligible (turn-on is dominated by Forward Turn-On Time tON LS and LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%. Internal Drain Inductance LD UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R107-066.C UFZ44 Power MOSFET TEST CIRCUITS AND WAVEFORMS Gate Charge Test Circuit Gate Charge Waveforms VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Unclamped Inductive Switching Waveforms Unclamped Inductive Switching Test Circuit VDS RG 2 EAS= 1 2 LIAS BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time 4 of 6 QW-R107-066.C UFZ44 Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver ) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R107-066.C UFZ44 Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 Drain Current, ID (µA) Drain Current, ID (µA) 300 200 150 100 200 150 100 50 0 50 0 20 40 60 80 0 0 100 Drain Current, ID (A) 16 14 12 10 VGS=10V, ID=20A 8 6 4 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Drain to Source Voltage, VDS (V) Body-Diode Continuous Current, IS (A) Drain-Source On-State Resistance Characteristics 18 1 1.5 2 2.5 3 3.5 Gate Threshold Voltage, VTH (V) Drain-Source Breakdown Voltage, BVDSS (V) 20 0.5 56 Body-Diode Continuous Current vs. Source to Drain Voltage 48 40 32 24 16 8 0 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R107-066.C