Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UTD36N03
Power MOSFET
N-CHANNEL
ENHANCEMENT MODE

FEATURES
* RDS(ON) < 17mΩ @VGS = 10 V
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTD36N03L-TA3-T
UTD36N03G-TA3-T
UTD36N03L-TN3-T
UTD36N03G-TN3-T
UTD36N03L-TN3-R
UTD36N03G-TN3-R
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
Package
TO-220
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
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QW-R502-179.B
UTD36N03

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
RATINGS
UNIT
30
V
±20
V
43.4
A
173.6
A
TO-220
1.9
W
Power Dissipation
PD
TO-252
1.6
W
Junction Temperature
TJ
+175
°С
Storage Temperature
TSTG
-55 ~ +175
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VDSS
VGSS
ID
IDM
THERMAL DATA
PARAMETER
Junction-to-Ambient

SYMBOL
TO-220
TO-252
θJA
RATINGS
62.5
75
UNIT
°С/W
°С/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate-Threshold Voltage
SYMBOL
Drain-Source On-State Resistance
RDS(ON)
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS =0V, ID =250 µA
VDS =24V, VGS =0V
VGS = ±20V, VGS =0V
30
VGS(TH)
VDS=VGS, ID=250 µA
VGS =4.5V, ID =12A
VGS=10 V, ID =25 A
1
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS =25 V, VGS =0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDS =15 V, VGS =10V,
RG =10Ω, RL =0.6 Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
Total Gate Charge
QG
Gate-Source Charge
QGS
VDS =15V,VGS =10V,ID =36 A
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=25A, VGS=0V
Maximum Continuous Drain-Source
IS
Diode Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
tRR
VR=15V,IF=IS, dIF/dt=100A/μs
Reverse Recovery Charge
QRR
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
0.05
10
1
100
1.5
18
14
2
22
17
V
mΩ
690
160
110
pF
6
10
33
19
18.5
4.2
2.9
0.97
V
µA
nA
ns
nC
1.2
V
43.4
A
173.6
15
2
18
3
ns
nC
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UTD36N03
TYPICAL CHARACTERISTICS
Drain Current,ID (A)
Gate Threshold Voltage,VGS(TH) (V)
Ider (%)
Pder (%)
Drain Current,ID (A)
Drain Current,ID (A)

Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-179.B
Capacitance,C (pF)
Gate to Source Voltage,VGS (V)
Reverse Drain Current,IS (A)
Drain to Source OnResistance,RDS(ON) (mΩ)

Drain Current,ID (A)
Drain Current,ID (A)
UTD36N03
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
QW-R502-179.B
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UTD36N03
TYPICAL CHARACTERISTICS(Cont.)
ZthJmb (K/W)

Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-179.B
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