UNISONIC TECHNOLOGIES CO., LTD 75N75 Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET 1 FEATURES * RDS(ON)=11mΩ @VGS=10V, ID=40A * Ultra low gate charge ( typical 117 nC ) * Fast switching capability * Low reverse transfer Capacitance (CRSS= typical 240 pF ) * Avalanche energy Specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 75N75L-TA3-T 75N75G-TA3-T 75N75L-TF1-T 75N75G-TF1-T 75N75L-TF2-T 75N75G-TF2-T 75N75L-TF3-T 75N75G-TF3-T 75N75L-TQ2-T 75N75G-TQ2-T 75N75L-TQ2-R 75N75G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd. TO-220F TO-220 DESCRIPTION The UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. 1 1 1 TO-220F1 TO-220F2 1 TO-263 Package TO-220 TO-220F1 TO-220F2 TO-220F TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel 1 of 6 QW-R502-097.F 75N75 Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 75 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current TC = 25°C ID 80 A Pulsed Drain Current (Note 2) IDM 320 A Single Pulsed Avalanche Energy (Note 3) EAS 700 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 12 V/ns TO-220/TO-263 300 W Power Dissipation TO-220F/ TO-220F1 PD 48 W TO-220F2 50 W Junction Temperature TJ +175 °C Storage Temperature TSTG -55 ~ +175 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by safe operating area 3. Starting TJ=25°C, ID=40A, VDD=37.5V 4. ISD≤80A, di/dt≤300A/µs, VDD≤BVDSS, TJ≤TJMAX THERMAL DATA PARAMETER SYMBOL θJA Junction to Ambient Junction to Case TO-220/TO-263 TO-220F/ TO-220F1 TO-220F2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJC RATINGS 62.5 0.5 2.6 2.5 UNIT °C/W °C/W °C/W °C/W 2 of 6 QW-R502-097.F 75N75 Power MOSFET ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS VGS = 0 V, ID = 250 µA VDS = 75 V, VGS = 0 V VGS = 20V, VDS = 0 V VGS = -20V, VDS = 0 V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 µA Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 40 A DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS = 0 V, VDS = 25 V Output Capacitance COSS f = 1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD = 37.5V, ID =45A, VGS=10V, RG=4.7Ω Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS = 60V, VGS = 10 V Gate-Source Charge QGS ID = 80A Gate-Drain Charge QGD SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note 2) VSD VGS = 0 V, IS = 80A Continuous Source Current IS Pulsed Source Current (Note 1) ISM Reverse Recovery Time tRR IS = 80A, VDD = 25 V dIF / dt = 100 A/µs Reverse Recovery Charge QRR Note: 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 75 2.0 3.0 9.5 1 100 -100 V µA nA nA 4.0 11 V mΩ 3700 773 86 133 208 354 246 430 70 102 132 660 pF pF pF 150 232 370 260 440 ns ns ns ns nC nC nC 1.5 80 320 V A A ns µC 3 of 6 QW-R502-097.F 75N75 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VD S + - L RG Drive r * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. VGS VDD 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) P.W. Period D= P. W. Period VGS=10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-097.F 75N75 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) 2A Switching Test Circuit 3A Gate Charge Test Circuit 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2B Switching Waveforms 3B Gate Charge Waveform 4B Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-097.F 75N75 Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 450 300 400 Drain Current, ID (µA) Drain Current, ID (µA) 250 200 150 100 50 0 350 300 250 200 150 100 50 0 0.5 1 1.5 2.0 2.5 3.0 0 3.5 4.0 0 Gate Threshold Voltage, VTH (V) 40 60 80 100 Drain-Source Breakdown Voltage, BVDSS(V) Drain-Source On-State Resistance Characteristics 2 20 Drain Current vs. Source to Drain Voltage 12 1.8 10 1.4 VGS=10V ID=1A 1.2 Drain Current, ID (A) Drain Current, ID (A) 1.6 VGS=10V ID=20A 1 0.8 0.6 0.4 8 6 4 2 0.2 0 0 0 50 100 150 200 Drain to Source Voltage, VDS (mV) 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-097.F