UNISONIC TECHNOLOGIES CO., LTD UK4145 Preliminary Power MOSFET SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The UTC UK4145 is N-channel power MOSFET, suitable for high current switching applications. FEATURES * Low on-state resistance: RDS(ON) =10mΩ (Max.) @ VGS =10V, ID =42A * Low input capacitance: CISS = 5300pF (Typ.) SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UK4145L-TA3-T UK4145G-TA3-T UK4145L-TQ2-T UK4145G-TQ2-T UK4145L-TQ2-R UK4145G-TQ2-R www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Package TO-220 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tape Reel 1 of 4 QW-R502-364.b UK4145 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (VGS =0 V) VDSS 60 V Gate-Source Voltage (VDS =0 V) VGSS ±20 V ID ±84 A DC (TC =25°C) Drain Current Pulse (Note 2) IDM ±215 A Single Avalanche Current (Note 3) IAS 32 A Single Avalanche Energy (Note 3) EAS 102 mJ Power Dissipation (TA =25°C) PD 1.5 W Junction Temperature TJ 150 °C Strong Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. PW≤10μs, Duty Cycle≤ 1% 3. L = 100μH, VDD =30V, RG =25Ω, VGS =20Æ 0V, Starting TJ =25°C, THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 83.3 1.49 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA Drain-Source Leakage Current IDSS VDS =60V,VGS =0V Gate-Source Leakage Current IGSS VDS =0V, VGS =±20V ON CHARACTERISTICS Gate Threshold Voltage VGS(OFF) VDS =10V, ID =1mA Drain to Source On-state Resistance RDS(ON) VGS =10 V, ID =42 A (Note) DYNAMIC PARAMETERS Input Capacitance CISS VDS =10V, VGS =0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=30V, VGS =10V ID =42A, RG =0Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge QG VDD =48V, VGS =10V, ID =84A Gate Source Charge QGS Gate Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS =0V, IS =84A (Note) Reverse Recovery Time tRR IS =84A,VGS =0V, di/dt =100A/μs Reverse Recovery Charge QRR Note: Pulsed UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 60 2.0 10 ±100 µA nA 3.0 4.0 V 7 10 mΩ 5300 540 330 pF Pf pF 25 17 66 9 90 21 30 ns ns ns ns nC nC nC 1.0 43 62 1.5 V ns nC 2 of 4 QW-R502-364.b UK4145 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS RL RG VDD D.U.T. PG. Pulse Width=1μs Duty Factor≤1% Switching Test Circuit Switching Waveforms BVDSS 50Ω PG. VDD D.U.T. VGS=20→0V ID VDS VDD Starting TJ Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms RL IG=2mA PG. IAS L RG=25Ω VDD 50Ω D.U.T. Gate Charge Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R502-364.b UK4145 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-364.b