Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UK4145
Preliminary
Power MOSFET
SWITCHING N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC UK4145 is N-channel power MOSFET, suitable for high
current switching applications.
„
FEATURES
* Low on-state resistance:
RDS(ON) =10mΩ (Max.) @ VGS =10V, ID =42A
* Low input capacitance:
CISS = 5300pF (Typ.)
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UK4145L-TA3-T
UK4145G-TA3-T
UK4145L-TQ2-T
UK4145G-TQ2-T
UK4145L-TQ2-R
UK4145G-TQ2-R
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
Package
TO-220
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
1 of 4
QW-R502-364.b
UK4145
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (VGS =0 V)
VDSS
60
V
Gate-Source Voltage (VDS =0 V)
VGSS
±20
V
ID
±84
A
DC (TC =25°C)
Drain Current
Pulse (Note 2)
IDM
±215
A
Single Avalanche Current (Note 3)
IAS
32
A
Single Avalanche Energy (Note 3)
EAS
102
mJ
Power Dissipation (TA =25°C)
PD
1.5
W
Junction Temperature
TJ
150
°C
Strong Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. PW≤10μs, Duty Cycle≤ 1%
3. L = 100μH, VDD =30V, RG =25Ω, VGS =20Æ 0V, Starting TJ =25°C,
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
„
SYMBOL
θJA
θJC
RATINGS
83.3
1.49
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250μA
Drain-Source Leakage Current
IDSS
VDS =60V,VGS =0V
Gate-Source Leakage Current
IGSS
VDS =0V, VGS =±20V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(OFF)
VDS =10V, ID =1mA
Drain to Source On-state Resistance
RDS(ON)
VGS =10 V, ID =42 A
(Note)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =10V, VGS =0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=30V, VGS =10V
ID =42A, RG =0Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
Total Gate Charge
QG
VDD =48V, VGS =10V, ID =84A
Gate Source Charge
QGS
Gate Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS =0V, IS =84A
(Note)
Reverse Recovery Time
tRR
IS =84A,VGS =0V, di/dt =100A/μs
Reverse Recovery Charge
QRR
Note: Pulsed
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
60
2.0
10
±100
µA
nA
3.0
4.0
V
7
10
mΩ
5300
540
330
pF
Pf
pF
25
17
66
9
90
21
30
ns
ns
ns
ns
nC
nC
nC
1.0
43
62
1.5
V
ns
nC
2 of 4
QW-R502-364.b
UK4145
„
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
RL
RG
VDD
D.U.T.
PG.
Pulse Width=1μs
Duty Factor≤1%
Switching Test Circuit
Switching Waveforms
BVDSS
50Ω
PG.
VDD
D.U.T.
VGS=20→0V
ID
VDS
VDD
Starting TJ
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
RL
IG=2mA
PG.
IAS
L
RG=25Ω
VDD
50Ω
D.U.T.
Gate Charge Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R502-364.b
UK4145
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R502-364.b
Similar pages