Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UT120N03
Power MOSFET
120A, 30V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
1
The UTC UT120N03 is a N-channel power MOSFET using UTC’s
advanced trench technology to provide customers with a minimum
on-state resistance and superior switching performance.
The UTC UT120N03 is generally applied in DC to DC convertors
or synchronous rectifications.
„
TO-220
FEATURES
* ID = 120A
* VDS=30V
* RDS(ON)=3.8mΩ @ VGS=10V
* Low Gate Charge (Typical 54nC)
* Fast Switching
* 100% Avalanche Tested
* High Power and Current Handling Capability
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
UT120N03L-TA3-T
UT120N03G-TA3-T
TO-220
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
1
G
Pin Assignment
2
D
3
S
Packing
Tube
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„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
VDSS
30
V
VGSS
±20
V
Continuous
ID
120
A
Drain Current
480
A
Pulsed (Note 2)
IDM
Single Pulsed Avalanche Energy (Note 3)
EAS
240
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
6.0
V/ns
Power Dissipation (TC=25°C)
PD
125
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 0.61mH, IAS = 28A, VDD = 27V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 80A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
5. Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 100A.
Drain-Source Voltage
Gate-Source Voltage
„
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
θJA
θJC
RATINGS
62.5
1
UNIT
°C/W
°C/W
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Forward
Gate- Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
SYMBOL
BVDSS
TEST CONDITIONS
ID=250µA, VGS=0V, TC=25°C
30
V
△BVDSS/△TJ Reference to 25°C, ID=250µA
IDSS
IGSS
VGS(TH)
RDS(ON)
UNISONIC TECHNOLOGIES CO., LTD
mV/°C
VDS=30V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
VDS=VGS, ID=250µA
VGS=10V, ID=35A
VGS=4.5V, ID=35A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=5V, VDS=15V, ID=35A
Gate to Source Charge
QGS
(Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=15V, ID=35A, RG=4.7Ω,
V
Turn-OFF Delay Time
tD(OFF)
GS=5V (Note 1, 2)
Fall-Time
tF
Gate Resistance
Rg
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=120A, VGS=0V
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
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MIN TYP MAX UNIT
1
0.02 100
-0.02 -100
1.0
3.0
3.8
6.4
2990
585
340
54
8.0
10
9
96
47
37
2.0
μA
nA
nA
V
mΩ
mΩ
pF
pF
pF
72
nC
nC
nC
ns
ns
ns
ns
Ω
1.25
120
480
V
A
A
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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„
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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