Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT136N03
Preliminary
Power MOSFET
N-CHANNEL
ENHANCEMENT MODE
„
DESCRIPTION
The UT136N03 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation with
low gate voltages. This device is suitable for use as a load
switch or in PWM applications.
„
FEATURES
* VDS(V)= 30 V
* ID=136 A
* RDS(ON)= [email protected]=10 V
* RDS(ON) = [email protected]=4.5 V
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT136N03L-TA3-R
UT136N03G-TA3-T
UT136N03L-TQ2-T
UT136N03G-TQ2-T
UT136N03L-TQ2-R
UT136N03G-TQ2-R
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
Package
TO-220
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
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QW-R502-459.a
UT136N03
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
136
A
Pulsed Drain Current (Note1)
IDM
400
A
Single Pulsed Avalanche Energy (Note4)
EAS
875
mJ
Power Dissipation
PD
100
W
Junction Temperature
TJ
+175
°C
Storage Temperature
TSTG
-55 ~ +175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
„
SYMBOL
θJA
θJC
RATINGS
62.5
1.4
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS (Note2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS =0 V, ID =250 µA
VDS=30 V,VGS =0 V
VDS =0 V, VGS = ±20 V
30
VGS(TH)
VDS =VGS, ID =250 µA
VGS =10 V, ID =40 A
VGS =4.5 V, ID =40 A
1
RDS(ON)
DYNAMIC PARAMETERS (Note3)
Input Capacitance
CISS
VDS =15V, VGS =0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS (Note3)
Total Gate Charge
QG
VDS =15V, VGS =5V, ID =16A
Gate Source Charge
QGS
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=15V, ID =1A, RGEN =6Ω
V
Turn-OFF Delay Time
tD(OFF)
GS =10 V
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=20 A,VGS=0 V
Drain-Source Diode Forward Current
IS
Note : 1. Pulse width limited by maximum junction temperature
2. Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%.
3. Guaranteed by design, not subject to production testing.
4. L = 0.5mH, IAS = 35A, VDD = 25V, RG = 25Ω, Starting TJ = 25°C.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
3.6
MAX
UNIT
1
±100
V
µA
nA
3
4.5
5.6
3800
800
600
60
20.8
22
25.7
10
128
34
V
mΩ
pF
72
nC
50
20
200
70
ns
1.5
90
V
A
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UT136N03
„
Preliminary
Power MOSFET
TEST CIRCUIT AND WAVEFORM
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-459.a
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