Data Sheet

Pressure
Freescale Semiconductor
+
MPX4200A
Rev 4, 1/2009
Integrated Silicon Pressure Sensor
for Manifold Absolute Pressure,
Applications, On-Chip Signal
Conditioned, Temperature
Compensated and Calibrated
The Freescale MPX4200A series Manifold Absolute Pressure (MAP)
sensor for turbo boost engine control is designed to sense absolute air
pressure within the intake manifold. This measurement can be used to
compute the amount of fuel required for each cylinder.
The MPX4200A series sensor integrates on-chip, bipolar op amp circuitry
and thin film resistor networks to provide a high level analog output signal and
temperature compensation. The small form factor and reliability of on-chip
integration make the Freescale MAP sensor a logical and economical choice
for automotive system designers.
MPX4200A
Series
20 to 200 kPa (2.9 to 29 psi)
0.3 to 4.9 V Output
Application Examples
• Manifold Sensing for Automotive
Systems
• Ideally suited for Microprocessor or
Microcontroller-Based Systems
• Also ideal for Non-Automotive
Applications
Features
• Specifically Designed for Intake Manifold Absolute Pressure Sensing in
Engine Control Systems
• Patented Silicon Shear Stress Strain Gauge
• Temperature Compensated Over –40° to +125°C
• Offers Reduction in Weight and Volume Compared to Existing Hybrid
Modules
• Durable Epoxy Unibody Element
ORDERING INFORMATION
Device Name
MPX4200A
Package
Options
Case
No.
None
Tray
867
•
# of Ports
Single
Dual
Gauge
Pressure Type
Differential Absolute
•
UNIBODY PACKAGE
MPX4200A
CASE 867-08
© Freescale Semiconductor, Inc., 2006-2009. All rights reserved.
Device
Marking
MPX4200A
Pressure
Operating Characteristics
Table 1. Operating Characteristics (VS = 5.1 Vdc, TA = 25°C unless otherwise noted, P1 > P2.
Decoupling circuit shown in Figure 3 required to meet electrical specifications.)
Characteristic
Symbol
Min
Typ
Max
Unit
Pressure Range
POP
20
—
200
kPa
Supply Voltage(2)
VS
4.85
5.1
5.35
Vdc
Io
—
7.0
10
mAdc
(1)
Supply Current
(3)
Minimum Pressure Offset @ VS = 5.1 Volts
(0 to 85°C)
Voff
0.199
0.306
0.413
Vdc
Full Scale Output @ VS = 5.1 Volts(4)
(0 to 85°C)
VFSO
4.725
4.896
4.978
Vdc
Full Scale Span @ VS = 5.1 Volts(5)
(0 to 85°C)
VFSS
—
4.590
—
Vdc
(0 to 85°C)
—
—
—
±1.5
%VFSS
V/P
—
25.5
—-
mV/kPa
tR
—
1.0
—-
ms
Io+
—
0.1
—-
mAdc
—
—
20
—-
ms
—
—
±0.5
—-
%VFSS
(6)
Accuracy
Sensitivity
Response
Time(7)
Output Source Current at Full Scale Output
Warm-Up Time
(8)
(9)
Offset Stability
1. 1.0 kPa (kiloPascal) equals 0.145 psi.
2. Device is ratiometric within this specified excitation range.
3. Offset (Voff) is defined as the output voltage at the minimum rated pressure.
4. Full Scale Output (VFSO) is defined as the output voltage at the maximum or full rated pressure.
5. Full Scale Span (VFSS) is defined as the algebraic difference between the output voltage at full rated pressure and the output voltage at the
minimum rated pressure.
6. Accuracy (error budget) consists of the following:
Linearity:
Temperature Hysteresis:
Pressure Hysteresis:
TcSpan:
TcOffset:
Variation from Nominal:
Output deviation from a straight line relationship with pressure over the specified pressure range.
Output deviation at any temperature within the operating temperature range, after the temperature is cycled to
and from the minimum or maximum operating temperature points, with zero differential pressure applied.
Output deviation at any pressure within the specified range, when this pressure is cycled to and from the
minimum or maximum rated pressure, at 25°C.
Output deviation over the temperature range of 0 to 85°C, relative to 25°C.
Output deviation with minimum rated pressure applied, over the temperature range of 0 to 85°C, relative to 25°C.
The variation from nominal values, for Offset or Full Scale Span, as a percent of VFSS, at 25°C.
7. Response Time is defined as the time for the incremental change in the output to go from 10% to 90% of its final value when subjected to
a specified step change in pressure.
8. Warm-up Time is defined as the time required for the product to meet the specified output voltage after the Pressure has been stabilized.
9. Offset Stability is the product's output deviation when subjected to 1000 hours of Pulsed Pressure, Temperature Cycling with Bias Test.
MPX4200A
2
Sensors
Freescale Semiconductor
Pressure
Maximum Ratings
Table 2. Maximum Ratings(1)
Rating
Symbol
Value
Unit
Maximum Pressure (P1 > P2)
PMAX
800
kPa
Storage Temperature
TSTG
–40 to +125
°C
TA
–40 to +125
°C
Operating Temperature
1. Exposure beyond the specified limits may cause permanent damage or degradation to the device.
Table 3. Mechanical Characteristics
Characteristics
Weight, Basic Element (Case 867)
Typ
Unit
4.0
grams
Figure 1 shows a block diagram of the internal circuitry integrated on a pressure sensor chip.
VS
Thin Film
Temperature
Compensation
and
Gain Stage #1
Sensing
Element
GND
3
Gain Stage #2
and
Ground
Reference
Shift Circuitry
Vout
1
Pins 4, 5, and 6 are NO CONNECTS for
unibody devices.
2
Figure 1. Fully Integrated Pressure Sensor Schematic
MPX4200A
Sensors
Freescale Semiconductor
3
Pressure
On-chip Temperature Compensation and Calibration
Figure 2 illustrates the absolute sensing chip in the basic
chip carrier (Case 867). A fluorosilicone gel isolates the die
surface and wire bonds from the environment, while allowing
the pressure signal to be transmitted to the sensor
diaphragm. The MPX4200A series pressure sensor
operating characteristics, and internal reliability and
qualification tests are based on use of dry air as the pressure
media. Media, other than dry air, may have adverse effects on
sensor performance and long-term reliability. Contact the
factory for information regarding media compatibility in your
application.
Silicone
Die Coat
Figure 3 shows the recommended decoupling circuit for
interfacing the output of the integrated sensor to the A/D input
of a microprocessor or microcontroller. Proper decoupling of
the power supply is recommended.
Figure 4 shows the sensor output signal relative to
pressure input. Typical minimum and maximum output
curves are shown for operation over temperature range of
0° to 85°C. The output will saturate outside of the specified
pressure range.
Stainless Steel
Metal Cover
Die
P1
Wire Bond
Epoxy Case
RTV Die Bond
Lead Frame
P2
Sealed Vacuum Reference
Figure 2. Cross Sectional Diagram (not to scale)
+5.1 V
Vout
Output
Vs
IPS
1.0 μF
0.01 μF
GND
470 pF
Figure 3. Recommended Power Supply
Decoupling and Output Filtering
(For additional output filtering, please refer to Application Note AN1646)
5.0
Transfer Function:
Vout = Vs* (0.005 x P-0.04) ± Error
VS = 5.1 Vdc
Temperature = 0 to 85°C
4.5
4.0
Output (Volts)
3.5
TYP
3.0
2.5
2.0
MAX
1.5
MIN
1.0
0.5
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
190
200
210
0
Figure 4. Output versus Absolute Pressure
MPX4200A
4
Sensors
Freescale Semiconductor
Pressure
PACKAGE DIMENSIONS
C
R
POSITIVE PRESSURE
(P1)
M
B
-AN
PIN 1
SEATING
PLANE
1
2
3
4
5
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION -A- IS INCLUSIVE OF THE MOLD
STOP RING. MOLD STOP RING NOT TO EXCEED
16.00 (0.630).
DIM
A
B
C
D
F
G
J
L
M
N
R
S
L
6
-TG
J
S
F
D 6 PL
0.136 (0.005)
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
VOUT
GROUND
VCC
V1
V2
VEX
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
OPEN
GROUND
-VOUT
VSUPPLY
+VOUT
OPEN
M
T A
M
STYLE 3:
PIN 1.
2.
3.
4.
5.
6.
INCHES
MILLIMETERS
MAX
MIN
MAX MIN
16.00
0.595
0.630 15.11
13.56
0.514
0.534 13.06
5.59
0.200
0.220
5.08
0.84
0.027
0.033
0.68
1.63
0.048
0.064
1.22
0.100 BSC
2.54 BSC
0.40
0.014
0.016
0.36
18.42
0.695
0.725 17.65
30˚ NOM
30˚ NOM
12.57
0.475
0.495 12.07
11.43
0.430
0.450 10.92
0.090
0.105
2.29
2.66
OPEN
GROUND
+VOUT
+VSUPPLY
-VOUT
OPEN
CASE 867-08
ISSUE N
UNIBODY PACKAGE
MPX4200A
Sensors
Freescale Semiconductor
5
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MPX4200A
Rev. 4
1/2009
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