UNISONIC TECHNOLOGIES CO., LTD 12NN10 Preliminary Power MOSFET DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 12NN10 is a dual N-Channel enhancement mode power MOSFET, it provides designer with fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness. SOP-8 FEATURES * Low Gate Charge (Typically 10nC) * 2.5A, 100V, 150mΩ @ VGS=10V * Fast Switching Speed * Simple Drive Requirement SYMBOL ORDERING INFORMATION Ordering Number Note: 12NN10G-S08-R Pin Assignment: G: Gate 12NN10G-S08-R Package D: Drain SOP-8 S: Source 1 S1 Pin Assignment 2 3 4 5, 6 7, 8 G1 S2 G2 D2 D1 (1)Packing Type (1) R: Tape Reel (2)Package Type (2) S08: SOP-8 (3)Green Package (3) G: Halogen Free and Lead Free Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-506.c 12NN10 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Continuous(Note 3) ID 2.5 A Drain Current Pulsed(Note 2) IDM 10 A Power Dissipation PD 2 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by Max. junction temperature. 3. Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135°C/W when mounted on Min. copper pad. THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient θJA 62.5 °C/W Note: Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135°C/W when mounted on Min. copper pad. ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 100 Drain-Source Leakage Current IDSS VDS=80V, VGS=0V Forward VDS=0V ,VGS=20V Gate-Source Leakage Current IGSS Reverse VDS=0V ,VGS=-20V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 1 Drain-Source On-State Resistance (Note 1) RDS(ON) VGS=10V, ID=2A Forward Transconductance gFS VDS=10V, ID=2A DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 1) QG VDS=80V, VGS=10V, ID=2A Gate-Source Charge QGS Gate-Drain Charge QGD Turn-ON Delay Time (Note 1) tD(ON) Turn-ON Rise Time tR VDS=50V, ID=2A, RG=3.3Ω VGS=10V Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note 1) VSD IS =1.5A, VGS=0V Body Diode Reverse Recovery Time (Note 1) tRR VGS=0V, IS=2A, dIF/dt=100A/μs Body Diode Reverse Recovery Charge QRR Note: Pulse test. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT 10 100 -100 V µA nA nA 3 0.18 V mΩ S 420 60 40 672 pF pF pF 10 2 4 6.5 7 14 3.5 16 nC nC nC ns ns ns ns 1.3 V ns nC 0.15 2.8 40 75 2 of 3 QW-R502-506.c 12NN10 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-506.c