Datasheet

UNISONIC TECHNOLOGIES CO., LTD
12NN10
Preliminary
Power MOSFET
DUAL N-CHANNEL
ENHANCEMENT MODE POWER
MOSFET

DESCRIPTION
The UTC 12NN10 is a dual N-Channel enhancement mode power
MOSFET, it provides designer with fast switching speed, ruggedized
device design, low on-resistance and cost-effectiveness.

SOP-8
FEATURES
* Low Gate Charge (Typically 10nC)
* 2.5A, 100V, 150mΩ @ VGS=10V
* Fast Switching Speed
* Simple Drive Requirement

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:
12NN10G-S08-R
Pin Assignment: G: Gate
12NN10G-S08-R

Package
D: Drain
SOP-8
S: Source
1
S1
Pin Assignment
2
3
4 5, 6 7, 8
G1 S2 G2 D2 D1
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) S08: SOP-8
(3)Green Package
(3) G: Halogen Free and Lead Free
Packing
Tape Reel
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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12NN10

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
Continuous(Note 3)
ID
2.5
A
Drain Current
Pulsed(Note 2)
IDM
10
A
Power Dissipation
PD
2
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by Max. junction temperature.
3. Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135°C/W when mounted on Min. copper
pad.

THERMAL DATA
PARAMETER
SYMBOL
RATING
UNIT
Junction to Ambient
θJA
62.5
°C/W
Note: Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135°C/W when mounted on Min. copper pad.

ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
100
Drain-Source Leakage Current
IDSS
VDS=80V, VGS=0V
Forward
VDS=0V ,VGS=20V
Gate-Source Leakage Current
IGSS
Reverse
VDS=0V ,VGS=-20V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
1
Drain-Source On-State Resistance (Note 1)
RDS(ON) VGS=10V, ID=2A
Forward Transconductance
gFS
VDS=10V, ID=2A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V,VGS=0V,f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
QG
VDS=80V, VGS=10V, ID=2A
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
Turn-ON Delay Time (Note 1)
tD(ON)
Turn-ON Rise Time
tR
VDS=50V, ID=2A, RG=3.3Ω
VGS=10V
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note 1)
VSD
IS =1.5A, VGS=0V
Body Diode Reverse Recovery Time (Note 1)
tRR
VGS=0V, IS=2A,
dIF/dt=100A/μs
Body Diode Reverse Recovery Charge
QRR
Note: Pulse test.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TYP
MAX UNIT
10
100
-100
V
µA
nA
nA
3
0.18
V
mΩ
S
420
60
40
672
pF
pF
pF
10
2
4
6.5
7
14
3.5
16
nC
nC
nC
ns
ns
ns
ns
1.3
V
ns
nC
0.15
2.8
40
75
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12NN10

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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