Datasheet

UNISONIC TECHNOLOGIES CO., LTD
12P10
Power MOSFET
9.4A, 100V P-CHANNEL
POWER MOSFET

DESCRIPTION
The 12P10 uses advanced proprietary, planar stripe, DMOS
technology to provide excellent RDS(ON), low gate charge and
operation with low gate voltages. This device is suitable to be
used in low voltage applications such as audio amplifier, high
efficiency switching DC/DC converters, and DC motor control.

FEATURES
* RDS(ON) < 0.29Ω @ VGS=-10V, ID=-4.7A
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified

SYMBOL
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12P10

Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
12P10G-AA3-R
12P10L-TA3-T
12P10G-TA3-T
12P10L-TM3-T
12P10G-TM3-T
12P10L-TMS-T
12P10G-TMS-T
12P10L-TMS2-T
12P10G-TMS2-T
12P10L-TMS4-T
12P10G-TMS4-T
12P10L-TN3-R
12P10G-TN3-R
12P10L-TND-R
12P10G-TND-R
12P10L-TQ2-R
12P10G-TQ2-R
12P10L-TQ2-T
12P10G-TQ2-T
12P10G-S08-R
Note: Pin Assignment: G: Gate
D: Drain

Package
SOT-223
TO-220
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
TO-263
TO-263
SOP-8
S: Source
1
G
G
G
G
G
G
G
G
G
G
S
2
D
D
D
D
D
D
D
D
D
D
S
Pin Assignment
3 4 5 6 7
S S S S S S S S S S S G D D D
8
D
Packing
Tape Reel
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
Tape Reel
Tube
Tape Reel
MARKING
PACKAGE
MARKING
SOT-223
TO-251S4
TO-252
TO-252D
TO-263
TO-220
TO-251
TO-251S
TO-251S2
SOP-8
UNISONIC TECHNOLOGIES CO., LTD
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12P10

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-100
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
-9.4
A
Pulsed Drain Current (Note 2)
IDM
-37.6
A
Avalanche Current (Note 2)
IAR
-9.4
A
Single Pulsed Avalanche Energy (Note 3)
EAS
280
mJ
Repetitive Avalanche Energy (Note 2)
EAR
5.0
mJ
TO-220/TO-263
73
W
TO-251/TO-251S
TO-251S2/TO-251S4
50
W
Power Dissipation
PD
TO-252/TO-252D
SOT-223
8
W
SOP-8
5
W
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. L=6.3mH, IAS=-9.4A, VDD=-25V, RG=25Ω, Starting TJ=25°C
4. ISD≤-11.5A, di/dt≤300μA/ s, VDD≤BVDSS, Starting TJ=25°C

THERMAL DATA
PARAMETER
TO-220/TO-263
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
Junction to Ambient
TO-263
SOT-223
SOP-8
TO-220/TO-263
TO-251/TO-251S
TO-251S2/TO-251S4
Junction to Case
TO-252/TO-252D
SOT-223
SOP-8
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
RATINGS
62.5
UNIT
°С/W
110
°С/W
62.5
125
150
1.9
°С/W
°С/W
°С/W
°С/W
2.5
°С/W
14
25
°С/W
°С/W
θJA
θJC
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12P10

Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
BVDSS
TEST CONDITIONS
VGS=0 V, ID=-250µA
VDS=-100V, VGS=0V
VDS=-100V, TC=125°C
VDS=0V, VGS=±30V
-100
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=-250µA
VGS=-10V, ID=-4.7A
VDS =-40V, ID=-4.7A (Note 1)
-2.0
CISS
COSS
CRSS
VDS=-25V, VGS=0V, f=1.0MHz
Drain-Source Leakage Current
IDSS
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
IGSS
QG
VDS=-50V, ID=-1.3A,
Gate Source Charge
QGS
VGS=-10V(Note 1, 2)
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=-30V, ID=-0.5A,
RG=25Ω (Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
VGS=0V, IS=-9.4A
Maximum Body-Diode Continuous Current
IS
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
Note: 2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
-1
-10
±100
V
µA
µA
nA
-4.0
0.24 0.29
6.3
V
Ω
S
570
115
30
800
290
85
pF
pF
pF
21
4.6
4
40
64
255
70
27
nC
50
100
275
90
nC
nC
ns
ns
ns
ns
-4.0
-9.4
V
A
-37.6
A
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12P10

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
IRM
di/dt
Body Diode Reverse Current
VDS
(D.U.T.)
VDD
Body Diode Recovery dv/dt
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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12P10

Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
VDS
tp
VDD
RG
-10V
D.U.T.
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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ID(t)
VDD
Time
VDS(t)
IAS
BVDSS
Unclamped Inductive Switching Waveforms
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12P10

Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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