Datasheet

UNISONIC TECHNOLOGIES CO., LTD
15N06
Power MOSFET
15A, 60V N-CHANNEL
POWER MOSFET
1

The UTC 15N06 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.

TO-220
DESCRIPTION
1
TO-220F
FEATURES
* RDS(ON)<100mΩ @ VGS=5V, ID=7.5A
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
15N06L-TA3-T
15N06G-TA3-T
15N06L-TF3-T
15N06G-TF3-T
15N06L-TN3-R
15N06G-TN3-R
15N06G-S08-R
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1
TO-252
SOP-8
Package
TO-220
TO-220F
TO-252
SOP-8
1
G
G
G
S
2
D
D
D
S
Pin Assignment
3 4 5 6
S - - S - - S - - S G D D
7
D
Packing
8
Tube
Tube
- Tape Reel
D Tape Reel
1 of 7
QW-R502-260.F
15N06

Power MOSFET
MARKING
TO-220 / TO-220F / TO-252
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SOP-8
2 of 7
QW-R502-260.F
15N06

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage (RG=20kΩ)
VDGR
60
V
Gate-Source Voltage
VGSS
±15
V
Continuous Drain Current (TC=25°C)
ID
15
A
Pulsed Drain Current (Note 2)
IDM
60
A
Avalanche Current (Note 3)
IAR
15
A
Single Pulsed (Note 4)
EAS
50
mJ
Avalanche Energy
Repetitive (Note 3)
EAR
12
mJ
2.2
TO-220
TO-220F
2.0
Power Dissipation
W
PD
(TA=25°C)
TO-252
1.5
SOP-8
2.0
Junction Temperature
TJ
+175
°C
Storage Temperature
TSTG
-65 ~ +175
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area.
3. Pulse width limited by TJ(MAX),δ<1%
4. Starting TJ=25°C, ID=IAR, VDD=25V

THERMAL DATA
PARAMETER
TO-220/SOP-8
Junction to Ambient
TO-220F
TO-252
TO-220
Junction to Case
TO-220F
TO-252
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
58
62.5
100
4.38
5
3
UNIT
°C/W
°C/W
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QW-R502-260.F
15N06

Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
Drain-Source Leakage Current
IDSS
VDS=Max Rating
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±15V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250 µA
On State Drain Current
ID(ON)
VDS>ID(ON)×RDS(ON)MAX, VGS=10V
Static Drain-Source On-Resistance
RDS(ON)
VGS=5V, ID=7.5A
Forward Transconductance (Note 1)
gFS
VDS>ID(ON)×RDS(ON)MAX, ID=7.5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VGS=5V, VDD=30V, RG=4.7Ω,
ID=7.5A
Turn-ON Rise Time
tR
Turn-OFF Delay Time
tD(OFF)
VGS=10V, VDD=48V, RG=47Ω
ID=15A
Turn-OFF Fall-Time
tF
Total Gate Charge
QG
VDD=40V, VGS=5V, ID=15A
Gate Source Charge
QGS
Gate Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
ISD=15 A,VGS=0V(Note 1)
Source-Drain Current
ISD
Source-Drain Current (Pulse)
ISDM
(Note 2)
Notes: 1. Pulse width=300μs, duty cycle=1.5%
2. Pulse width limited by safe operating area.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
60
250
±100
1
15
3
1.7
2.5
75
5
100
700
230
80
950
310
110
15
160
52
100
18
8
9
60
200
80
140
30
V
µA
nA
V
A
mΩ
S
pF
pF
pF
ns
ns
nC
1.5
15
60
V
A
A
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QW-R502-260.F
15N06

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 7
QW-R502-260.F
15N06

Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
D.U.T.
10V
VGS
10%
tD(ON)
Pulse Width≤ 1μs
tD(OFF)
tF
tR
Duty Factor≤0.1%
Switching Test Circuit
Switching Waveforms
QG
10V
QGS
QGD
VGS
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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QW-R502-260.F
15N06

Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 7
QW-R502-260.F
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