UNISONIC TECHNOLOGIES CO., LTD 15N06 Power MOSFET 15A, 60V N-CHANNEL POWER MOSFET 1 The UTC 15N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. TO-220 DESCRIPTION 1 TO-220F FEATURES * RDS(ON)<100mΩ @ VGS=5V, ID=7.5A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 15N06L-TA3-T 15N06G-TA3-T 15N06L-TF3-T 15N06G-TF3-T 15N06L-TN3-R 15N06G-TN3-R 15N06G-S08-R www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 TO-252 SOP-8 Package TO-220 TO-220F TO-252 SOP-8 1 G G G S 2 D D D S Pin Assignment 3 4 5 6 S - - S - - S - - S G D D 7 D Packing 8 Tube Tube - Tape Reel D Tape Reel 1 of 7 QW-R502-260.F 15N06 Power MOSFET MARKING TO-220 / TO-220F / TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SOP-8 2 of 7 QW-R502-260.F 15N06 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RG=20kΩ) VDGR 60 V Gate-Source Voltage VGSS ±15 V Continuous Drain Current (TC=25°C) ID 15 A Pulsed Drain Current (Note 2) IDM 60 A Avalanche Current (Note 3) IAR 15 A Single Pulsed (Note 4) EAS 50 mJ Avalanche Energy Repetitive (Note 3) EAR 12 mJ 2.2 TO-220 TO-220F 2.0 Power Dissipation W PD (TA=25°C) TO-252 1.5 SOP-8 2.0 Junction Temperature TJ +175 °C Storage Temperature TSTG -65 ~ +175 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by safe operating area. 3. Pulse width limited by TJ(MAX),δ<1% 4. Starting TJ=25°C, ID=IAR, VDD=25V THERMAL DATA PARAMETER TO-220/SOP-8 Junction to Ambient TO-220F TO-252 TO-220 Junction to Case TO-220F TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 58 62.5 100 4.38 5 3 UNIT °C/W °C/W 3 of 7 QW-R502-260.F 15N06 Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA Drain-Source Leakage Current IDSS VDS=Max Rating Gate-Source Leakage Current IGSS VDS=0V, VGS=±15V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250 µA On State Drain Current ID(ON) VDS>ID(ON)×RDS(ON)MAX, VGS=10V Static Drain-Source On-Resistance RDS(ON) VGS=5V, ID=7.5A Forward Transconductance (Note 1) gFS VDS>ID(ON)×RDS(ON)MAX, ID=7.5A DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) VGS=5V, VDD=30V, RG=4.7Ω, ID=7.5A Turn-ON Rise Time tR Turn-OFF Delay Time tD(OFF) VGS=10V, VDD=48V, RG=47Ω ID=15A Turn-OFF Fall-Time tF Total Gate Charge QG VDD=40V, VGS=5V, ID=15A Gate Source Charge QGS Gate Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD ISD=15 A,VGS=0V(Note 1) Source-Drain Current ISD Source-Drain Current (Pulse) ISDM (Note 2) Notes: 1. Pulse width=300μs, duty cycle=1.5% 2. Pulse width limited by safe operating area. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 60 250 ±100 1 15 3 1.7 2.5 75 5 100 700 230 80 950 310 110 15 160 52 100 18 8 9 60 200 80 140 30 V µA nA V A mΩ S pF pF pF ns ns nC 1.5 15 60 V A A 4 of 7 QW-R502-260.F 15N06 Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-260.F 15N06 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VDD VGS RG D.U.T. 10V VGS 10% tD(ON) Pulse Width≤ 1μs tD(OFF) tF tR Duty Factor≤0.1% Switching Test Circuit Switching Waveforms QG 10V QGS QGD VGS Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R502-260.F 15N06 Power MOSFET TYPICAL CHARACTERISTICS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-260.F