UNISONIC TECHNOLOGIES CO., LTD 25N10 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC’s perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness. It is generally suitable for all commercial-industrial applications and DC/DC converters requiring low voltage. FEATURES * Single Drive Requirement * Low Gate Charge * RoHS Compliant SYMBOL ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free 25N10L-TF1-T 25N10G-TF1-T 25N10L-TF2-T 25N10G-TF2-T 25N10L-TF3-T 25N10G-TF3-T 25N10L-TM3-T 25N10G-TM3-T 25N10L-TN3-R 25N10G-TN3-R www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd Package TO-220F1 TO-220F2 TO-220F TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel 1 of 4 QW-R502-448.C 25N10 Power MOSFET MARKING INFORMATION PACKAGE MARKING TO-220F1 TO-220F2 TO-220 TO-251 TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R502-448.C 25N10 Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain Source Voltage VDSS 100 V Gate Source Voltage VGSS ±20 V ID 23 A TC =25°C Continuous Drain Current (VGS=10V) TC = 100°C ID 14.6 A Pulsed Drain Current (Note 2) IDM 80 A TO-220F/TO-220F1 50 Total Power Dissipation PD TO-220F2 52 W (TC =25°C) TO-251/TO-252 41 Operating Junction Temperature TJ -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by max. junction temperature THERMAL DATA PARAMETER TO-220F/TO-220F1 TO-220F2 Junction to Ambient TO-251/TO-252 TO-220F/TO-220F1 Junction to Case TO-220F2 TO-251/TO-252 SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS 62.5 100 2.5 2.4 3 UNIT °C/W °C/W 3 of 5 QW-R502-448.C 25N10 Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current SYMBOL BVDSS TEST CONDITIONS VGS =0V, ID =1mA IDSS UNISONIC TECHNOLOGIES CO., LTD TYP MAX UNIT 100 ∆BVDSS/∆TJ Reference to 25°C , ID =1mA V 0.14 VDS =100V, VGS =0V, TJ=25°C VDS =80V, VGS =0V,TJ =150°C VGS =±20V Gate-Source Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS =VGS, ID =250µA Static Drain-Source On-Resistance (Note) RDS(ON) VGS =10V, ID =16A Forward Transconductance gFS VDS =10V, ID =16A DYNAMIC PARAMETERS Input Capacitance CISS VDS =25V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS Gate Resistance RG f=1.0MHz SWITCHING PARAMETERS Total Gate Charge (Note) QG VGS=10V, VDS=80V, ID=16A Gate Source Charge QGS Gate Drain Charge QGD Turn-ON Delay Time1 tD(ON) Turn-ON Rise Time tR VDD=50V, ID=16A, RG=3.3Ω, VGS=10V, RD=3.125Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note) VSD IS =16A, VGS =0V Reverse Recovery Time tRR IS =16A,VGS =0V, dI/dt=100A/µs Reverse Recovery Charge QRR Note: Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%. www.unisonic.com.tw MIN 2 V/°C 25 100 ±100 µA µA nA 4 80 V mΩ S 14 1060 1700 270 8 1.5 2.3 19 5 6 10 28 17 2 90 380 pF pF pF Ω 30 nC nC nC ns ns ns ns 1.3 V ns nC 4 of 5 QW-R502-448.C 25N10 TYPICAL CHARACTERISTICS Drain Current, ID (A) Drain Current, ID (A) Drain Current, ID (µA) Drain Current, ID (µA) Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-448.C