Datasheet

UNISONIC TECHNOLOGIES CO., LTD
25N10
Power MOSFET
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET

DESCRIPTION
The UTC 25N10 is an N-channel enhancement mode power
MOSFET and it uses UTC’s perfect technology to provide designers
with fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
It is generally suitable for all commercial-industrial applications
and DC/DC converters requiring low voltage.

FEATURES
* Single Drive Requirement
* Low Gate Charge
* RoHS Compliant

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free Plating
Halogen Free
25N10L-TF1-T
25N10G-TF1-T
25N10L-TF2-T
25N10G-TF2-T
25N10L-TF3-T
25N10G-TF3-T
25N10L-TM3-T
25N10G-TM3-T
25N10L-TN3-R
25N10G-TN3-R
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Copyright © 2014 Unisonic Technologies Co., Ltd
Package
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tape Reel
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QW-R502-448.C
25N10

Power MOSFET
MARKING INFORMATION
PACKAGE
MARKING
TO-220F1
TO-220F2
TO-220
TO-251
TO-252
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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25N10

Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain Source Voltage
VDSS
100
V
Gate Source Voltage
VGSS
±20
V
ID
23
A
TC =25°C
Continuous Drain Current
(VGS=10V)
TC = 100°C
ID
14.6
A
Pulsed Drain Current (Note 2)
IDM
80
A
TO-220F/TO-220F1
50
Total Power Dissipation
PD
TO-220F2
52
W
(TC =25°C)
TO-251/TO-252
41
Operating Junction Temperature
TJ
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by max. junction temperature

THERMAL DATA
PARAMETER
TO-220F/TO-220F1
TO-220F2
Junction to Ambient
TO-251/TO-252
TO-220F/TO-220F1
Junction to Case
TO-220F2
TO-251/TO-252
SYMBOL
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJA
θJC
RATINGS
62.5
100
2.5
2.4
3
UNIT
°C/W
°C/W
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25N10

Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
SYMBOL
BVDSS
TEST CONDITIONS
VGS =0V, ID =1mA
IDSS
UNISONIC TECHNOLOGIES CO., LTD
TYP MAX UNIT
100
∆BVDSS/∆TJ Reference to 25°C , ID =1mA
V
0.14
VDS =100V, VGS =0V, TJ=25°C
VDS =80V, VGS =0V,TJ =150°C
VGS =±20V
Gate-Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =250µA
Static Drain-Source On-Resistance (Note)
RDS(ON)
VGS =10V, ID =16A
Forward Transconductance
gFS
VDS =10V, ID =16A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =25V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge (Note)
QG
VGS=10V, VDS=80V, ID=16A
Gate Source Charge
QGS
Gate Drain Charge
QGD
Turn-ON Delay Time1
tD(ON)
Turn-ON Rise Time
tR
VDD=50V, ID=16A, RG=3.3Ω,
VGS=10V, RD=3.125Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note)
VSD
IS =16A, VGS =0V
Reverse Recovery Time
tRR
IS =16A,VGS =0V,
dI/dt=100A/µs
Reverse Recovery Charge
QRR
Note: Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
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MIN
2
V/°C
25
100
±100
µA
µA
nA
4
80
V
mΩ
S
14
1060 1700
270
8
1.5
2.3
19
5
6
10
28
17
2
90
380
pF
pF
pF
Ω
30
nC
nC
nC
ns
ns
ns
ns
1.3
V
ns
nC
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25N10
TYPICAL CHARACTERISTICS
Drain Current, ID (A)
Drain Current, ID (A)
Drain Current, ID (µA)
Drain Current, ID (µA)

Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-448.C
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