Datasheet

UNISONIC TECHNOLOGIES CO., LTD
60N06
Power MOSFET
60A, 60V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC 60N06 is N-channel enhancement mode power
field effect transistors with stable off-state characteristics, fast
switching speed, low thermal resistance, usually used at telecom
and computer application.
„
FEATURES
* RDS(ON) = 18mΩ @VGS = 10 V
* Ultra low gate charge ( typical 39nC )
* Fast switching capability
* Low reverse transfer Capacitance (CRSS= typical 115pF )
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
60N06L-TA3-T
60N06G-TA3-T
TO-220
60N06L-TF3-T
60N06G-TF3-T
TO-220F
60N06L-TQ2-R
60N06G-TQ2-R
TO-263
60N06L-TQ2-T
60N06G-TQ2-T
TO-263
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd.
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
Tube
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QW-R502-121.C
60N06
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGS
±20
V
TC = 25°C
60
A
Continuous Drain Current
ID
TC = 100°C
39
A
Drain Current Pulsed (Note 2)
IDM
120
A
1000
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
180
mJ
TO-220
100
Power Dissipation
PD
TO-220F
70.62
W
(TC=25°C)
TO-263
54
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repeativity rating: pulse width limited by junction temperature
3. L=0.61mH, IAS=60A, RG=20Ω, Starting TJ=25℃
„
THERMAL DATA
PARAMETER
TO-220/TO-220F
Junction to Ambient
TO-263
TO-220
Junction to Case
TO-220F
TO-263
„
SYMBOL
θJA
θJC
RATINGS
62.5
110
1.25
1.77
2.31
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge (Miller Charge)
SYMBOL
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
CISS
COSS
CRSS
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
MIN
VGS = 0 V, ID = 250μA
VDS = 60 V, VGS = 0 V
VGS = 20V, VDS = 0 V
VGS = -20V, VDS = 0 V
60
VDS = VGS, ID = 250μA
VGS = 10 V, ID = 30A
2.0
VGS = 0V, VDS =25V, f = 1MHz
VDD=30V, ID=60A, RL=0.5Ω,
VGS=10V (Note 2, 3)
VDS = 30V, VGS = 10 V
ID = 60A (Note 2, 3)
TYP
14
MAX UNIT
1
100
-100
V
μA
nA
nA
4.0
18
V
mΩ
2000
400
115
12
11
25
15
39
12
10
pF
pF
pF
30
30
50
30
60
ns
ns
ns
ns
nC
nC
nC
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QW-R502-121.C
60N06
„
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
VGS = 0 V, IS = 60A
Continuous Source Current
IS
Pulsed Source Current
ISM
Reverse Recovery Time
trr
IS=60A, VGS=0V, dIF/dt=100A/μs
Reverse Recovery Charge
QRR
Note: 1. ISD≤60A, di/dt≤300A/μs, VDD≤BVDSS, Starting TJ=25℃
2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
3. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TYP
MAX UNIT
1.6
60
120
60
3.4
V
A
ns
μC
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60N06
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
VGS
VGS
(Driver)
P.W.
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Period
D=
VDD
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-121.C
60N06
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Gate Charge Test Circuit
Unclamped Inductive Switching Test Circuit
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Switching Waveforms
Gate Charge Waveform
Unclamped Inductive Switching Waveforms
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60N06
Drain Current, ID (A)
TYPICAL CHARACTERISTICS
Drain Current, ID (A)
„
Power MOSFET
Transconductance
On-Resistance vs. Drain Current
0.020
Tc = -55℃
60
On-Resistance, RDS(ON) (Ω)
Transconductance, gfs (S)
70
25℃
50
125℃
40
30
20
10
0
0
40
20
10
30
Gate-to-Source Voltage, VGS (V)
0.016
VGS = 10V
0.012
0.008
0.004
0
50
0
20
40
60
80
Drain Current, ID (A)
Capacitance
Gate Charge
3000
Capacitance, C (pF)
Gate-to-Source Voltage, VGS (V)
10
2500
Ciss
2000
1500
1000
Coss
500
0
100
Crss
0
20
10
30
Drain-to-Source Voltage, VDS (V)
40
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
VGS = 10V
ID = 60A
8
6
4
2
0
0
20
10
30
Total Gate Charge, QG (nC)
40
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TYPICAL CHARACTERISTICS(Cont.)
Drain Current, ID (A)
Drain Current, ID (A)
Source Current, IS (A)
On-Resistance, RDS(ON) (Ω)
(Normalized)
„
Power MOSFET
Normalized Thermal Transient Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.
01 -5
10
0.05
0.02
10-4
10-3
10-2
10-1
1
3
Square Wave Pulse Duration (sec)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-121.C
60N06
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-121.C
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