UNISONIC TECHNOLOGIES CO., LTD UTM4953 Power MOSFET DUAL P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTM4953 uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. SOP-8 FEATURES * RDS(ON)<60mΩ @VGS=-10V * RDS(ON)<95mΩ @VGS=-4.5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL (5) (6) D2 (7) (8) D1 (4) G2 (2) G1 S1 (1) S2 (3) ORDERING INFORMATION Ordering Number Lead Free UTM4953L-S08-R Halogen Free UTM4953G-S08-R www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package Packing SOP-8 Tape Reel 1 of 6 QW-R502-293.B UTM4953 Power MOSFET PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R502-293.B UTM4953 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25℃, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL RATINGS UNIT VDSS -30 V VGSS ±25 V -4.9 Continuous ID A Drain Current Pulsed IDM -30 Power Dissipation PD 2.5 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient SYMBOL θJA RATINGS 50 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS=0V, ID=-250µA VDS=-24V, VGS=0V VDS=0V, VGS=±25V -30 VGS(TH) VDS=VGS, ID=-250µA VGS=-10V, ID=-4.9A VGS=-4.5V, ID=-3.6A -1 RDS(ON) DYNAMIC PARAMETERS Input Capacitance CISS VDS=-25V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note) Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VGEN=-10V, VDD=-15V, RL=7.5Ω, RG=6Ω, ID=-2A Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge QG VDS=-15V, VGS=-10V, ID=-4.6A Gate Source Charge QGS Gate Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD ISD=-1.7A, VGS=0V Note: Pulse width≦300µs, Duty cycle≦2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP -1.5 53 80 MAX UNIT -1 ±100 V µA nA -2 60 95 1260 340 220 V mΩ pF pF pF 10 15 22 15 22.3 4.65 2 18 20 38 25 29 ns ns ns ns nC nC nC -0.7 -1.3 V 3 of 4 QW-R502-293.B UTM4953 Power MOSFET TYPICAL CHARACTERISTICS Drain-Source On Resistance 60 On-Resistance,RDS(ON)(mΩ) ID=4.9A 50 40 30 20 10 0 0 2 4 6 8 10 Gate-Source Voltage,VGS(V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-293.B