Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UTM4953
Power MOSFET
DUAL P-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
„
The UTM4953 uses advanced UTC technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
SOP-8
FEATURES
„
* RDS(ON)<60mΩ @VGS=-10V
* RDS(ON)<95mΩ @VGS=-4.5V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
„
(5) (6)
D2
(7) (8)
D1
(4)
G2
(2)
G1
S1
(1)
„
S2
(3)
ORDERING INFORMATION
Ordering Number
Lead Free
UTM4953L-S08-R
Halogen Free
UTM4953G-S08-R
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
Package
Packing
SOP-8
Tape Reel
1 of 6
QW-R502-293.B
UTM4953
„
Power MOSFET
PIN CONFIGURATION
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www.unisonic.com.tw
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QW-R502-293.B
UTM4953
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25℃, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
RATINGS
UNIT
VDSS
-30
V
VGSS
±25
V
-4.9
Continuous
ID
A
Drain Current
Pulsed
IDM
-30
Power Dissipation
PD
2.5
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
Junction to Ambient
„
SYMBOL
θJA
RATINGS
50
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V, ID=-250µA
VDS=-24V, VGS=0V
VDS=0V, VGS=±25V
-30
VGS(TH)
VDS=VGS, ID=-250µA
VGS=-10V, ID=-4.9A
VGS=-4.5V, ID=-3.6A
-1
RDS(ON)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=-25V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS (Note)
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VGEN=-10V, VDD=-15V, RL=7.5Ω,
RG=6Ω, ID=-2A
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
Total Gate Charge
QG
VDS=-15V, VGS=-10V, ID=-4.6A
Gate Source Charge
QGS
Gate Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
ISD=-1.7A, VGS=0V
Note: Pulse width≦300µs, Duty cycle≦2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
-1.5
53
80
MAX
UNIT
-1
±100
V
µA
nA
-2
60
95
1260
340
220
V
mΩ
pF
pF
pF
10
15
22
15
22.3
4.65
2
18
20
38
25
29
ns
ns
ns
ns
nC
nC
nC
-0.7
-1.3
V
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UTM4953
„
Power MOSFET
TYPICAL CHARACTERISTICS
Drain-Source On Resistance
60
On-Resistance,RDS(ON)(mΩ)
ID=4.9A
50
40
30
20
10
0
0
2
4
6
8
10
Gate-Source Voltage,VGS(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-293.B
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