Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT3458
Power MOSFET
4.1A, 60V N-CHANNEL
POWER MOSFET

DESCRIPTION
6
5
The UTC UT3458 is N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide the
customers with perfect RDS(ON) and low gate charge. This device can
be operated with 4.5V low gate voltage.

4
1
2
3
SOT-26
FEATURES
* VDS=60V
* ID =4.1A
* RDS(ON)<0.1Ω @ VGS=10V, ID=3.2A
RDS(ON)<0.128Ω @ VGS=4.5V, ID=2.8A

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UT3458G-AG6-R
Pin Assignment: G: Gate D: Drain
Package
SOT-26
1
D
Pin Assignment
2
3
4
5
D G S D
6
D
Packing
Tape Reel
S: Source
MARKING
6 5
4
34EUG
1
2
3
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R502-578.D
UT3458

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
4.1
A
TA=25°C
Continuous
ID
(Note 2, 3)
Drain Current
TA=70°C
3.2
A
Pulsed
IDM
15
A
Power Dissipation (Note 2, 3)
PD
2
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied..
2. Surface Mounted on FR4 Board.
3. t ≤ 5 sec

THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient (Note 2)
SYMBOL
θJA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
RATINGS
62.5
UNIT
°C/W
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QW-R502-578.D
UT3458

Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
Static Drain-Source On-State Resistance
RDS(ON)
On State Drain Current
SWITCHING PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
ID(ON)
CISS
COSS
CRSS
QG
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=60V, VGS=0V
VDS=60V, VGS=0V, TJ=70°C
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
60
VDS=VGS, ID=250µA
VGS=10V, ID=3.2A
VGS=4.5V, ID=2.8A
VGS=10V, VDS=5V
1.5
VDS =30 V, VGS = 0V, f = 1MHz
VDS=10V, VDS=48V, ID=3.2A
VDS=4.5V, VDS=48V, ID=3.2A
Gate to Source Charge
QGS
VDS=4.5V, VDS=48V, ID=3.2A
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=30V, ID≈2.5A, RL=12Ω,
VGEN=4.5V, RG=1Ω(Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall Time
tF
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=30V, ID≈2.5A, RL=12Ω,
VGEN=10V, RG=2.5Ω(Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=2.5A, VGS=0V
Body Diode Reverse Recovery Time
tRR
IF=2.5A, di/dt=100A/µs (Note 1)
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Guaranteed by design, not subject to production testing
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
1
10
+100
-100
3
0.082 0.1
0.105 0.128
10
350
40
20
7.1
3.5
1.1
0.95
16
17
12
10
5
12
18
10
0.8
25
V
µA
µA
nA
nA
V
Ω
Ω
A
PF
11
5.5
nC
25
30
20
15
10
20
30
15
ns
2.9
10
1.2
50
A
A
V
ns
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QW-R502-578.D
UT3458

Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
350
300
Drain Current vs. Gate Threshold Voltage
300
250
250
200
200
150
150
100
100
50
50
0
40
0
20
60
80
100
Drain-Source Breakdown Voltage, BVDSS (V)
Drain-Source On-State Resistance
Characteristics
3.5
0
0
0.5
1
1.5
2
2.5
Gate Threshold Voltage, VTH (V)
Drain Current vs. Source to Drain Voltage
3
VGS=10V, ID=3.2A
3
2.4
2.5
1.8
2
1.5
1.2
1
VGS=4.5V, ID=2.8A
0.5
0
0
0.05 0.1 0.15 0.2 0.25 0.3 0.35
Drain to Source Voltage, VDS (V)
0.6
0
0
0.2
0.4 0.6
0.8 1.0 1.2
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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