Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT4810D
Power MOSFET
N-CHANNEL 30-V (D-S)
MOSFET WITH SCHOTTKY
DIODE

DESCRIPTION
SOP-8
As trench FET Power MOSFETS, N-channel MOSFET with
schottky diode, the UTC UT4810D shows fast switching and low
gate charge features. And it can be used in such applications:
DC-DC logic level, low voltage and battery powered.

FEATURES
* RDS(ON) < 13.5mΩ @ VGS=10V, ID=10A
* RDS(ON) < 20mΩ @ VGS=4.5V, ID=5A
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Note:

UT4810DG-S08-R
Pin Assignment: G: Gate
Package
D: Drain
SOP-8
S: Source
1
S
2
S
Pin Assignment
3 4 5 6
S G D D
7
D
8
D
Packing
Tape Reel
MARKING
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UT4810D

Power MOSFET
PIN CONFIGURATION
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UT4810D

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
30
Drain-Source Voltage
VDSS
V
30
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (TJ=150°C)
ID
7.5
A
Pulsed Drain Current
IDM
50
A
Continuous Source Current
IS
1.25
A
Average Forward Current
IF
2.4
A
Pulsed Forward Current
IFM
40
A
Avalanche Current
IAS
25
A
L=0.1mH
Single-Pulse Avalanche Energy
EAS
78
mJ
MOSFET
1.38
Power Dissipation
PD
W
Schottky
1.31
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
MOSFET
Schottky
MOSFET
MOSFET
MOSFET
MOSFET
Schottky
Schottky

THERMAL DATA
PARAMETER
Junction-to-Ambient

SYMBOL
MOSFET
Schottky
MIN
θJA
TYP
73
77
MAX
90
95
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(MOSFET+ Schottky)
Gate-Body Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
Static Drain-Source On-Resistance
SYMBOL
TEST CONDITIONS
IDSS
VDS=30V, VGS=0V
IGSS
VDS=0V, VGS=±20V
VGS(TH)
ID(ON)
VDS=VGS, ID=250µA
VDS≥5V, VGS=10V
VGS=10V, ID=10A
VGS=4.5V, ID=5A
RDS(ON)
DYNAMIC PARAMETERS
Gate Resistance
RG
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=15V, RL=15Ω, RG=6 Ω,
ID≈1 A, VGEN=10V
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
Total Gate Charge
QG
Gate Source Charge
QGS
VDS=15V, VGS=5V, ID=10A
Gate Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=3.0 A, VGS =0 V
Body Diode Reverse Recovery Time
tRR
IF=3.0 A, dI/dt=100A/μs
UNISONIC TECHNOLOGIES CO., LTD
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MIN
TYP
UNIT
0.007 0.100
mA
±100
nA
3
V
A
1
20
0.2
MAX
10.5
16
13.5
20
mΩ
0.55
0.9
Ω
17
13
45
15
14.5
6.3
4.7
30
20
90
25
22
ns
ns
ns
ns
nC
nC
nC
0.485
36
0.53
70
V
ns
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UT4810D
Power MOSFET
TYPICAL CHARACTERISTICS

Drain Current vs. Source to Drain Voltage
Switching Time Waveforms
3000
2500
VDS
2000
90%
1500
1000
VGS
10%
tD(ON)
500
tD(OFF)
tTHL
tTLH
0
200
400
600
800
Source to Drain Voltage,VSD (mV)
Drain Current,ID (µA)
Drain Current,ID (µA)
0
Drain-Source On-State Resistance Characteristics
16
14
VGS=4.5V
12
VGS=10V
10
8
6
4
2
0
0
50
100
150
200
Drain to Source Voltage, VDS (mV)
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UT4810D
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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