Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT4812Z
Power MOSFET
30V, 6.9A DUAL N-CHANNEL
ENHANCEMENT MODE
DESCRIPTION

SOP-8
The UTC UT4812Z can provide excellent RDS(ON) and low
gate charge by using advanced trench technology. The UTC
UT4812Z is suitable for using as a load switch or in PWM
applications.
FEATURES

TSSOP-8
* Low RDS(ON)
* Reliable and Rugged
SYMBOL

(2)
G1
(4)
G1
(4)
G2
(5)
G2
(3)
S2
(1)
S1
(6) (7)
S2
(2) (3)
S1
TSSOP-8
SOP-8

(8)
D2
(1)
D1
(5) (6)
D2
(7) (8)
D1
ORDERING INFORMATION
Note:
Ordering Number
Package
UT4812ZG-S08-R
UT4812ZG-P08-R
Pin Assignment: G: Gate
SOP-8
TSSOP-8
S: Source
D: Drain
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
1
S
D
2
G
S
Pin Assignment
3 4 5 6
S G D D
S G G S
7
D
S
8
D
D
Packing
Tape Reel
Tape Reel
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QW-R502-350.D
UT4812Z

Power MOSFET
MARKING
SOP-8

TSSOP-8
PIN CONFIGURATION
Source 1
1
8
Drain 1
Drain 1
1
8
Drain 2
Gate 1
2
7
Drain 1
Source 1
2
7
Source 2
Source 2
3
6
Drain 2
Source 1
3
6
Source 2
Gate 2
4
5
Drain 2
Gate 1
4
5
Gate 2
SOP-8
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TSSOP-8
2 of 4
QW-R502-350.D
UT4812Z

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 2)
ID
6.9
A
Pulsed Drain Current (Note 3)
IDM
30
A
SOP-8
2
W
Power Dissipation
PD
TSSOP-8
1.5
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ + 150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface Mounted on 1in 2 pad area, t ≤10sec.
3. Repetitive Rating: Pulse width limited by maximum junction temperature.

THERMAL DATA
PARAMETER
Junction to Ambient

SYMBOL
θJA
RATINGS
110
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note)
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0 V, ID=250µA
VDS=30V, VGS=0 V
VDS=0 V, VGS= ±20V
30
VGS(TH)
VDS=VGS, ID=250 µA
VGS=10V, ID=6.9A
VGS=4.5V, ID=5.0A
1
RDS(ON)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=15V, VGS=0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=15V, VGS=10V, ID=6.9A
Gate Source Charge
QGS
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VGS=10V, VDS=15V, RL=2.2Ω,
RG =3Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source
IS
Diode Forward Current
Drain-Source Diode Forward Voltage
VSD
IS=1.0A
(Note)
Body Diode Reverse Recovery Time
trr
IF=6.9A, dIF/dt=100A/μs
Body Diode Reverse Recovery Charge
Qrr
Note: Pulse width ≤300μs, duty cycle≤2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
1
5
V
µA
µA
3
28
42
V
mΩ
mΩ
680
102
77
pF
pF
pF
13.84
1.82
3.2
4.6
4.1
20.6
5.2
nC
nC
nC
ns
ns
ns
ns
16.5
7.8
3
A
1
V
ns
nC
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QW-R502-350.D
UT4812Z
Power MOSFET
TYPICAL CHARACTERISTICS

Drain Current vs. Drain-Source
Breakdown Voltage
300
Drain Current vs. Gate Threshold Voltage
300
250
Drain Current, ID (µA)
Drain Current, ID (µA)
250
200
150
100
200
150
100
50
50
0
0
0
5 10 15 20 25 30 35 40
Drain-Source Breakdown Voltage, BVDSS(V)
Drain-Source On-State Resistance
Characteristics
8
7
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Gate Threshold Voltage, VTH (V)
Drain Current vs. Source to Drain Voltage
1.2
1.0
VGS=10V
ID=6.9A
6
0
0.8
5
0.6
4
VGS=4.5V
ID=5A
3
0.4
2
0.2
1
0
0
0
50
100
150
200
Drain to Source Voltage, VDS (mV)
0
0.4
0.6
0.8 1.0 1.2
0.2
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-350.D
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