la09b-3g1h.pdf

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
LED ARRAY
LA09B/3G1H
DATA SHEET
DOC. NO :
QW0905-LA09B/3G1H
REV.
:
B
DATE
:
12 - Jan - 2005
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 1/5
PART NO. LA09B/3G1H
Package Dimensions
G
3.5
G
3.1
G
H
5.0 7.0
5.0X3=15.0
22.0±0.5
6.0
8.0
12.5MIN
□0.5
TYP.
- +
1.0MIN
2.3TYP.
LG4120
LH4120
3.1 3.8
5.7
6.7
□1.5
MAX
12.5MIN
1.0MIN
2.3TYP.
Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 2/5
PART NO. LA09B/3G1H
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Symbol
Parameter
UNIT
G
H
Forward Current
IF
30
15
mA
Peak Forward Current
Duty 1/10@10KHz
IFP
120
60
mA
Power Dissipation
PD
100
40
mW
Reverse Current @5V
Ir
10
μA
Operating Temperature
Topr
-40 ~ +85
℃
Storage Temperature
Tstg
-40 ~ +100
℃
Soldering Temperature
Tsol
Max 260 ℃ for 5 sec Max
(2mm from body)
Typical Electrical & Optical Characteristics (Ta=25 ℃)
PART NO
COLOR
MATERIAL
Emitted
Forward
Peak Spectral
voltage
wave halfwidth
length △λ nm @ 20mA(V)
λPnm
Lens
Luminous
intensity
@10mA(mcd)
Min. Max. Min.
Typ.
Viewing
angle
2θ 1/2
(deg)
GaP
Green Green Diffused
565
30
1.7
2.6
3.0
5.0
116
GaP
Red
697
90
1.7
2.6
0.5
0.8
116
LA09B/3G1H
Red Diffused
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 3/5
PART NO. LA09B/3G1H
Typical Electro-Optical Characteristics Curve
G CHIP
Fig.2 Relative Intensity vs. Forward Current
Fig.1 Forward current vs. Forward Voltage
3.5
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
2.0
1.0
3.0
4.0
5.0
1.0
10
Fig.4 Relative Intensity vs. Temperature
1.2
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25 ℃
Fig.3 Forward Voltage vs. Temperature
1.1
1.0
0.9
0.8
-20
0
20
40
60
80
100
Relative Intensity@20mA
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
550
600
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature( ℃)
Ambient Temperature( ℃)
500
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
650
80
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 4/5
PART NO. LA09B/3G1H
Typical Electro-Optical Characteristics Curve
H CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
0.1
2.5
2.0
1.5
1.0
0.5
0.0
1.0
2.0
4.0
3.0
5.0
1.0
10
1.2
1.1
1.0
0.9
0.8
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
600
700
800
900
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature(℃)
Ambient Temperature(℃)
Relative Intensity@20mA
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25 ℃
Forward Voltage@20mA
Normalize @25℃
Fig.3 Forward Voltage vs. Temperature
-20
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
1000
80
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 5/5
PART NO. LA09B/3G1H
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=20mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resisance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5 ℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under ondition
of hogh temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5℃
2.RH=90 %~95 %
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hous.
1.Ta=105 ℃±5 ℃&-40 ℃±5℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
Thermal Shock Test
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11