UNISONIC TECHNOLOGIES CO.,LTD MJE13011 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED SWITCHING FEATURES * High voltage, high speed switching * High reliability 1 TO-3P *Pb-free plating product number: MJE13011L PIN CONFIGURATION PIN NO. 1 2 3 PIN NAME BASE COLLECTOR EMITTER ORDERING INFORMATION Order Number Normal Lead Free Plating MJE13011-T3P-T MJE13011L-T3P-T Package Packing TO-3P Tube www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co.,LTD 1 of 4 QW-R214-010,B MJE13011 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TC = 25℃) PARAMETER Collector Base Voltage SYMBOL VCBO VCEO VCEO(SUS) VEBO IC IB PD TJ TSTG Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature RATINGS 450 400 400 7 10 3 80 +150 -40 ~ +150 UNIT V V V V A A W ℃ ℃ ELECTRICAL SPECIFICATIONS (TC =25℃, Unless Otherwise Specified.) PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector-Emitter Saturation Voltage Base Emitter Saturation Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Switching Time SYMBOL VCBO VCEO VCEO (SUS) VEBO VCE (SAT) VBE (SAT) ICBO IEBO hFE tON tSTG tF TEST CONDITIONS ICBO=1mA ICEO=10mA IC=1A IEBO=0.1mA MIN 450 400 400 7 TYP IC=4A, IB=0.8A VCBO=450V VEBO=7V IC=4A, VCE=5V MAX 1.2 1.5 1.0 0.1 UNIT V V V V V V mA mA 1.0 2.0 1.0 µs µs µs 10 IC=7.5A, IB1=-IB2=1.5A RL=20Ω, Pw=20µs, Duty ≤ 2% CLASSIFICATION of hFE RANK RANGE A 10 ~ 16 B 15 ~ 21 C 20 ~ 26 D 25 ~ 31 E 30 ~ 36 F 35 ~ 40 THERMAL DATA PARAMETER Thermal Resistance Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJC RATINGS 1.55 UNIT ℃/W 2 of 4 QW-R214-010,B MJE13011 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING TIME TEST CIRCUIT RL=20Ω IB1 IB1 IB2 IC IB2 0.9IC IC 0.1IC PW=20μs tON UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw tSTG tF 3 of 4 QW-R214-010,B MJE13011 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS Collector Output Characteristics 14 A 9 00 m 70 0 mA 10 DC Current Gain, hFE Collector Current, IC (A) 300 200 T C=25℃ 12 5 00 mA 8 300mA 6 200mA 4 IB =100mA 2 0 DC Current Gain 0 2 4 6 8 10 12 VCE=5V 100 T C=120℃ 50 30 25℃ -20℃ -40℃ 10 5 3 1 0.03 0.05 0.1 14 0.3 0.5 Collector Current, IC (A) Saturation Voltage, VCE (SAT), VBE (SAT) (V) TC=25℃ 10 Single Pulse 0.5 0.3 VCE(SAT) 0.1 0.05 0.03 0.01 0.03 0.05 0.1 0.3 0.5 1 3 10 30 TC=25℃ IC=5IB VBE(SAT) 5 Safe Operating Area Base and Collector Saturation Voltage 1 3 Collector Current, I C (A) Collector Emitter Voltage, VCE (V) 3 1 5 10 50μs 5 3 100μs 200μs 1 500μs 0.5 0.3 PW=1ms 0.1 0.05 0.03 1 3 5 10 30 50 100 300 500 Collector Emitter Voltage, VCE (V) Collector Current, IC (A) Switching Time 3 T C=25℃ I C=5IB1 =5IB2 Switching Time (µs) t STG 1 tON 0.5 0.3 0.1 0.3 tF 0.5 1 3 5 10 Collector Current, IC (A) UTC assum es no responsibility for equipm ent failures that result from using products at values that exceed, ev en m om entarily, rated v alues (such as m axim um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R214-010,B