Data Sheet

DF
N
20
20
MD
-6
PMPB20XNEA
20 V, N-channel Trench MOSFET
22 February 2016
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
2. Features and benefits
•
•
•
•
•
Low threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
20
V
VGS
gate-source voltage
-12
-
12
V
ID
drain current
-
-
7.5
A
-
16
20
mΩ
VGS = 4.5 V; Tamb = 25 °C
[1]
Static characteristics
RDSon
drain-source on-state
resistance
[1]
VGS = 4.5 V; ID = 7.5 A; Tj = 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad
2
for drain 6 cm .
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PMPB20XNEA
NXP Semiconductors
20 V, N-channel Trench MOSFET
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
D
drain
2
D
drain
3
G
gate
4
S
source
5
D
drain
6
D
drain
7
D
drain
8
S
source
Simplified outline
1
Graphic symbol
D
6
7
2
3
8
5
G
4
Transparent top view
DFN2020MD-6 (SOT1220)
S
017aaa255
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
PMPB20XNEA
Description
Version
DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin
small outline package; no leads; 6 terminals
SOT1220
7. Marking
Table 4.
Marking codes
Type number
Marking code
PMPB20XNEA
3J
PMPB20XNEA
Product data sheet
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NXP Semiconductors
20 V, N-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
20
V
VGS
gate-source voltage
-12
12
V
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
[1]
-
7.5
A
VGS = 4.5 V; Tamb = 100 °C
[1]
-
4.8
A
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
-
30
A
EDS(AL)S
non-repetitive drain-source
avalanche energy
Tj(init) = 25 °C; ID = 1.3 A; DUT in
-
13
mJ
total power dissipation
Tamb = 25 °C
[2]
-
460
mW
[1]
-
1.65
W
-
12.5
W
Ptot
avalanche (unclamped)
Tsp = 25 °C
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
Source-drain diode
IS
source current
Tamb = 25 °C
[1]
-
1.65
A
HBM
[3]
-
2000
V
ESD maximum rating
VESD
electrostatic discharge voltage
[1]
[2]
[3]
PMPB20XNEA
Product data sheet
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad
2
for drain 6 cm .
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Measured between all pins.
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NXP Semiconductors
20 V, N-channel Trench MOSFET
017aaa123
120
Pder
(%)
Ider
(%)
80
80
40
40
0
- 75
Fig. 1.
017aaa124
120
- 25
25
75
125
Tj (°C)
0
- 75
175
Normalized total power dissipation as a
function of junction temperature
Fig. 2.
- 25
25
75
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
aaa-021670
102
ID
(A)
125
Limit RDSon = VDS/ID
tp = 10 µs
100 µs
10
1 ms
1
10 ms
DC; Tsp = 25 °C
100 ms
10-1
10-2
10-1
Fig. 3.
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
1
10
VDS (V)
102
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
PMPB20XNEA
Product data sheet
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20 V, N-channel Trench MOSFET
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
[2]
Min
Typ
Max
Unit
[1]
-
235
270
K/W
[2]
-
67
74
K/W
-
5
10
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm .
aaa-021671
103
Zth(j-a)
(K/W)
duty cycle = 1
0.5
102
0.25
0.75
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102
aaa-021672
duty cycle = 1
0.75
Zth(j-a)
(K/W)
0.50
0.33
0.20
0.25
0.10
10
0.05
0.02
0.01
0
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm
Fig. 5.
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMPB20XNEA
Product data sheet
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20 V, N-channel Trench MOSFET
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
20
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS=VGS; Tj = 25 °C
0.75
1
1.25
V
IDSS
drain leakage current
VDS = 20 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
IGSS
gate leakage current
VGS = 12 V; VDS = 0 V; Tj = 25 °C
-
-
10
µA
VGS = -12 V; VDS = 0 V; Tj = 25 °C
-
-
-10
µA
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
-
-
5
µA
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
-
-
-5
µA
VGS = 2.5 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = -2.5 V; VDS = 0 V; Tj = 25 °C
-
-
-100
nA
VGS = 4.5 V; ID = 7.5 A; Tj = 25 °C
-
16
20
mΩ
VGS = 4.5 V; ID = 7.5 A; Tj = 150 °C
-
24
30
mΩ
VGS = 2.5 V; ID = 6.1 A; Tj = 25 °C
-
24
30
mΩ
RDSon
drain-source on-state
resistance
gfs
forward
transconductance
VDS = 10 V; ID = 7.5 A; Tj = 25 °C
-
26.8
-
S
RG
gate resistance
f = 1 MHz
-
1
-
Ω
Dynamic characteristics
QG(tot)
total gate charge
VDS = 10 V; ID = 7.5 A; VGS = 4.5 V;
-
9.9
15
nC
QGS
gate-source charge
Tj = 25 °C
-
1.4
-
nC
QGD
gate-drain charge
-
3.1
-
nC
Ciss
input capacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;
-
930
-
pF
Coss
output capacitance
Tj = 25 °C
-
178
-
pF
Crss
reverse transfer
capacitance
-
144
-
pF
td(on)
turn-on delay time
VDS = 10 V; ID = 7.5 A; VGS = 4.5 V;
-
16
-
ns
tr
rise time
RG(ext) = 6 Ω; Tj = 25 °C
-
40
-
ns
td(off)
turn-off delay time
-
44
-
ns
tf
fall time
-
22
-
ns
-
0.7
1.2
V
Source-drain diode
VSD
source-drain voltage
PMPB20XNEA
Product data sheet
IS = 1.65 A; VGS = 0 V; Tj = 25 °C
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20 V, N-channel Trench MOSFET
aaa-021673
28
ID
4.5 V 2.5 V
(A)
24
aaa-021674
10-3
2.3 V
ID
(A)
20
10-4
min
16
typ
max
VGS = 2 V
12
10-5
8
1.8 V
4
0
Fig. 6.
0
1
2
3
VDS (V)
10-6
0.0
4
0.5
1.0
VGS (V)
1.5
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Output characteristics: drain current as a
Fig. 7.
function of drain-source voltage; typical values
Sub-threshold drain current as a function of
gate-source voltage
aaa-021675
50
RDSon
(mΩ)
RDSon
(mΩ)
2.2 V
VGS = 2 V
40
30
80
60
2.4 V
2.5 V
20
aaa-021676
100
40
3V
4.5 V
10
Tj = 150 °C
20
Tj = 25 °C
0
0
5
10
15
20
ID (A)
0
25
Tj = 25 °C
Fig. 8.
Product data sheet
4
8
VGS (V)
12
ID = 2.2 A
Drain-source on-state resistance as a function
of drain current; typical values
PMPB20XNEA
0
Fig. 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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NXP Semiconductors
20 V, N-channel Trench MOSFET
aaa-021677
25
aaa-021678
2.0
ID
(A)
a
20
1.5
15
1.0
10
0.5
5
0
Tj = 150 °C
0
Tj = 25 °C
1
2
0.0
-60
3
VGS (V)
VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
aaa-021679
2.0
0
60
120
Tj (°C)
180
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-021682
104
VGS(th)
(V)
C
(pF)
1.5
Ciss
103
1.0
max
Coss
typ
0.5
Crss
min
0
-60
0
60
120
Tj (°C)
102
10-1
180
ID = 0.25 mA; VDS = VGS
Product data sheet
10
VDS (V)
102
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
PMPB20XNEA
1
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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NXP Semiconductors
20 V, N-channel Trench MOSFET
aaa-021683
5
VDS
VGS
(V)
ID
4
VGS(pl)
3
VGS(th)
VGS
2
QGS1
1
0
QGS2
0
4
8
QG (nC)
QGS
QGD
QG(tot)
003aaa508
Fig. 15. MOSFET transistor: Gate charge waveform
definitions
12
ID = 7.53 A; VDS = 10 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-021684
4
IS
(A)
3
2
Tj = 150 °C
1
Tj = 25 °C
0
0
0.4
0.8
VSD (V)
1.2
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 17. Duty cycle definition
PMPB20XNEA
Product data sheet
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20 V, N-channel Trench MOSFET
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PMPB20XNEA
Product data sheet
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20 V, N-channel Trench MOSFET
12. Package outline
DFN2020MD-6: plastic thermal enhanced ultra thin small outline package; no leads;
6 terminals; body 2 x 2 x 0.65 mm
SOT1220
(8×)
pin 1
index area
B
E
A
X
D
A
A1
detail X
solderable lead
end protrusion
max. 0.02 mm (6×)
C
Lp
E2
J1
D2 3
4
2
5
e
J
bp (6×)
D1
e
1
v
E1
0
2 mm
scale
Dimensions (mm are the original dimensions)
Unit
A
A1
bp
min
0.25
nom
max 0.65 0.04 0.35
D
D1
D2
E
E1
E2
1.9
1.0
0.2
1.9
1.1
0.51
2.1
1.2
0.3
2.1
1.3
0.61
e
J
J1
0.65 0.27 0.64
Lp
0.2
0.3
v
y
y1
0.1
0.05
0.1
Note
1. Dimension A is including plating thickness.
Outline
version
A B
6
pin 1
index area
mm
y
y1 C
sot1220_po
References
IEC
JEDEC
JEITA
European
projection
Issue date
12-04-23
12-04-30
SOT1220
Fig. 18. Package outline DFN2020MD-6 (SOT1220)
PMPB20XNEA
Product data sheet
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20 V, N-channel Trench MOSFET
13. Soldering
Footprint information for reflow soldering of DFN2020MD-6 package
0.33 (6×)
SOT1220
0.76
0.43 (6×)
0.66
0.53 (6×)
0.56
0.25 0.35 0.45
0.775
0.65
2.06
0.285
1.25
1.35
0.35 (6×)
1.05
0.25 (6×)
0.65
0.45 (6×)
0.9
1.1
1.2
0.935
0.935
2.5
solder land
solder land plus solder paste
solder paste deposit
solder resist
occupied area
Dimensions in mm
sot1220_fr
Fig. 19. Reflow soldering footprint for DFN2020MD-6 (SOT1220)
PMPB20XNEA
Product data sheet
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20 V, N-channel Trench MOSFET
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMPB20XNEA v.1
20160222
Product data sheet
-
-
PMPB20XNEA
Product data sheet
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20 V, N-channel Trench MOSFET
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or replacement of any products or rework charges) whether or not such
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
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is deemed to offer functions and qualities beyond those described in the
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PMPB20XNEA
Product data sheet
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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20 V, N-channel Trench MOSFET
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authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PMPB20XNEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 February 2016
© NXP Semiconductors N.V. 2016. All rights reserved
15 / 16
PMPB20XNEA
NXP Semiconductors
20 V, N-channel Trench MOSFET
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................5
10
Characteristics ....................................................... 6
11
11.1
Test information ..................................................... 9
Quality information ............................................. 10
12
Package outline ................................................... 11
13
Soldering .............................................................. 12
14
Revision history ................................................... 13
15
15.1
15.2
15.3
15.4
Legal information .................................................14
Data sheet status ............................................... 14
Definitions ...........................................................14
Disclaimers .........................................................14
Trademarks ........................................................ 15
© NXP Semiconductors N.V. 2016. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesa[email protected]
Date of release: 22 February 2016
PMPB20XNEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 February 2016
© NXP Semiconductors N.V. 2016. All rights reserved
16 / 16